Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 10

Results: 21

Nanostructure Growth in the Ga(In)AsP-GaAs System under Quasi-Equilibrium Conditions.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1363, doi. 10.1134/S1063782618100068

By:

Karlina, L. B.;
Vlasov, A. S.;
Soshnikov, I. P.;
Smirnova, I. P.;
Ber, B. Ya.;
Smirnov, A. B.

Publication type:

Article

Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1357, doi. 10.1134/S106378261810007X

By:

Lundin, W. V.;
Tsatsulnikov, A. F.;
Rodin, S. N.;
Sakharov, A. V.;
Usov, S. O.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Evtikhiev, V. P.

Publication type:

Article

Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1349, doi. 10.1134/S106378261810010X

By:

Markov, L. K.;
Pavluchenko, A. S.;
Smirnova, I. P.;
Pavlov, S. I.

Publication type:

Article

Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1341, doi. 10.1134/S1063782618100160

By:

Popov, V. P.;
Antonov, V. A.;
Vdovin, V. I.

Publication type:

Article

Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1334, doi. 10.1134/S1063782618100111

By:

Maskaeva, L. N.;
Fedorova, E. A.;
Markov, V. F.;
Kuznetsov, M. V.;
Lipina, O. A.;
Pozdin, A. V.

Publication type:

Article

Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1327, doi. 10.1134/S1063782618100172

By:

Ryaguzov, A. P.;
Nemkayeva, R. R.;
Guseinov, N. R.

Publication type:

Article

On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1323, doi. 10.1134/S1063782618100032

By:

Bodnar, I. V.;
Detkov, S. A.;
Kasyuk, Yu. V.;
Fedotova, Yu. A.

Publication type:

Article

Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 - xSex Crystals.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1317, doi. 10.1134/S1063782618100159

By:

Nemov, S. A.;
Andreeva, V. D.;
Ulashkevich, Yu. V.;
Povolotsky, A. V.;
Allahkhah, A. A.

Publication type:

Article

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1311, doi. 10.1134/S1063782618100093

By:

Maximov, M. V.;
Nadtochiy, A. M.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Vasil’ev, A. P.;
Ustinov, V. M.;
Serin, A. A.;
Gordeev, N. Yu.;
Zhukov, A. E.

Publication type:

Article

Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1307, doi. 10.1134/S1063782618100056

By:

Ivanov, P. A.;
Potapov, A. S.;
Kudoyarov, M. F.;
Samsonova, T. P.

Publication type:

Article

Determining the Hydrogen Concentration from the Photovoltage of Pd-Oxide-InP MIS Structures.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1303, doi. 10.1134/S1063782618100044

By:

Grebenshchikova, E. A.;
Salikhov, Kh. M.;
Sidorov, V. G.;
Shutaev, V. A.;
Yakovlev, Yu. P.

Publication type:

Article

Analysis of the Features of Hot-Carrier Degradation in FinFETs.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1298, doi. 10.1134/S1063782618100081

By:

Makarov, A. A.;
Tyaginov, S. E.;
Kaczer, B.;
Jech, M.;
Chasin, A.;
Grill, A.;
Hellings, G.;
Vexler, M. I.;
Linten, D.;
Grasser, T.

Publication type:

Article

Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1293, doi. 10.1134/S1063782618100226

By:

Volkov, V. V.;
Kogan, L. M.;
Turkin, A. N.;
Yunovich, A. E.

Publication type:

Article

Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal-Semiconductor Contacts with a Schottky Barrier.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1269, doi. 10.1134/S1063782618100202

By:

Torkhov, N. A.

Publication type:

Article

Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1264, doi. 10.1134/S1063782618100020

By:

Belolipetskiy, A. V.;
Nestoklon, M. O.;
Yassievich, I. N.

Publication type:

Article

Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4-Ar-O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( = 15.5 mol %).

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1255, doi. 10.1134/S1063782618100214

By:

Undalov, Yu. K.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Multilayer Quantum Well-Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1249, doi. 10.1134/S1063782618100147

By:

Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Nadtochiy, A. M.;
Maximov, M. V.;
Nevedomskiy, V. N.;
Sokura, L. A.;
Rouvimov, S. S.;
Shvarts, M. Z.;
Zhukov, A. E.

Publication type:

Article

Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Salii, R. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1238, doi. 10.1134/S1063782618100196

By:

Svitsiankou, I. E.;
Pavlovskii, V. N.;
Lutsenko, E. V.;
Yablonskii, G. P.;
Shiripov, V. Y.;
Khokhlov, E. A.;
Mudryi, A. V.;
Zhivulko, V. D.;
Borodavchenko, O. M.;
Yakushev, M. V.

Publication type:

Article

Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1233, doi. 10.1134/S1063782618100123

By:

Mezdrogina, M. M.;
Vinogradov, A. Ja.;
Kozhanova, Yu. V.

Publication type:

Article

Superionic Conductivity of (TlGaSe2)1 - x(TlInS2)x Solid Solutions.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1229, doi. 10.1134/S1063782618100184

By:

Sardarli, R. M.;
Abdullayev, A. P.;
Aliyeva, N. A.;
Salmanov, F. T.;
Yusifov, M. Y.;
Orudjeva, A. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 10

Nanostructure Growth in the Ga(In)AsP-GaAs System under Quasi-Equilibrium Conditions.

Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.

Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films.

Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide.

Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties.

Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films.

On the Growth of FeIn<sub>2</sub>S<sub>2</sub>Se<sub>2</sub> Single Crystals and the Study of their Properties.

Specific Features of the IR Reflectance and Raman Spectra of Sb<sub>2</sub>Te<sub>3 -</sub> <sub>x</sub>Se<sub>x</sub> Crystals.

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates.

Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes.

Determining the Hydrogen Concentration from the Photovoltage of Pd-Oxide-InP MIS Structures.

Analysis of the Features of Hot-Carrier Degradation in FinFETs.

Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs.

Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal-Semiconductor Contacts with a Schottky Barrier.

Simulation of Electron and Hole States in Si Nanocrystals in a SiO<sub>2</sub> Matrix: Choice of Parameters of the Empirical Tight-Binding Method.

Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH<sub>4</sub>-Ar-O<sub>2</sub>) Gas Phase on ncl-Si Growth in an a-SiO<sub>x</sub>:H matrix ( = 15.5 mol %).

Multilayer Quantum Well-Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters.

Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.

Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se<sub>2</sub> Films Deposited by Magnetron-Assisted Sputtering.

Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering.

Superionic Conductivity of (TlGaSe<sub>2</sub>)<sub>1 -</sub> <sub>x</sub>(TlInS<sub>2</sub>)<sub>x</sub> Solid Solutions.