Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 3

Results: 26

Effect of the energy of bombarding electrons on the conductivity of n-4 H-SiC (CVD) epitaxial layers.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 299, doi. 10.1134/S1063782617030137

By:

Kozlovski, V.;
Lebedev, A.;
Strel'chuk, A.;
Davidovskaya, K.;
Vasil'ev, A.;
Makarenko, L.

Publication type:

Article

Crystal defects in solar cells produced by the method of thermomigration.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 285, doi. 10.1134/S1063782617030162

By:

Lozovskii, V.;
Lomov, A.;
Lunin, L.;
Seredin, B.;
Chesnokov, Yu.

Publication type:

Article

Effect of H implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 305, doi. 10.1134/S1063782617030113

By:

Klyui, N.;
Lozinskii, V.;
Liptuga, A.;
Dikusha, V.;
Oksanych, A.;
Kogdas', M.;
Perekhrest, A.;
Pritchin, S.

Publication type:

Article

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 290, doi. 10.1134/S1063782617030046

By:

Bannaya, V.

Publication type:

Article

Atomic configuration and charge state of hydrogen at dislocations in silicon.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 293, doi. 10.1134/S1063782617030265

By:

Vysotskii, N.;
Loshachenko, A.;
Vyvenko, O.

Publication type:

Article

Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 335, doi. 10.1134/S1063782617030125

By:

Kopach, V.;
Klepikova, K.;
Klochko, N.;
Khrypunov, G.;
Korsun, V.;
Lyubov, V.;
Kirichenko, M.;
Kopach, A.

Publication type:

Article

Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO/insulator structures from the results of synchrotron investigations.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 349, doi. 10.1134/S1063782617030241

By:

Turishchev, S.;
Terekhov, V.;
Koyuda, D.;
Ershov, A.;
Mashin, A.;
Parinova, E.;
Nesterov, D.;
Grachev, D.;
Karabanova, I.;
Domashevskaya, E.

Publication type:

Article

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071

By:

Galiev, G.;
Grekhov, M.;
Kitaeva, G.;
Klimov, E.;
Klochkov, A.;
Kolentsova, O.;
Kornienko, V.;
Kuznetsov, K.;
Maltsev, P.;
Pushkarev, S.

Publication type:

Article

On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 326, doi. 10.1134/S1063782617030150

By:

Lipatova, Zh.;
Kolobkova, E.;
Babkina, A.;
Nikonorov, N.

Publication type:

Article

Valence-band offsets in strained SiGeSn/Si layers with different tin contents.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 329, doi. 10.1134/S1063782617030058

By:

Bloshkin, A.;
Yakimov, A.;
Timofeev, V.;
Tuktamyshev, A.;
Nikiforov, A.;
Murashov, V.

Publication type:

Article

Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 344, doi. 10.1134/S1063782617030216

By:

Parkhomenko, H.;
Solovan, M.;
Mostovyi, A.;
Ulyanytsky, K.;
Maryanchuk, P.

Publication type:

Article

Effect of temperature and doping with Cu on the reflectance spectra of PbSbTe crystals.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 318, doi. 10.1134/S1063782617030204

By:

Nemov, S.;
Ulashkevich, Yu.

Publication type:

Article

Radiative d-d transitions at tungsten centers in II-VI semiconductors.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 322, doi. 10.1134/S1063782617030253

By:

Ushakov, V.;
Krivobok, V.;
Pruchkina, A.

Publication type:

Article

Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 353, doi. 10.1134/S1063782617030101

By:

Kirsanov, N.;
Latukhina, N.;
Lizunkova, D.;
Rogozhina, G.;
Stepikhova, M.

Publication type:

Article

Optical properties of hybrid quantum-well-dots nanostructures grown by MOCVD.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 357, doi. 10.1134/S1063782617030198

By:

Mintairov, S.;
Kalyuzhnyy, N.;
Nadtochiy, A.;
Maximov, M.;
Rouvimov, S.;
Zhukov, A.

Publication type:

Article

AlN/GaN heterostructures for normally-off transistors.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 379, doi. 10.1134/S1063782617030277

By:

Zhuravlev, K.;
Malin, T.;
Mansurov, V.;
Tereshenko, O.;
Abgaryan, K.;
Reviznikov, D.;
Zemlyakov, V.;
Egorkin, V.;
Parnes, Ya.;
Tikhomirov, V.;
Prosvirin, I.

Publication type:

Article

Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149

By:

Kukushkin, S.;
Osipov, A.;
Red'kov, A.

Publication type:

Article

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034

By:

Balagula, R.;
Vinnichenko, M.;
Makhov, I.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.

Publication type:

Article

Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 367, doi. 10.1134/S1063782617030022

By:

Aliev, R.;
Gajiev, G.;
Gadzhialiev, M.;
Ismailov, A.;
Pirmagomedov, Z.

Publication type:

Article

Current-voltage characteristics of high-voltage 4 H-SiC p - n - n diodes in the avalanche breakdown mode.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 374, doi. 10.1134/S1063782617030095

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.;
Grekhov, I.

Publication type:

Article

A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 370, doi. 10.1134/S1063782617030083

By:

Ionychev, V.;
Shesterkina, A.

Publication type:

Article

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 402, doi. 10.1134/S106378261703023X

By:

Pavlikov, A.;
Latukhina, N.;
Chepurnov, V.;
Timoshenko, V.

Publication type:

Article

Effect of energy density on the target on SnO:Sb film properties when using a high-speed particle separator.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 407, doi. 10.1134/S1063782617030228

By:

Parshina, L.;
Khramova, O.;
Novodvorsky, O.;
Lotin, A.;
Petukhov, I.;
Putilin, F.;
Shcherbachev, K.

Publication type:

Article

Pulsed laser deposition of AlGaAs and GaP thin films onto Si substrates for photoelectric converters.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 387, doi. 10.1134/S1063782617030174

By:

Lunin, L.;
Lunina, M.;
Devitsky, O.;
Sysoev, I.

Publication type:

Article

Properties of ZnO:Er films obtained by the sol-gel method.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 392, doi. 10.1134/S1063782617030186

By:

Malyutina-Bronskaya, V.;
Semchenko, A.;
Sidsky, V.;
Fedorov, V.

Publication type:

Article

Single crystals of (FeInS) · (CuInS) alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 279, doi. 10.1134/S106378261703006X

By:

Bodnar, I.;
Zhafar, M.;
Kasyuk, Yu.;
Fedotova, Yu.

Publication type:

Article