Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 2
Results: 23
Conductivity of GaO-GaAs Heterojunctions.
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- Semiconductors, 2018, v. 52, n. 2, p. 143, doi. 10.1134/S1063782618020045
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Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime.
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- Semiconductors, 2018, v. 52, n. 2, p. 150, doi. 10.1134/S1063782618020100
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Dielectric Properties and Conductivity of Ag-Doped TlGaS Single Crystals.
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- Semiconductors, 2018, v. 52, n. 2, p. 156, doi. 10.1134/S1063782618020094
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Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures.
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- Semiconductors, 2018, v. 52, n. 2, p. 160, doi. 10.1134/S1063782618020057
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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p- i- n Structures on the Relaxation time of Nonequilibrium Carriers.
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- Semiconductors, 2018, v. 52, n. 2, p. 165, doi. 10.1134/S1063782618020173
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Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range.
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- Semiconductors, 2018, v. 52, n. 2, p. 172, doi. 10.1134/S1063782618020227
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Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films.
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- Semiconductors, 2018, v. 52, n. 2, p. 177, doi. 10.1134/S1063782618020021
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Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition.
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- Semiconductors, 2018, v. 52, n. 2, p. 184, doi. 10.1134/S1063782618020070
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Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping.
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- Semiconductors, 2018, v. 52, n. 2, p. 189, doi. 10.1134/S106378261802015X
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Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 2, p. 195, doi. 10.1134/S1063782618020112
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Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm).
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- Semiconductors, 2018, v. 52, n. 2, p. 209, doi. 10.1134/S1063782618020148
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Microstructure and Raman Scattering of CuZnSnSe Thin Films Deposited onto Flexible Metal Substrates.
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- Semiconductors, 2018, v. 52, n. 2, p. 215, doi. 10.1134/S1063782618020197
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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlGaN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 2, p. 221, doi. 10.1134/S1063782618020136
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On the Extended Holstein-Hubbard Model for Epitaxial Graphene on Metal.
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- Semiconductors, 2018, v. 52, n. 2, p. 226, doi. 10.1134/S1063782618020033
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Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors.
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- Semiconductors, 2018, v. 52, n. 2, p. 231, doi. 10.1134/S1063782618020082
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Graphite/ p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC.
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- Semiconductors, 2018, v. 52, n. 2, p. 236, doi. 10.1134/S1063782618020185
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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures.
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- Semiconductors, 2018, v. 52, n. 2, p. 242, doi. 10.1134/S1063782618020203
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Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers.
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- Semiconductors, 2018, v. 52, n. 2, p. 248, doi. 10.1134/S1063782618020240
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Electrical Activity of Extended Defects in Multicrystalline Silicon.
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- Semiconductors, 2018, v. 52, n. 2, p. 254, doi. 10.1134/S1063782618020124
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Luminescence Properties of CdZnO Thin Films.
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- Semiconductors, 2018, v. 52, n. 2, p. 260, doi. 10.1134/S1063782618020069
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Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics.
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- Semiconductors, 2018, v. 52, n. 2, p. 264, doi. 10.1134/S1063782618020161
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Ion-Beam Synthesis of the Crystalline Ge Phase in SiON Films upon Annealing under High Pressure.
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- Semiconductors, 2018, v. 52, n. 2, p. 268, doi. 10.1134/S1063782618020215
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Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons.
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- Semiconductors, 2018, v. 52, n. 2, p. 137, doi. 10.1134/S1063782618020239
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