Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 14


Results: 31
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    Diode Lasers with Near-Surface Active Region.

    Published in:
    Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233
    By:
    • Payusov, A. S.;
    • Gordeev, N. Yu.;
    • Serin, A. A.;
    • Kulagina, M. M.;
    • Kalyuzhnyy, N. A.;
    • Mintairov, S. A.;
    • Maximov, M. V.;
    • Zhukov, A. E.
    Publication type:
    Article
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    Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks.

    Published in:
    Semiconductors, 2018, v. 52, n. 14, p. 1894, doi. 10.1134/S1063782618140166
    By:
    • Lebedev, D. V.;
    • Vlasov, A. S.;
    • Kulagina, M. M.;
    • Troshkov, S. I.;
    • Guseva, Yu. A.;
    • Pelucchi, E.;
    • Gocalinska, A.;
    • Juska, G.;
    • Romanova, A. Yu.;
    • Buriak, P. A.;
    • Smirnov, V. I.;
    • Shelaev, A. V.;
    • Bykov, V. A.;
    • Mintairov, A. M.
    Publication type:
    Article
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    High Quality Graphene Grown by Sublimation on 4H-SiC (0001).

    Published in:
    Semiconductors, 2018, v. 52, n. 14, p. 1882, doi. 10.1134/S1063782618140154
    By:
    • Lebedev, A. A.;
    • Davydov, V. Yu.;
    • Usachov, D. Yu.;
    • Lebedev, S. P.;
    • Smirnov, A. N.;
    • Eliseyev, I. A.;
    • Dunaevskiy, M. S.;
    • Gushchina, E. V.;
    • Bokai, K. A.;
    • Pezoldt, J.
    Publication type:
    Article
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    Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.

    Published in:
    Semiconductors, 2018, v. 52, n. 14, p. 1843, doi. 10.1134/S1063782618140257
    By:
    • Sakharov, A. V.;
    • Lundin, W. V.;
    • Zavarin, E. E.;
    • Zakheim, D. A.;
    • Usov, S. O.;
    • Tsatsulnikov, A. F.;
    • Yagovkina, M. A.;
    • Sim, P. E.;
    • Demchenko, O. I.;
    • Kurbanova, N. Y.;
    • Velikovskiy, L. E.
    Publication type:
    Article
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