Mechanism of resistive switching in films based on partially fluorinated graphene.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1306, doi. 10.1134/S1063782617100116
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 10
Results: 19
1
2
Effects of local photoexcitation of high-concentration charge carriers in silicon.
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- Semiconductors, 2017, v. 51, n. 10, p. 1290, doi. 10.1134/S1063782617100153
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- Article
3
Reflectance spectra of p-BiTe:Sn crystals in a wide IR region.
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- Semiconductors, 2017, v. 51, n. 10, p. 1295, doi. 10.1134/S1063782617100165
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- Article
4
Tight-binding simulation of silicon and germanium nanocrystals.
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- Semiconductors, 2017, v. 51, n. 10, p. 1274, doi. 10.1134/S1063782617100098
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- Article
5
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots.
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- Semiconductors, 2017, v. 51, n. 10, p. 1326, doi. 10.1134/S1063782617100049
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- Publication type:
- Article
6
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well.
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- Semiconductors, 2017, v. 51, n. 10, p. 1360, doi. 10.1134/S1063782617100086
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- Article
7
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field.
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- Semiconductors, 2017, v. 51, n. 10, p. 1343, doi. 10.1134/S1063782617100141
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- Article
8
Interdiffusion and phase formation in the Fe-TiO thin-film system.
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- Semiconductors, 2017, v. 51, n. 10, p. 1300, doi. 10.1134/S1063782617100025
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- Article
9
X-ray photoelectron spectroscopy studies of ZnSSe nanostructures produced in a porous aluminum-oxide matrix.
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- Semiconductors, 2017, v. 51, n. 10, p. 1350, doi. 10.1134/S1063782617100074
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- Publication type:
- Article
10
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity.
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- Semiconductors, 2017, v. 51, n. 10, p. 1313, doi. 10.1134/S1063782617100177
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- Article
11
Criterion for strong localization on a semiconductor surface in the Thomas-Fermi approximation.
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- Semiconductors, 2017, v. 51, n. 10, p. 1321, doi. 10.1134/S1063782617100062
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- Article
12
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation.
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- Semiconductors, 2017, v. 51, n. 10, p. 1354, doi. 10.1134/S1063782617100190
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- Article
13
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate.
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- Semiconductors, 2017, v. 51, n. 10, p. 1332, doi. 10.1134/S1063782617100207
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- Article
14
Photoluminescence of perovskite CsPb X ( X = Cl, Br, I) nanocrystals and solid solutions on their basis.
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- Semiconductors, 2017, v. 51, n. 10, p. 1337, doi. 10.1134/S106378261710013X
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- Article
15
Diffusion-Controlled growth of Ge nanocrystals in SiO films under conditions of ion synthesis at high pressure.
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- Semiconductors, 2017, v. 51, n. 10, p. 1364, doi. 10.1134/S1063782617100189
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- Publication type:
- Article
16
(FeInS) · (AgInS) alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1385, doi. 10.1134/S1063782617100050
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- Article
17
Anisotropic Jahn-Teller acceptors formed in GaAs by first-group elements with a filled d shell.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1247, doi. 10.1134/S1063782617100104
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- Publication type:
- Article
18
Formation and study of p-i-n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1370, doi. 10.1134/S1063782617100128
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- Article
19
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures.
- Published in:
- Semiconductors, 2017, v. 51, n. 10, p. 1377, doi. 10.1134/S1063782617100037
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- Publication type:
- Article