Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 9
Results: 22
Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their optical properties.
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- Semiconductors, 2017, v. 51, n. 9, p. 1111, doi. 10.1134/S1063782617090196
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Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper.
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- Semiconductors, 2017, v. 51, n. 9, p. 1119, doi. 10.1134/S1063782617090172
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Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.
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- Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056
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Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon.
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- Semiconductors, 2017, v. 51, n. 9, p. 1133, doi. 10.1134/S1063782617090202
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Generation of surface electron states with a silicon-ultrathin-oxide interface under the field-induced damage of metal-oxide-semiconductor structures.
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- Semiconductors, 2017, v. 51, n. 9, p. 1136, doi. 10.1134/S1063782617090111
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On the delta-type doping of GaAs-based heterostructures with manganese compounds.
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- Semiconductors, 2017, v. 51, n. 9, p. 1141, doi. 10.1134/S1063782617090159
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Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs.
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- Semiconductors, 2017, v. 51, n. 9, p. 1148, doi. 10.1134/S1063782617090081
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High-temperature annealing of macroporous silicon in an inert-gas flow.
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- Semiconductors, 2017, v. 51, n. 9, p. 1153, doi. 10.1134/S1063782617090032
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Characteristic properties of macroporous silicon sintering in an argon atmosphere.
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- Semiconductors, 2017, v. 51, n. 9, p. 1164, doi. 10.1134/S1063782617090044
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Derivation of an analytical expression for a physical process from an experimental curve with kinks.
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- Semiconductors, 2017, v. 51, n. 9, p. 1174, doi. 10.1134/S1063782617090093
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Degradation of micromorphous thin-film silicon (α-Si/μ c-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring.
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- Semiconductors, 2017, v. 51, n. 9, p. 1180, doi. 10.1134/S106378261709007X
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Hopping conductivity and dielectric relaxation in Schottky barriers on GaN.
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- Semiconductors, 2017, v. 51, n. 9, p. 1186, doi. 10.1134/S1063782617090068
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Transient switch-off of a 4 H-SiC bipolar transistor from the deep-saturation mode.
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- Semiconductors, 2017, v. 51, n. 9, p. 1194, doi. 10.1134/S1063782617090238
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Electric-field sensor based on a double quantum dot in a microcavity.
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- Semiconductors, 2017, v. 51, n. 9, p. 1200, doi. 10.1134/S1063782617090214
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: I. Physics of the switching process.
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- Semiconductors, 2017, v. 51, n. 9, p. 1208, doi. 10.1134/S1063782617090123
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: II. Energy efficiency.
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- Semiconductors, 2017, v. 51, n. 9, p. 1214, doi. 10.1134/S1063782617090135
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Electrical and thermal properties of photoconductive antennas based on InGaAs ( x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.
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- Semiconductors, 2017, v. 51, n. 9, p. 1218, doi. 10.1134/S1063782617090160
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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes.
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- Semiconductors, 2017, v. 51, n. 9, p. 1224, doi. 10.1134/S1063782617090184
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High-voltage MIS-gated GaN transistors.
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- Semiconductors, 2017, v. 51, n. 9, p. 1229, doi. 10.1134/S106378261709010X
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Formation of low-dimensional structures in the InSb/AlAs heterosystem.
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- Semiconductors, 2017, v. 51, n. 9, p. 1233, doi. 10.1134/S1063782617090020
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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.
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- Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226
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Residual stresses in silicon and their evolution upon heat treatment and irradiation.
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- Semiconductors, 2017, v. 51, n. 9, p. 1107, doi. 10.1134/S1063782617090147
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