Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 1

Results: 24

Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 6, doi. 10.1134/S1063782618010086
By:
- Chernenko, A.;
- Brichkin, A.;
- Novikov, S.;
- Schneider, C.;
- Hoefling, S.
Publication type:
Article
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 12, doi. 10.1134/S1063782618010098
By:
- Gudina, S.;
- Neverov, V.;
- Ilchenko, E.;
- Bogolubskii, A.;
- Harus, G.;
- Shelushinina, N.;
- Podgornykh, S.;
- Yakunin, M.;
- Mikhailov, N.;
- Dvoretsky, S.
Publication type:
Article
Ultrafast Dynamics of Photoinduced Electron-Hole Plasma in Semiconductor Nanowires.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 19, doi. 10.1134/S1063782618010244
By:
- Trukhin, V.;
- Bouravleuv, A.;
- Mustafin, I.;
- Cirlin, G.;
- Kakko, J.;
- Lipsanen, H.
Publication type:
Article
On Mobility of Definite Energy Charge Carriers.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 24, doi. 10.1134/S1063782618010049
By:
- Belousov, Yu.;
- Gorelkin, V.;
- Chernousov, I.
Publication type:
Article
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 31, doi. 10.1134/S1063782618010141
By:
- Musaev, A.
Publication type:
Article
Infrared Reflection Spectra of PbSnSe ( x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 34, doi. 10.1134/S1063782618010177
By:
- Novikova, N.;
- Yakovlev, V.;
- Kucherenko, I.;
- Vinogradov, V.;
- Aleschenko, Yu.;
- Muratov, A.;
- Karczewski, G.;
- Chusnutdinow, S.
Publication type:
Article
Mechanism of the Semiconductor-Metal Phase Transition in SmGdS Thin Films.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 41, doi. 10.1134/S1063782618010116
By:
- Kaminsky, V.;
- Soloviev, S.;
- Khavrov, G.;
- Sharenkova, N.
Publication type:
Article
Mobility of the Two-Dimensional Electron Gas in DA- pHEMT Heterostructures with Various δ- n-Layer Profile Widths.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 44, doi. 10.1134/S1063782618010189
By:
- Protasov, D.;
- Bakarov, A.;
- Toropov, A.;
- Ber, B.;
- Kazantsev, D.;
- Zhuravlev, K.
Publication type:
Article
Bimodality in Arrays of InGaAs Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 53, doi. 10.1134/S1063782618010153
By:
- Nadtochiy, A.;
- Mintairov, S.;
- Kalyuzhnyy, N.;
- Rouvimov, S.;
- Nevedomskii, V.;
- Maximov, M.;
- Zhukov, A.
Publication type:
Article
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 59, doi. 10.1134/S1063782618010220
By:
- Sofronov, A.;
- Balagula, R.;
- Firsov, D.;
- Vorobjev, L.;
- Tonkikh, A.;
- Sarkisyan, H.;
- Hayrapetyan, D.;
- Petrosyan, L.;
- Kazaryan, E.
Publication type:
Article
On the Electret Effect in Polymer-Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 64, doi. 10.1134/S1063782618010128
By:
- Kurbanov, M.;
- Ramazanova, I.;
- Dadashev, Z.;
- Yusifova, U.;
- Huseynova, G.;
- Azizova, K.;
- Farajzadeh, I.
Publication type:
Article
Determination of Thermodynamic Parameters in the CuNiS Phase-Transition Regions.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 71, doi. 10.1134/S1063782618010037
By:
- Aliev, F.;
- Hasanov, H.;
- Rzaeva, A.;
- Jafarov, M.;
- Damirov, G.
Publication type:
Article
Peculiarities of the Properties of III-V Semiconductors in a Multigrain Structure.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 78, doi. 10.1134/S1063782618010256
By:
- Zhukov, N.;
- Kabanov, V.;
- Mihaylov, A.;
- Mosiyash, D.;
- Pereverzev, Ya.;
- Hazanov, A.;
- Shishkin, M.
Publication type:
Article
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 84, doi. 10.1134/S1063782618010074
By:
- Boiko, M.;
- Sharkov, M.;
- Karlina, L.;
- Boiko, A.;
- Konnikov, S.
Publication type:
Article
Two-Terminal Tandem Solar Cells DSC/ c-Si: Optimization of TiO-based Photoelectrode Parameters.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 88, doi. 10.1134/S1063782618010165
By:
- Nikolskaia, A.;
- Vildanova, M.;
- Kozlov, S.;
- Shevaleevskiy, O.
Publication type:
Article
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
By:
- Blokhin, S.;
- Bobrov, M.;
- Blokhin, A.;
- Kuzmenkov, A.;
- Vasil'ev, A.;
- Zadiranov, Yu.;
- Evropeytsev, E.;
- Sakharov, A.;
- Ledentsov, N.;
- Karachinsky, L.;
- Ospennikov, A.;
- Maleev, N.;
- Ustinov, V.
Publication type:
Article
On the Spatial Localization of Free Electrons in 4 H-SiC MOSFETS with an n Channel.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 100, doi. 10.1134/S1063782618010104
By:
- Ivanov, P.
Publication type:
Article
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 105, doi. 10.1134/S1063782618010025
By:
- Alekseev, A.;
- Al-Afeef, A.;
- Hedley, G.;
- Kharintsev, S.;
- Efimov, A.;
- Yedrisov, A.;
- Dyuzhev, N.;
- Samuel, I.
Publication type:
Article
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100).
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 112, doi. 10.1134/S1063782618010207
By:
- Seredin, P.;
- Lenshin, A.;
- Fedyukin, A.;
- Arsentyev, I.;
- Zhabotinsky, A.;
- Nikolaev, D.;
- Leiste, H.;
- Rinke, M.
Publication type:
Article
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 118, doi. 10.1134/S1063782618010050
By:
- Belyaev, A.;
- Antipov, V.;
- Rubets, V.
Publication type:
Article
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InAlAs ( x = 0.05-0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001).
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 120, doi. 10.1134/S1063782618010232
By:
- Solov'ev, V.;
- Chernov, M.;
- Sitnikova, A.;
- Brunkov, P.;
- Meltser, B.;
- Ivanov, S.
Publication type:
Article
Investigation of the Modified Structure of a Quantum Cascade Laser.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 126, doi. 10.1134/S106378261801013X
By:
- Mamutin, V.;
- Maleev, N.;
- Vasilyev, A.;
- Ilyinskaya, N.;
- Zadiranov, Yu.;
- Usikova, A.;
- Yagovkina, M.;
- Shernyakov, Yu.;
- Ustinov, V.
Publication type:
Article
On a New Mechanism for the Realization of Ohmic Contacts.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 131, doi. 10.1134/S1063782618010190
By:
- Sachenko, A.;
- Belyaev, A.;
- Konakova, R.
Publication type:
Article
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
By:
- Shtrom, I.;
- Sibirev, N.;
- Ubiivovk, E.;
- Samsonenko, Yu.;
- Khrebtov, A.;
- Reznik, R.;
- Bouravleuv, A.;
- Cirlin, G.
Publication type:
Article