Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 8

Results: 32

Optimization of a segmented generating leg.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1009, doi. 10.1134/S1063782617080103

By:

Drabkin, I.;
Osvenskii, V.

Publication type:

Article

Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 981, doi. 10.1134/S1063782617080255

By:

Poshekhonov, R.;
Arutyunyan, G.;
Pankratov, S.;
Osipkov, A.;
Onishchenko, D.;
Leontyev, A.

Publication type:

Article

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1101, doi. 10.1134/S1063782617080310

By:

Sokura, L.;
Parkhomenko, Ya.;
Moiseev, K.;
Nevedomsky, V.;
Bert, N.

Publication type:

Article

Response of thermoelectric parameters of BiSbTe films to secondary recrystallization.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 976, doi. 10.1134/S1063782617080048

By:

Boykov, Yu.;
Danilov, V.

Publication type:

Article

Anisotropy of the thermopower in higher silicide of transitions metals.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 972, doi. 10.1134/S1063782617080188

By:

Kusnetsova, V.;
Zaitsev, V.;
Solomkin, F.;
Novikov, S.

Publication type:

Article

Thermoelements from antimony- and bismuth-chalcogenide alloys.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 986, doi. 10.1134/S1063782617080140

By:

Ivanova, L.;
Nikhezina, I.;
Granatkina, Yu.;
Dudarev, V.;
Kichik, S.;
Mel'nikov, A.

Publication type:

Article

Specific features of the transport properties of the LuBiTe compound.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 989, doi. 10.1134/S1063782617080322

By:

Yaprintsev, M.;
Lyubushkin, R.;
Soklakova, O.;
Ivanov, O.

Publication type:

Article

Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 979, doi. 10.1134/S1063782617080206

By:

Lebedev, Yu.;
Ivanov, A.;
Il'in, A.;
Chuyko, A.

Publication type:

Article

Superconducting properties of (PbSn)Te doped with indium under conditions of hydrostatic compression.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1017, doi. 10.1134/S106378261708022X

By:

Mikhailin, N.;
Parfeniev, R.;
Chernyaev, A.;
Shamshur, D.;
Andrianov, G.

Publication type:

Article

On the band structure of SbTeSe (0 ≤ x ≤ 0.1): Kinetic and optical data.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 992, doi. 10.1134/S1063782617080243

By:

Nemov, S.;
Ulashkevich, Yu.;
Allahkhah, A.;
Jafarov, M.

Publication type:

Article

Contact resistance in spark plasma sintered segmented legs.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 996, doi. 10.1134/S1063782617080097

By:

Drabkin, I.;
Osvensky, V.;
Sorokin, A.;
Panchenko, V.;
Narozhnaia, O.

Publication type:

Article

CeB thin films produced on different substrates by electron-beam deposition.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 999, doi. 10.1134/S1063782617080176

By:

Kuzanyan, A.;
Badalyan, G.;
Petrosyan, S.;
Vardanyan, V.;
Gurin, V.;
Volkov, M.;
Pilosyan, S.

Publication type:

Article

Thermoelectric properties of BiTeSe solid solutions of different particle-size composition.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1002, doi. 10.1134/S1063782617080139

By:

Ivanova, L.;
Granatkina, Yu.;
Petrova, L.;
Nikhezina, I.;
Malchev, A.;
Alenkov, V.;
Kichik, S.;
Melnikov, A.

Publication type:

Article

Structure of BiSeTe alloy plates obtained by crystallization in a flat cavity by the Bridgman method.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1021, doi. 10.1134/S1063782617080085

By:

Demcheglo, V.;
Voronin, A.;
Tabachkova, N.;
Bublik, V.;
Ponomaryov, V.

Publication type:

Article

Thermoelectric properties of the MgGeSn solid solution with p-type conductivity.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1005, doi. 10.1134/S1063782617080127

By:

Isachenko, G.;
Samunin, A.;
Zaitsev, V.;
Gurieva, E.;
Konstantinov, P.

Publication type:

Article

MnAgInS single crystals: Crystal structure, band gap, and thermal expansion.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1027, doi. 10.1134/S1063782617080036

By:

Bodnar, I.;
Tkhan, Chan

Publication type:

Article

High-temperature diffusion of magnesium in dislocation-free silicon.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1031, doi. 10.1134/S1063782617080292

By:

Shuman, V.;
Astrov, Yu.;
Lodygin, A.;
Portsel, L.

Publication type:

Article

Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1012, doi. 10.1134/S1063782617080267

By:

Prokofieva, L.;
Nasredinov, F.;
Konstantinov, P.;
Shabaldin, A.

Publication type:

Article

Influence of traps in silicon dioxide on the breakdown of MOS structures.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1062, doi. 10.1134/S1063782617080024

By:

Aleksandrov, O.

Publication type:

Article

Thermoelectric properties of BiSbTe ribbons prepared by melt spinning.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1024, doi. 10.1134/S106378261708005X

By:

Burkov, A.;
Novikov, S.;
Tang, X.;
Yan, Y.

Publication type:

Article

Complex structure of optical transitions from the core d-levels of InAs and InSb crystals.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1034, doi. 10.1134/S1063782617080309

By:

Sobolev, V.;
Perevoshchikov, D.

Publication type:

Article

Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1047, doi. 10.1134/S1063782617080279

By:

Sekerbayev, K.;
Taurbayev, Ye.;
Efimova, A.;
Timoshenko, V.;
Taurbayev, T.

Publication type:

Article

Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100).

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1093, doi. 10.1134/S106378261708019X

By:

Lebedev, M.;
Lvova, T.;
Pavlov, S.;
Sedova, I.

Publication type:

Article

On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1052, doi. 10.1134/S1063782617080152

By:

Kerimi, M.

Publication type:

Article

Impurity levels in HgInTe crystals.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1041, doi. 10.1134/S1063782617080061

By:

Chupyra, S.;
Grushka, O.;
Bilichuk, S.

Publication type:

Article

Effects of irradiation with 8-MeV protons on n-3 C-SiC heteroepitaxial layers.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1044, doi. 10.1134/S1063782617080218

By:

Lebedev, A.;
Ber, B.;
Oganesyan, G.;
Belov, S.;
Lebedev, S.;
Nikitina, I.;
Seredova, N.;
Shakhov, L.;
Kozlovski, V.

Publication type:

Article

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1067, doi. 10.1134/S1063782617080115

By:

Gavrilin, I.;
Gromov, D.;
Dronov, A.;
Dubkov, S.;
Volkov, R.;
Trifonov, A.;
Borgardt, N.;
Gavrilov, S.

Publication type:

Article

Study of the crystal and electronic structure of graphene films grown on 6 H-SiC (0001).

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1072, doi. 10.1134/S1063782617080073

By:

Davydov, V.;
Usachov, D.;
Lebedev, S.;
Smirnov, A.;
Levitskii, V.;
Eliseyev, I.;
Alekseev, P.;
Dunaevskiy, M.;
Vilkov, O.;
Rybkin, A.;
Lebedev, A.

Publication type:

Article

Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280

By:

Seredin, P.;
Lenshin, A.;
Khudyakov, Yu.;
Arsentyev, I.;
Kaliuzhny, N.;
Mintairov, S.;
Nikolaev, D.;
Prutskij, Tatiana

Publication type:

Article

Current-voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1081, doi. 10.1134/S1063782617080231

By:

Mnatsakanov, T.;
Tandoev, A.;
Levinshtein, M.;
Yurkov, S.;
Palmour, J.

Publication type:

Article

Erratum to: 'Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron'.

Published in:

2017

By:

Surovegina, E.;
Demidov, E.;
Drozdov, M.;
Murel, A.;
Khrykin, O.;
Shashkin, V.;
Lobaev, M.;
Gorbachev, A.;
Viharev, A.;
Bogdanov, S.;
Isaev, V.;
Muchnikov, A.;
Chernov, V.;
Radishchev, D.;
Batler, J.

Publication type:

Erratum

Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)][(Bi, Sb)(Te, Se)] ( m, n = 0, 1, 2,...) family within the theory of closely packed spheres.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 969, doi. 10.1134/S1063782617080164

By:

Korzhuev, M.;
Mihajlova, A.;
Kretova, M.;
Avilov, E.

Publication type:

Article