Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 13

Results: 23

New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1782, doi. 10.1134/S1063782618130134
By:
- Nikitin, S. E.;
- Bobyl, A. V.;
- Avezova, N. R.;
- Terukov, E. I.
Publication type:
Article
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1775, doi. 10.1134/S1063782618130092
By:
- Kudryashov, D. A.;
- Gudovskikh, A. S.;
- Baranov, A. I.
Publication type:
Article
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1770, doi. 10.1134/S1063782618130158
By:
- Semenov, A. N.;
- Nechaev, D. V.;
- Troshkov, S. I.;
- Nashchekin, A. V.;
- Brunkov, P. N.;
- Jmerik, V. N.;
- Ivanov, S. V.
Publication type:
Article
Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1763, doi. 10.1134/S1063782618130146
By:
- Sadovnikov, S. I.;
- Vovkotrub, E. G.
Publication type:
Article
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1758, doi. 10.1134/S1063782618130171
By:
- Strel'chuk, A. M.;
- Kozlovski, V. V.;
- Lebedev, A. A.
Publication type:
Article
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1754, doi. 10.1134/S1063782618130080
By:
- Khvostikov, V. P.;
- Kalinovskiy, V. S.;
- Sorokina, S. V.;
- Shvarts, M. Z.;
- Potapovich, N. S.;
- Khvostikova, O. A.;
- Vlasov, A. S.;
- Andreev, V. M.
Publication type:
Article
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm).
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1748, doi. 10.1134/S1063782618130079
By:
- Khvostikov, V. P.;
- Sorokina, S. V.;
- Potapovich, N. S.;
- Levin, R. V.;
- Marichev, A. E.;
- Timoshina, N. Kh.;
- Pushnyi, B. V.
Publication type:
Article
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1743, doi. 10.1134/S1063782618130110
By:
- Kulikov, V. B.;
- Maslov, D. V.;
- Sabirov, A. R.;
- Solodkov, A. A.;
- Dudin, A. L.;
- Katsavets, N. I.;
- Kogan, I. V.;
- Shukov, I. V.;
- Chaly, V. P.
Publication type:
Article
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1738, doi. 10.1134/S1063782618130183
By:
- Tyaginov, S. E.;
- Makarov, A. A.;
- Kaczer, B.;
- Jech, M.;
- Chasin, A.;
- Grill, A.;
- Hellings, G.;
- Vexler, M. I.;
- Linten, D.;
- Grasser, T.
Publication type:
Article
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1732, doi. 10.1134/S1063782618130031
By:
- Aleksandrov, O. V.;
- Ageev, A. N.;
- Zolotarev, S. I.
Publication type:
Article
Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1721, doi. 10.1134/S1063782618130122
By:
- Li, G. V.;
- Astrova, E. V.;
- Lihachev, A. I.
Publication type:
Article
Ab Initio Study of the ZnSnSb2 Semiconductor.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1715, doi. 10.1134/S1063782618130043
By:
- Basalaev, Yu. M.
Publication type:
Article
Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1708, doi. 10.1134/S1063782618130237
By:
- Zakharova, I. B.;
- Elistratova, M. A.;
- Romanov, N. M.;
- Kvyatkovskii, O. E.
Publication type:
Article
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213
By:
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1696, doi. 10.1134/S1063782618130055
By:
- Feklistov, K. V.;
- Cherkov, A. G.;
- Popov, V. P.;
- Fedina, L. I.
Publication type:
Article
Optical Studies of Heat Transfer in PbTe:Bi(Sb) Thin Films.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1691, doi. 10.1134/S1063782618130067
By:
- Ivakin, E. V.;
- Kisialiou, I. G.;
- Nykyruy, L. I.;
- Yavorskyy, Y. S.
Publication type:
Article
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1686, doi. 10.1134/S1063782618130201
By:
- Ushakov, V. V.;
- Aminev, D. F.;
- Krivobok, V. S.
Publication type:
Article
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1677, doi. 10.1134/S1063782618130249
By:
- Emtsev, V. V.;
- Abrosimov, N. V.;
- Kozlovski, V. V.;
- Poloskin, D. S.;
- Oganesyan, G. A.
Publication type:
Article
Conduction-Electron Spin Resonance in HgSe Crystals.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1672, doi. 10.1134/S1063782618130225
By:
- Veinger, A. I.;
- Kochman, I. V.;
- Okulov, V. I.;
- Andriichuk, M. D.;
- Paranchich, L. D.
Publication type:
Article
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1669, doi. 10.1134/S1063782618130195
By:
- Usanov, D. A.;
- Postelga, A. E.;
- Kalyamin, A. A.;
- Sharov, I. V.
Publication type:
Article
Features of the Electron Mobility in the n-InSe Layered Semiconductor.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1662, doi. 10.1134/S106378261813002X
By:
- Abdinov, A. Sh.;
- Babayeva, R. F.
Publication type:
Article
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 - xN/Si(111) Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1653, doi. 10.1134/S106378261813016X
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Kondrashin, M. A.;
- Lenshin, A. S.;
- Khudyakov, Yu. Yu.;
- Mizerov, A. M.;
- Arsentyev, I. N.;
- Beltiukov, A. N.;
- Leiste, Harald;
- Rinke, Monika
Publication type:
Article
McCurdy's Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1643, doi. 10.1134/S1063782618130109
By:
- Kuleyev, I. G.;
- Kuleyev, I. I.;
- Bakharev, S. M.
Publication type:
Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 13

New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters.

Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices.

Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations.

Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles.

Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles.

AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation.

GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm).

nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm.

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.

Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection.

Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode.

Ab Initio Study of the ZnSnSb<sub>2</sub> Semiconductor.

Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations.

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO<sub>2</sub> Surface Films.

Optical Studies of Heat Transfer in PbTe:Bi(Sb) Thin Films.

Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride.

Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge.

Conduction-Electron Spin Resonance in HgSe Crystals.

Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method.

Features of the Electron Mobility in the n-InSe Layered Semiconductor.

Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In<sub>x</sub>Ga<sub>1 - x</sub>N/Si(111) Heterostructures.

McCurdy's Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow.