Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 12

Results: 25

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1635, doi. 10.1134/S1063782618120138

By:

Kozlovski, V. V.;
Lebedev, A. A.;
Davydovskaya, K. S.;
Lyubimova, Yu. V.

Publication type:

Article

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163

By:

Maremyanin, K. V.;
Ikonnikov, A. V.;
Bovkun, L. S.;
Rumyantsev, V. V.;
Chizhevskii, E. G.;
Zasavitskii, I. I.;
Gavrilenko, V. I.

Publication type:

Article

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1586, doi. 10.1134/S1063782618120230

By:

Spirin, K. E.;
Gaponova, D. M.;
Marem’yanin, K. V.;
Rumyantsev, V. V.;
Gavrilenko, V. I.;
Mikhailov, N. N.;
Dvoretsky, S. A.

Publication type:

Article

All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1595, doi. 10.1134/S1063782618120217

By:

Shashkin, I. S.;
Soboleva, O. S.;
Gavrina, P. S.;
Zolotarev, V. V.;
Slipchenko, S. O.;
Pikhtin, N. A.

Publication type:

Article

Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+-n0-n+ Diodes.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1630, doi. 10.1134/S1063782618120126

By:

Ivanov, P. A.;
Samsonova, T. P.;
Potapov, A. S.

Publication type:

Article

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1638, doi. 10.1134/S1063782618120114

By:

Ilin, A. S.;
Matsukatova, A. N.;
Forsh, P. A.;
Vygranenko, Yu.

Publication type:

Article

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1621, doi. 10.1134/S1063782618120059

By:

Asryan, L. V.;
Zubov, F. I.;
BalezinaPolubavkina, Yu. S.;
Moiseev, E. I.;
Muretova, M. E.;
Kryzhanovskaya, N. V.;
Maximov, M. V.;
Zhukov, A. E.

Publication type:

Article

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1616, doi. 10.1134/S1063782618120023

By:

Agrinskaya, N. V.;
Lebedev, A. A.;
Lebedev, S. P.;
Shakhov, M. A.;
Lahderanta, E.

Publication type:

Article

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1611, doi. 10.1134/S1063782618120047

By:

Alekseev, P. A.;
Dunaevskiy, M. S.;
Mikhailov, A. O.;
Lebedev, S. P.;
Lebedev, A. A.;
Ilkiv, I. V.;
Khrebtov, A. I.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1607, doi. 10.1134/S1063782618120084

By:

Fefelov, S. A.;
Kazakova, L. P.;
Bogoslovskiy, N. A.;
Tsendin, K. D.

Publication type:

Article

Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1581, doi. 10.1134/S1063782618120199

By:

Sablikov, V. A.;
Tkach, Yu. Ya.

Publication type:

Article

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1603, doi. 10.1134/S106378261812014X

By:

Mamutin, V. V.;
Ilyinskaya, N. D.;
Usikova, A. A.;
Lyutetskiy, A. V.

Publication type:

Article

On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1573, doi. 10.1134/S1063782618120254

By:

Tsyplenkov, V. V.;
Shastin, V. N.

Publication type:

Article

Solar Cell Based on Core/Shell Nanowires.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229

By:

Sibirev, N. V.;
Kotlyar, K. P.;
Koryakin, A. A.;
Shtrom, I. V.;
Ubiivovk, E. V.;
Soshnikov, I. P.;
Reznik, R. R.;
Bouravleuv, A. D.;
Cirlin, G. E.

Publication type:

Article

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205

By:

Samartsev, I. V.;
Nekorkin, S. M.;
Zvonkov, B. N.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Pashenkin, I. J.;
Dikareva, N. V.;
Chigineva, A. B.

Publication type:

Article

Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1559, doi. 10.1134/S1063782618120072

By:

Erofeeva, I. V.;
Dorokhin, M. V.;
Zdoroveyshchev, A. V.;
Kuznetsov, Yu. M.;
Popov, A. A.;
Lantsev, E. A.;
Boryakov, A. V.;
Kotomina, V. E.

Publication type:

Article

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1551, doi. 10.1134/S1063782618120102

By:

Gudina, S. V.;
Arapov, Yu. G.;
Ilchenko, E. I.;
Neverov, V. N.;
Savelyev, A. P.;
Podgornykh, S. M.;
Shelushinina, N. G.;
Yakunin, M. V.;
Vasil’evskii, I. S.;
Vinichenko, A. N.

Publication type:

Article

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060

By:

Baidus, N. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Krasilnik, Z. F.;
Kudryavtsev, K. E.;
Nekorkin, S. M.;
Novikov, A. V.;
Rykov, A. V.;
Reunov, D. G.;
Shaleev, M. V.;
Yunin, P. A.;
Yurasov, D. V.

Publication type:

Article

Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1540, doi. 10.1134/S1063782618120242

By:

Tikhov, S. V.;
Gorshkov, O. N.;
Antonov, I. N.;
Tetelbaum, D. I.;
Mikhaylov, A. N.;
Belov, A. I.;
Morozov, A. I.;
Karakolis, P.;
Dimitrakis, P.

Publication type:

Article

Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1534, doi. 10.1134/S1063782618120187

By:

Polischuk, O. V.;
Fateev, D. V.;
Popov, V. V.

Publication type:

Article

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175

By:

Mizerov, A. M.;
Timoshnev, S. N.;
Sobolev, M. S.;
Nikitina, E. V.;
Shubina, K. Yu.;
Berezovskaia, T. N.;
Shtrom, I. V.;
Bouravleuv, A. D.

Publication type:

Article

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1525, doi. 10.1134/S1063782618120096

By:

Gorshkov, A. P.;
Volkova, N. S.;
Pavlov, D. A.;
Usov, Yu. V.;
Istomin, L. A.;
Levichev, S. B.

Publication type:

Article

Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1518, doi. 10.1134/S1063782618120266

By:

Venediktov, M. M.;
Tarasova, E. A.;
Bozhen’kina, A. D.;
Obolensky, S. V.;
Elesin, V. V.;
Chukov, G. V.;
Metelkin, I. O.;
Krevskiy, M. A.;
Dukov, D. I.;
Fefelov, A. G.

Publication type:

Article

Formation of a Graphene-Like SiN Layer on the Surface Si(111).

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151

By:

Mansurov, V. G.;
Galitsyn, Yu. G.;
Malin, T. V.;
Teys, S. A.;
Fedosenko, E. V.;
Kozhukhov, A. S.;
Zhuravlev, K. S.;
Cora, Ildikó;
Pécz, Béla

Publication type:

Article

Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1505, doi. 10.1134/S1063782618120035

By:

Akimov, A. N.;
Klimov, A. E.;
Epov, V. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 12

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.

All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.

Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p<sup>+</sup>-n<sub>0</sub>-n<sup>+</sup> Diodes.

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation.

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface.

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates.

Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe.

Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field.

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.

On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.

Solar Cell Based on Core/Shell Nanowires.

Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.

Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering.

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.

Behavioral Features of MIS Memristors with a Si<sub>3</sub>N<sub>4</sub> Nanolayer Fabricated on a Conductive Si Substrate.

Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy.

Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.

Formation of a Graphene-Like SiN Layer on the Surface Si(111).

Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.