Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.
- Published in:
- 2018
- By:
- Publication type:
- Correction Notice
Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 15
Results: 16
1
2
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy.
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- Semiconductors, 2018, v. 52, n. 15, p. 1982, doi. 10.1134/S1063782618150162
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- Publication type:
- Article
3
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests.
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- Semiconductors, 2018, v. 52, n. 15, p. 1976, doi. 10.1134/S1063782618150125
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- Article
4
A Physical Model of an SOI Field-Effect Hall Sensor.
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- Semiconductors, 2018, v. 52, n. 15, p. 1973, doi. 10.1134/S106378261815006X
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- Publication type:
- Article
5
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures.
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- Semiconductors, 2018, v. 52, n. 15, p. 1969, doi. 10.1134/S1063782618150046
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- Publication type:
- Article
6
Characteristics of Amorphous As<sub>2</sub>S<sub>3</sub> Semiconductor Films Obtained via Spin Coating.
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- Semiconductors, 2018, v. 52, n. 15, p. 1963, doi. 10.1134/S1063782618150058
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- Publication type:
- Article
7
Using Combined Optical Techniques to Control the Shallow Etching Process.
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- Semiconductors, 2018, v. 52, n. 15, p. 1958, doi. 10.1134/S1063782618150150
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- Publication type:
- Article
8
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition.
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- Semiconductors, 2018, v. 52, n. 15, p. 1953, doi. 10.1134/S1063782618150095
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- Publication type:
- Article
9
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers.
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- Semiconductors, 2018, v. 52, n. 15, p. 1947, doi. 10.1134/S1063782618150113
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- Publication type:
- Article
10
Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon-Phonon Coupling.
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- Semiconductors, 2018, v. 52, n. 15, p. 1942, doi. 10.1134/S1063782618150034
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- Publication type:
- Article
11
Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube-Nickel Oxide Composite Electrode Material.
- Published in:
- Semiconductors, 2018, v. 52, n. 15, p. 1936, doi. 10.1134/S1063782618150022
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- Publication type:
- Article
12
Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means.
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- Semiconductors, 2018, v. 52, n. 15, p. 1931, doi. 10.1134/S1063782618150137
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- Publication type:
- Article
13
Quantum Efficiency of Gallium Nitride-Based Heterostructures with GaInN Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 15, p. 1925, doi. 10.1134/S1063782618150149
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- Publication type:
- Article
14
Predicting the Optical Properties of Matrix Composites Containing Spherical Inclusions with Metal Shells.
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- Semiconductors, 2018, v. 52, n. 15, p. 1919, doi. 10.1134/S1063782618150071
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- Publication type:
- Article
15
Electron Transport by a Transverse Acoustoelectric Stoneley Wave.
- Published in:
- Semiconductors, 2018, v. 52, n. 15, p. 1915, doi. 10.1134/S1063782618150083
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- Publication type:
- Article
16
Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current.
- Published in:
- Semiconductors, 2018, v. 52, n. 15, p. 1909, doi. 10.1134/S1063782618150101
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- Publication type:
- Article