Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte.
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- Semiconductors, 2018, v. 52, n. 3, p. 394, doi. 10.1134/S1063782618030053
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- Article
Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 3
Results: 22
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Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules.
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- Semiconductors, 2018, v. 52, n. 3, p. 371, doi. 10.1134/S1063782618030041
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- Article
3
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.
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- Semiconductors, 2018, v. 52, n. 3, p. 366, doi. 10.1134/S1063782618030120
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- Article
4
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands.
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- Semiconductors, 2018, v. 52, n. 3, p. 390, doi. 10.1134/S1063782618030107
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- Article
5
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
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- Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
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- Article
6
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films.
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- Semiconductors, 2018, v. 52, n. 3, p. 352, doi. 10.1134/S106378261803020X
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- Article
7
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities.
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- Semiconductors, 2018, v. 52, n. 3, p. 359, doi. 10.1134/S1063782618030168
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- Article
8
Formation of Cu<sub>2</sub>O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization.
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- Semiconductors, 2018, v. 52, n. 3, p. 383, doi. 10.1134/S1063782618030028
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- Article
9
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface.
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- Semiconductors, 2018, v. 52, n. 3, p. 324, doi. 10.1134/S1063782618030156
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- Article
10
Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In<sub>2</sub>O<sub>3</sub> Films.
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- Semiconductors, 2018, v. 52, n. 3, p. 320, doi. 10.1134/S1063782618030223
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- Article
11
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon.
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- Semiconductors, 2018, v. 52, n. 3, p. 331, doi. 10.1134/S1063782618030077
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- Article
12
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I-V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model.
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- Semiconductors, 2018, v. 52, n. 3, p. 348, doi. 10.1134/S106378261803003X
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- Article
13
Mechanism of the Generation of Donor-Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity.
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- Semiconductors, 2018, v. 52, n. 3, p. 294, doi. 10.1134/S1063782618030193
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14
Optimal Doping of Diode Current Interrupters.
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- Semiconductors, 2018, v. 52, n. 3, p. 341, doi. 10.1134/S1063782618030144
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- Article
15
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals.
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- Semiconductors, 2018, v. 52, n. 3, p. 278, doi. 10.1134/S106378261803017X
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- Article
16
Electron-Electron and Electron-Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations.
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- Semiconductors, 2018, v. 52, n. 3, p. 335, doi. 10.1134/S1063782618030090
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- Article
17
Electrical Breakdown in Pure n- and p-Si.
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- Semiconductors, 2018, v. 52, n. 3, p. 273, doi. 10.1134/S1063782618030065
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18
Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles.
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- Semiconductors, 2018, v. 52, n. 3, p. 316, doi. 10.1134/S1063782618030235
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- Article
19
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers.
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- Semiconductors, 2018, v. 52, n. 3, p. 310, doi. 10.1134/S1063782618030132
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20
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals.
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- Semiconductors, 2018, v. 52, n. 3, p. 305, doi. 10.1134/S1063782618030181
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- Article
21
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands.
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- Semiconductors, 2018, v. 52, n. 3, p. 287, doi. 10.1134/S1063782618030211
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22
Electronic Structure of Four-Element Clathrates of the Ba-Zn-Si-Ge System.
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- Semiconductors, 2018, v. 52, n. 3, p. 282, doi. 10.1134/S1063782618030089
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- Article