Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 14
Results: 31
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers.
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- Semiconductors, 2018, v. 52, n. 14, p. 1905, doi. 10.1134/S1063782618140336
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Diode Lasers with Near-Surface Active Region.
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- Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233
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Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure.
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- Semiconductors, 2018, v. 52, n. 14, p. 1898, doi. 10.1134/S1063782618140178
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Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks.
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- Semiconductors, 2018, v. 52, n. 14, p. 1894, doi. 10.1134/S1063782618140166
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Absorption in Finite-Length Chevron-Type Graphene Nanoribbons.
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- Semiconductors, 2018, v. 52, n. 14, p. 1890, doi. 10.1134/S1063782618140269
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Model of Metamaterial Based on Graphene Scrolls and Carbon Nanotubes with Negative Refractive Index.
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- Semiconductors, 2018, v. 52, n. 14, p. 1886, doi. 10.1134/S1063782618140294
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High Quality Graphene Grown by Sublimation on 4H-SiC (0001).
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- Semiconductors, 2018, v. 52, n. 14, p. 1882, doi. 10.1134/S1063782618140154
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Increasing Spin-Orbital Coupling at Relativistic Exchange Interaction of Electron-Hole Pairs in Graphene.
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- Semiconductors, 2018, v. 52, n. 14, p. 1879, doi. 10.1134/S1063782618140129
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Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices.
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- Semiconductors, 2018, v. 52, n. 14, p. 1875, doi. 10.1134/S1063782618140312
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Spin Injection and Accumulation in the Planar NiFe-InSb-NiFe and NiFe-Cu-NiFe Spin Valves.
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- Semiconductors, 2018, v. 52, n. 14, p. 1871, doi. 10.1134/S1063782618140221
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On Derivation of Dresselhaus Spin-Splitting Hamiltonians in One-Dimensional Electron Systems.
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- Semiconductors, 2018, v. 52, n. 14, p. 1868, doi. 10.1134/S1063782618140142
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Weak Magnetic Field Resonance Effects in Diamond with Nitrogen-Vacancy Centers.
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- Semiconductors, 2018, v. 52, n. 14, p. 1865, doi. 10.1134/S1063782618140105
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Spontaneous Emission Amplification in Silver—Organic Periodic Structures and Tamm Plasmon Structures.
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- Semiconductors, 2018, v. 52, n. 14, p. 1861, doi. 10.1134/S1063782618140191
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Transverse Magneto-Optical Kerr Effect in Magnetite Covered by Array of Gold Nanostripes.
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- Semiconductors, 2018, v. 52, n. 14, p. 1857, doi. 10.1134/S1063782618140099
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Spectral-Kinetic Properties of Nanosized Nickel Phthalocyanine Films on Silver Nanoparticle Monolayers.
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- Semiconductors, 2018, v. 52, n. 14, p. 1853, doi. 10.1134/S1063782618140063
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Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy.
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- Semiconductors, 2018, v. 52, n. 14, p. 1849, doi. 10.1134/S106378261814004X
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Luminescent Methane Sensor Based on Energy Transfer from ZnS:Mn<sup>2+</sup> Quantum Dots to Analyte Molecule.
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- Semiconductors, 2018, v. 52, n. 14, p. 1846, doi. 10.1134/S1063782618140270
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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.
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- Semiconductors, 2018, v. 52, n. 14, p. 1843, doi. 10.1134/S1063782618140257
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Photoacoustic Generation with Surface Noble Metal Nanostructures.
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- Semiconductors, 2018, v. 52, n. 14, p. 1839, doi. 10.1134/S106378261814018X
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CNT-Based Label-Free Electrochemical Sensing of Native DNA with Allele Single Nucleotide Polymorphism.
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- Semiconductors, 2018, v. 52, n. 14, p. 1836, doi. 10.1134/S1063782618140117
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Electromechanical Switch Based on In<sub>x</sub>Ga<sub>1 -</sub><sub>x</sub>As Nanowires.
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- Semiconductors, 2018, v. 52, n. 14, p. 1833, doi. 10.1134/S1063782618140026
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Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities.
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- Semiconductors, 2018, v. 52, n. 14, p. 1827, doi. 10.1134/S1063782618140087
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Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix.
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- Semiconductors, 2018, v. 52, n. 14, p. 1822, doi. 10.1134/S1063782618140245
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The Oscillations in ESR Spectra of Mn<sub>0.11</sub>Hg<sub>0.89</sub>Te in X- and Q-Bands.
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- Semiconductors, 2018, v. 52, n. 14, p. 1817, doi. 10.1134/S1063782618140282
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Terahertz Optoelectronics of Quantum Rings and Nanohelices.
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- Semiconductors, 2018, v. 52, n. 14, p. 1813, doi. 10.1134/S1063782618140075
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Effect of the Conductive Channel Cut-Off on Operation of n<sup>+</sup>-n-n<sup>+</sup> GaN NW-Based Gunn Diode.
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- Semiconductors, 2018, v. 52, n. 14, p. 1809, doi. 10.1134/S106378261814021X
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Quantum Rings Dressed by a High-Frequency Electromagnetic Field.
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- Semiconductors, 2018, v. 52, n. 14, p. 1806, doi. 10.1134/S1063782618140130
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Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation.
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- Semiconductors, 2018, v. 52, n. 14, p. 1801, doi. 10.1134/S1063782618140208
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Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets.
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- Semiconductors, 2018, v. 52, n. 14, p. 1798, doi. 10.1134/S1063782618140300
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Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions.
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- Semiconductors, 2018, v. 52, n. 14, p. 1795, doi. 10.1134/S1063782618140051
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Classification of Energy States of the Exciton in Square Quantum Well.
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- Semiconductors, 2018, v. 52, n. 14, p. 1791, doi. 10.1134/S1063782618140038
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