Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 11

Results: 26

Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1500, doi. 10.1134/S1063782618110040
By:
- Bekin, N. A.
Publication type:
Article
Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1495, doi. 10.1134/S1063782618110143
By:
- Kudryatvsev, K. E.;
- Dubinov, A. A.;
- Aleshkin, V. Ya.;
- Yurasov, D. V.;
- Gorlachuk, P. V.;
- Ryaboshtan, Yu. L.;
- Marmalyuk, A. A.;
- Novikov, A. V.;
- Krasilnik, Z. F.
Publication type:
Article
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1491, doi. 10.1134/S1063782618110088
By:
- Drozdov, Yu. N.;
- Khrikin, O. I.;
- Yunin, P. A.
Publication type:
Article
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1484, doi. 10.1134/S1063782618110039
By:
- Abramkin, D. S.;
- Petrushkov, M. O.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Shamirzaev, T. S.
Publication type:
Article
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1477, doi. 10.1134/S106378261811012X
By:
- Khananova, A. V.;
- Obolensky, S. V.
Publication type:
Article
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1473, doi. 10.1134/S1063782618110180
By:
- Okhapkin, A. I.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Kraev, S. A.;
- Skorokhodov, E. V.;
- Shashkin, V. I.
Publication type:
Article
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1468, doi. 10.1134/S1063782618110076
By:
- Dobretsova, A. A.;
- Kvon, Z. D.;
- Braginskii, L. S.;
- Entin, M. V.;
- Mikhailov, N. N.
Publication type:
Article
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283
By:
- Zhukov, A. E.;
- Gordeev, N. Yu.;
- Shernyakov, Yu. M.;
- Payusov, A. S.;
- Serin, A. A.;
- Kulagina, M. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.
Publication type:
Article
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1457, doi. 10.1134/S1063782618110222
By:
- Rudin, S. A.;
- Smagina, Zh. V.;
- Zinovyev, V. A.;
- Novikov, P. L.;
- Nenashev, A. V.;
- Rodyakina, E. E.;
- Dvurechenskii, A. V.
Publication type:
Article
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1448, doi. 10.1134/S1063782618110192
By:
- Pavelyev, D. G.;
- Vasilev, A. P.;
- Kozlov, V. A.;
- Obolenskaya, E. S.
Publication type:
Article
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1442, doi. 10.1134/S1063782618110167
By:
- Novikov, A. V.;
- Yurasov, D. V.;
- Morozova, E. E.;
- Skorohodov, E. V.;
- Verbus, V. A.;
- Yablonskiy, A. N.;
- Baidakova, N. A.;
- Gusev, N. S.;
- Kudryavtsev, K. E.;
- Nezhdanov, A. V.;
- Mashin, A. I.
Publication type:
Article
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1437, doi. 10.1134/S1063782618110064
By:
- Derebezov, I. A.;
- Gaisler, V. A.;
- Gaisler, A. V.;
- Dmitriev, D. V.;
- Toropov, A. I.;
- von Helversen, M.;
- de la Haye, C.;
- Bounouar, S.;
- Reitzenstein, S.
Publication type:
Article
Study of the Structural and Morphological Properties of HPHT Diamond Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1432, doi. 10.1134/S1063782618110271
By:
- Yunin, P. A.;
- Volkov, P. V.;
- Drozdov, Yu. N.;
- Koliadin, A. V.;
- Korolev, S. A.;
- Radischev, D. B.;
- Surovegina, E. A.;
- Shashkin, V. I.
Publication type:
Article
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210
By:
- Reznik, R. R.;
- Kotlyar, K. P.;
- Ilkiv, I. V.;
- Soshnikov, I. P.;
- Lebedev, S. P.;
- Lebedev, A. A.;
- Kirilenko, D. A.;
- Alexeev, P. A.;
- Cirlin, G. E.
Publication type:
Article
Modification of the Ferromagnetic Properties of Si1 -xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1424, doi. 10.1134/S1063782618110179
By:
- Novodvorsky, O. A.;
- Mikhalevsky, V. A.;
- Gusev, D. S.;
- Lotin, A. A.;
- Parshina, L. S.;
- Khramova, O. D.;
- Cherebylo, E. A.;
- Drovosekov, A. B.;
- Rylkov, V. V.;
- Nikolaev, S. N.;
- Chernoglazov, K. Yu.;
- Maslakov, K. I.
Publication type:
Article
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1420, doi. 10.1134/S1063782618110155
By:
- Morozov, K. M.;
- Ivanov, K. A.;
- Selenin, N.;
- Mikhrin, S.;
- de Sa Pereira, D.;
- Menelaou, C.;
- Monkman, A. P.;
- Kaliteevski, M. A.
Publication type:
Article
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258
By:
- Cirlin, G. E.;
- Reznik, R. R.;
- Samsonenko, Yu. B.;
- Khrebtov, A. I.;
- Kotlyar, K. P.;
- Ilkiv, I. V.;
- Soshnikov, I. P.;
- Kirilenko, D. A.;
- Kryzhanovskaya, N. V.
Publication type:
Article
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X
By:
- Yunin, P. A.;
- Drozdov, Yu. N.;
- Khrykin, O. I.;
- Grigoryev, V. A.
Publication type:
Article
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo-Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1407, doi. 10.1134/S1063782618110209
By:
- Puzanov, A. S.;
- Obolenskiy, S. V.;
- Kozlov, V. A.
Publication type:
Article
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1403, doi. 10.1134/S106378261811009X
By:
- Gudina, S. V.;
- Bogolyubskii, A. S.;
- Neverov, V. N.;
- Shelushinina, N. G.;
- Yakunin, M. V.
Publication type:
Article
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106
By:
- Kalentyeva, I. L.;
- Vikhrova, O. V.;
- Danilov, Yu. A.;
- Zvonkov, B. N.;
- Kudrin, A. V.;
- Antonov, I. N.
Publication type:
Article
Spinodal Decomposition in InSb/AlAs Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1392, doi. 10.1134/S1063782618110027
By:
- Abramkin, D. S.;
- Bakarov, A. K.;
- Gutakovskii, A. K.;
- Shamirzaev, T. S.
Publication type:
Article
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1386, doi. 10.1134/S1063782618110052
By:
- Bovkun, L. S.;
- Maremyanin, K. V.;
- Ikonnikov, A. V.;
- Spirin, K. E.;
- Aleshkin, V. Ya.;
- Potemski, M.;
- Piot, B. A.;
- Orlita, M.;
- Mikhailov, N. N.;
- Dvoretskii, S. A.;
- Gavrilenko, V. I.
Publication type:
Article
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1380, doi. 10.1134/S1063782618110118
By:
- Khabibullin, R. A.;
- Shchavruk, N. V.;
- Ponomarev, D. S.;
- Ushakov, D. V.;
- Afonenko, A. A.;
- Vasil’evskii, I. S.;
- Zaycev, A. A.;
- Danilov, A. I.;
- Volkov, O. Yu.;
- Pavlovskiy, V. V.;
- Maremyanin, K. V.;
- Gavrilenko, V. I.
Publication type:
Article
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1375, doi. 10.1134/S1063782618110234
By:
- Rumyantsev, V. V.;
- Kulikov, N. S.;
- Kadykov, A. M.;
- Fadeev, M. A.;
- Ikonnikov, A. V.;
- Kazakov, A. S.;
- Zholudev, M. S.;
- Aleshkin, V. Ya.;
- Utochkin, V. V.;
- Mikhailov, N. N.;
- Dvoretskii, S. A.;
- Morozov, S. V.;
- Gavrilenko, V. I.
Publication type:
Article
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 -xCdxTe Layers.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1369, doi. 10.1134/S1063782618110131
By:
- Kozlov, D. V.;
- Rumyantsev, V. V.;
- Morozov, S. V.;
- Kadykov, A. M.;
- Fadeev, M. A.;
- Hübers, H.-W.;
- Gavrilenko, V. I.
Publication type:
Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 11

Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond.

Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.

Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation.

Plasma Chemical Etching of Gallium Arsenide in C<sub>2</sub>F<sub>5</sub>Cl-Based Inductively Coupled Plasma.

Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells.

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface.

Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices.

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.

Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots.

Study of the Structural and Morphological Properties of HPHT Diamond Substrates.

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Modification of the Ferromagnetic Properties of Si<sub>1 -</sub><sub>x</sub>Mn<sub>x</sub> Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure.

Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region.

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo-Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation.

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase.

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.

Spinodal Decomposition in InSb/AlAs Heterostructures.

Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.

Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.

Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells.

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg<sub>1 -</sub><sub>x</sub>Cd<sub>x</sub>Te Layers.