Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells.
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- Semiconductors, 2017, v. 51, n. 12, p. 1542, doi. 10.1134/S1063782617120028
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- Article
Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 12
Results: 21
1
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Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations.
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- Semiconductors, 2017, v. 51, n. 12, p. 1552, doi. 10.1134/S1063782617120211
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- Article
3
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen.
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- Semiconductors, 2017, v. 51, n. 12, p. 1537, doi. 10.1134/S1063782617120041
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- Article
4
Manifestation of PT symmetry in the exciton spectra of quantum wells.
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- Semiconductors, 2017, v. 51, n. 12, p. 1547, doi. 10.1134/S1063782617120119
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- Article
5
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission.
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- Semiconductors, 2017, v. 51, n. 12, p. 1557, doi. 10.1134/S106378261712017X
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- Article
6
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential.
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- Semiconductors, 2017, v. 51, n. 12, p. 1562, doi. 10.1134/S106378261712003X
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- Article
7
Radiation-produced defects in germanium: Experimental data and models of defects.
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- Semiconductors, 2017, v. 51, n. 12, p. 1571, doi. 10.1134/S1063782617120065
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- Article
8
Study and simulation of electron transport in GalnSb based on Monte Carlo method.
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- Semiconductors, 2017, v. 51, n. 12, p. 1588, doi. 10.1134/S1063782617120053
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- Article
9
Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials.
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- Semiconductors, 2017, v. 51, n. 12, p. 1592, doi. 10.1134/S106378261712020X
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- Article
10
Effect of Ag in CdSe thin films prepared using thermal evaporation.
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- Semiconductors, 2017, v. 51, n. 12, p. 1597, doi. 10.1134/S1063782617120181
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- Article
11
Al-doped and pure ZnO thin films elaborated by sol-gel spin coating process for optoelectronic applications.
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- Semiconductors, 2017, v. 51, n. 12, p. 1604, doi. 10.1134/S1063782617120132
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- Article
12
Effect of high voltage electric field on structure and property of PEDOT:PSS film.
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- Semiconductors, 2017, v. 51, n. 12, p. 1611, doi. 10.1134/S1063782617120223
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- Article
13
A comparative study on the electronic and optical properties of SbSe thin film.
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- Semiconductors, 2017, v. 51, n. 12, p. 1615, doi. 10.1134/S1063782617120107
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- Article
14
Charge density at the AlO/Si interface in Metal-lnsulator-Semiconductor devices: Semiclassical and quantum mechanical descriptions.
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- Semiconductors, 2017, v. 51, n. 12, p. 1625, doi. 10.1134/S1063782617120089
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- Article
15
Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer.
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- Semiconductors, 2017, v. 51, n. 12, p. 1634, doi. 10.1134/S1063782617120168
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- Article
16
Electrical properties and the determination of interface state density from I- V, C- f and G- f measurements in Ir/Ru/ n-InGaN Schottky barrier diode.
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- Semiconductors, 2017, v. 51, n. 12, p. 1641, doi. 10.1134/S1063782617120156
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- Article
17
Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts.
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- Semiconductors, 2017, v. 51, n. 12, p. 1650, doi. 10.1134/S1063782617120120
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- Article
18
Single electron transistor: Energy-level broadening effect and thermionic contribution.
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- Semiconductors, 2017, v. 51, n. 12, p. 1656, doi. 10.1134/S1063782617120144
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- Article
19
Patterning approach for detecting defect in device manufacturing.
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- Semiconductors, 2017, v. 51, n. 12, p. 1661, doi. 10.1134/S1063782617120193
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- Article
20
The effects of electron irradiation and thermal dependence measurements on 4 H-SiC Schottky diode.
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- Semiconductors, 2017, v. 51, n. 12, p. 1666, doi. 10.1134/S1063782617120077
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- Article
21
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation.
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- Semiconductors, 2017, v. 51, n. 12, p. 1531, doi. 10.1134/S1063782617120090
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- Publication type:
- Article