Prospects of using rare-earth hexaborides in thermoelectric single-photon detectors.
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- Semiconductors, 2017, v. 51, n. 7, p. 870, doi. 10.1134/S1063782617070235
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- Article
Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 7
Results: 35
1
2
The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals.
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- Semiconductors, 2017, v. 51, n. 7, p. 887, doi. 10.1134/S1063782617070302
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- Article
3
Preparation and study of the thermoelectric properties of FeTiSnSi Heusler alloys.
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- Semiconductors, 2017, v. 51, n. 7, p. 891, doi. 10.1134/S1063782617070363
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- Article
4
Thermoelectric materials for different temperature levels.
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- Semiconductors, 2017, v. 51, n. 7, p. 909, doi. 10.1134/S1063782617070132
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- Article
5
Resistance and thermoelectric power of carbon fibers upon changing the conductivity type.
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- Semiconductors, 2017, v. 51, n. 7, p. 834, doi. 10.1134/S1063782617070156
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- Article
6
On the conduction-band structure of bismuth telluride: optical absorption data.
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- Semiconductors, 2017, v. 51, n. 7, p. 836, doi. 10.1134/S1063782617070351
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- Article
7
Measurement of the thickness of block-structured bismuth films by atomic-force microscopy combined with selective chemical etching.
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- Semiconductors, 2017, v. 51, n. 7, p. 840, doi. 10.1134/S1063782617070065
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- Article
8
Segmented thermoelectric unicouple for an operating temperature range of 30-320°C.
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- Semiconductors, 2017, v. 51, n. 7, p. 847, doi. 10.1134/S1063782617070338
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9
Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields.
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- Semiconductors, 2017, v. 51, n. 7, p. 843, doi. 10.1134/S1063782617070259
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- Article
10
Experimental and theoretical study of the thermoelectric properties of copper selenide.
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- Semiconductors, 2017, v. 51, n. 7, p. 854, doi. 10.1134/S1063782617070041
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- Article
11
Thermoelectric battery based on bundles of Bi and Sb nanowires in anodic alumina matrices.
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- Semiconductors, 2017, v. 51, n. 7, p. 850, doi. 10.1134/S1063782617070107
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- Article
12
Thermoelectric power of BiSb and BiSb thin films.
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- Semiconductors, 2017, v. 51, n. 7, p. 862, doi. 10.1134/S106378261707034X
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- Article
13
Simulation of the Q mode of a thermoelectric cooler taking into account thermal resistances at the cool and hot sides.
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- Semiconductors, 2017, v. 51, n. 7, p. 858, doi. 10.1134/S1063782617070260
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- Article
14
Structure of the CuSe compound produced by different methods.
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- Semiconductors, 2017, v. 51, n. 7, p. 866, doi. 10.1134/S1063782617070144
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- Article
15
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)][(Bi,Sb)(Te,Se)] ( m, n = 0, 1, 2...).
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- Semiconductors, 2017, v. 51, n. 7, p. 898, doi. 10.1134/S1063782617070193
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- Article
16
Estimation of the band gap of a series of new thermoelectric materials.
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- Semiconductors, 2017, v. 51, n. 7, p. 902, doi. 10.1134/S106378261707020X
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- Article
17
On the thermal conductivity of the gradient-inhomogeneous branches of thermoelements at a difference in the operating temperature.
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- Semiconductors, 2017, v. 51, n. 7, p. 874, doi. 10.1134/S106378261707003X
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18
Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness.
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- Semiconductors, 2017, v. 51, n. 7, p. 876, doi. 10.1134/S1063782617070211
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- Article
19
Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer.
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- Semiconductors, 2017, v. 51, n. 7, p. 879, doi. 10.1134/S1063782617070168
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- Article
20
Local thermoelectric effects in wide-gap semiconductors.
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- Semiconductors, 2017, v. 51, n. 7, p. 883, doi. 10.1134/S1063782617070296
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- Article
21
On a carbon nanostructure-based thermoelectric converter with record parameters.
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- Semiconductors, 2017, v. 51, n. 7, p. 906, doi. 10.1134/S1063782617070089
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- Article
22
Optimization of segmented cooling leg.
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- Semiconductors, 2017, v. 51, n. 7, p. 913, doi. 10.1134/S1063782617070077
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- Article
23
Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)][(Bi,Sb)(Te,Se)] ( m, n = 0, 1, 2...).
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- Semiconductors, 2017, v. 51, n. 7, p. 894, doi. 10.1134/S106378261707017X
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- Article
24
Thermoelectric and mechanical properties of BiSbTe solid solution prepared by melt solidification in liquid.
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- Semiconductors, 2017, v. 51, n. 7, p. 916, doi. 10.1134/S1063782617070284
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- Article
25
Preparation and properties of ZnSb-based thermoelectric material.
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- Semiconductors, 2017, v. 51, n. 7, p. 920, doi. 10.1134/S1063782617070314
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- Article
26
Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)][(Bi,Sb)(Te,Se)] ( m, n = 0, 1, 2...).
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- Semiconductors, 2017, v. 51, n. 7, p. 924, doi. 10.1134/S1063782617070181
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- Article
27
Thermoelectric properties of CeNdCoSb skutterudites.
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- Semiconductors, 2017, v. 51, n. 7, p. 928, doi. 10.1134/S1063782617070247
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28
Varistor effect in highly heterogeneous polymer-ZnO systems.
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- Semiconductors, 2017, v. 51, n. 7, p. 953, doi. 10.1134/S1063782617070223
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- Article
29
Thermoelectric energy converters: Environmental aspects.
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- Semiconductors, 2017, v. 51, n. 7, p. 932, doi. 10.1134/S1063782617070053
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30
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of BiTe layered single crystals.
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- Semiconductors, 2017, v. 51, n. 7, p. 942, doi. 10.1134/S1063782617070028
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31
Purcell effect in disordered one-dimensional photonic crystals.
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- Semiconductors, 2017, v. 51, n. 7, p. 947, doi. 10.1134/S1063782617070120
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- Article
32
Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it.
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- Semiconductors, 2017, v. 51, n. 7, p. 936, doi. 10.1134/S1063782617070090
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33
Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate.
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- Semiconductors, 2017, v. 51, n. 7, p. 831, doi. 10.1134/S1063782617070119
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- Article
34
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers.
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- Semiconductors, 2017, v. 51, n. 7, p. 959, doi. 10.1134/S1063782617070326
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- Article
35
Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development.
- Published in:
- Semiconductors, 2017, v. 51, n. 7, p. 965, doi. 10.1134/S1063782617070272
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- Article