Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 5

Results: 25

Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 565, doi. 10.1134/S1063782617050025

By:

Ageeva, N.;
Bronevoi, I.;
Zabegaev, D.;
Krivonosov, A.

Publication type:

Article

Optical an photoelectric properties odf ZnSe:Ti crystals.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 571, doi. 10.1134/S1063782617050190

By:

Nitsuk, Yu.;
Vaksman, Yu.

Publication type:

Article

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 559, doi. 10.1134/S1063782617050177

By:

Mezdrogina, M.;
Vinogradov, A.;
Levitskii, V.;
Terukova, E.;
Kozhanova, Yu.;
Aglikov, A.

Publication type:

Article

Ab initio calculations of phonon dispersion in CdGaSe.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 556, doi. 10.1134/S1063782617050074

By:

Dzhakhangirli, Z.;
Kerimova, T.;
Abdullayev, N.;
Mamedova, I.;
Mamedov, N.

Publication type:

Article

Injection-induced terahertz electroluminescence from silicon p-n structures.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 604, doi. 10.1134/S1063782617050256

By:

Zakhar'in, A.;
Vasilyev, Yu.;
Sobolev, N.;
Zabrodskii, V.;
Egorov, S.;
Andrianov, A.

Publication type:

Article

Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir-Blodgett method.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 576, doi. 10.1134/S1063782617050268

By:

Zarubanov, A.;
Plyusnin, V.;
Zhuravlev, K.

Publication type:

Article

Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 582, doi. 10.1134/S1063782617050244

By:

Vlasov, A.;
Karlina, L.;
Komissarenko, F.;
Ankudinov, A.

Publication type:

Article

Origin of discrepancies in the experimental values of the barrier height at metal-semiconductor junctions.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 591, doi. 10.1134/S1063782617050049

By:

Askerov, Sh.;
Abdullayeva, L.;
Hasanov, M.

Publication type:

Article

Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 594, doi. 10.1134/S1063782617050207

By:

Pashkovskii, A.

Publication type:

Article

Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 608, doi. 10.1134/S106378261705013X

By:

Kononov, N.;
Dorofeev, S.

Publication type:

Article

Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 586, doi. 10.1134/S1063782617050165

By:

Matyushkin, L.;
Reshetnikova, A.;
Andronov, A.;
Afonicheva, P.;
Myakin, S.;
Permiakov, N.;
Moshnikov, V.

Publication type:

Article

Negative annealing in silicon after the implantation of high-energy sodium ions.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 549, doi. 10.1134/S1063782617050141

By:

Korol', V.;
Zastavnoi, A.;
Kudriavtsev, Yu.;
Asomoza, R.

Publication type:

Article

Electronic structure of single-layer superlattices (GeC)(SiC), (SnC)(SiC), and (SnC)(GeC).

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 617, doi. 10.1134/S1063782617050050

By:

Basalaev, Yu.;
Malysheva, E.

Publication type:

Article

Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 628, doi. 10.1134/S1063782617050153

By:

Kurochkin, N.;
Katsaba, A.;
Ambrozevich, S.;
Vitukhnovsky, A.;
Vashchenko, A.;
Tananaev, P.

Publication type:

Article

Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 621, doi. 10.1134/S1063782617050086

By:

Grashchenko, A.;
Feoktistov, N.;
Osipov, A.;
Kalinina, E.;
Kukushkin, S.

Publication type:

Article

On the photoconductivity of TlInSe.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 632, doi. 10.1134/S1063782617050104

By:

Ismailov, N.;
Abilov, Ch.;
Gasanova, M.

Publication type:

Article

Laser (λ = 809 nm) power converter based on GaAs.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 645, doi. 10.1134/S1063782617050128

By:

Khvostikov, V.;
Sorokina, S.;
Potapovich, N.;
Khvostikova, O.;
Timoshina, N.

Publication type:

Article

Effect of hydrogen desorption on the mechanical properties and electron structure of diamond-like carbon nanothreads.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 636, doi. 10.1134/S1063782617050219

By:

Podlivaev, A.;
Openov, L.

Publication type:

Article

Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 640, doi. 10.1134/S1063782617050062

By:

Davydov, S.

Publication type:

Article

Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 649, doi. 10.1134/S1063782617050098

By:

Gusev, A.;
Lyubutin, S.;
Rukin, S.;
Tsyranov, S.

Publication type:

Article

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 663, doi. 10.1134/S1063782617050037

By:

Aleshkin, V.;
Baidus, N.;
Dubinov, A.;
Krasilnik, Z.;
Nekorkin, S.;
Novikov, A.;
Rykov, A.;
Yurasov, D.;
Yablonskiy, A.

Publication type:

Article

Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 657, doi. 10.1134/S1063782617050220

By:

Senokosov, E.;
Chukita, V.;
Khamidullin, R.;
Cheban, V.;
Odin, I.;
Chukichev, M.

Publication type:

Article

InAs QDs in a metamorphic InGaAs matrix, grown by MOCVD.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 672, doi. 10.1134/S1063782617050189

By:

Mintairov, S.;
Kalyuzhnyy, N.;
Maximov, M.;
Nadtochiy, A.;
Nevedomskiy, V.;
Zhukov, A.

Publication type:

Article

Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 667, doi. 10.1134/S1063782617050116

By:

Karlina, L.;
Vlasov, A.;
Ber, B.;
Kazantsev, D.;
Timoshina, N.;
Kulagina, M.;
Smirnov, A.

Publication type:

Article

Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 679, doi. 10.1134/S1063782617050232

By:

Singh, Pravesh;
Sharma, Sheetal;
Kumari, Sarita;
Saraswat, Vibhav;
Sharma, D.;
Verma, A.

Publication type:

Article