Works matching IS 10637826 AND DT 2017 AND VI 51 AND IP 10

Results: 19

Tight-binding simulation of silicon and germanium nanocrystals.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1274, doi. 10.1134/S1063782617100098
By:
- Gert, A.;
- Nestoklon, M.;
- Prokofiev, A.;
- Yassievich, I.
Publication type:
Article
Effects of local photoexcitation of high-concentration charge carriers in silicon.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1290, doi. 10.1134/S1063782617100153
By:
- Musaev, A.
Publication type:
Article
Reflectance spectra of p-BiTe:Sn crystals in a wide IR region.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1295, doi. 10.1134/S1063782617100165
By:
- Nemov, S.;
- Ulashkevich, Yu.;
- Allahkhah, A.
Publication type:
Article
Interdiffusion and phase formation in the Fe-TiO thin-film system.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1300, doi. 10.1134/S1063782617100025
By:
- Afonin, N.;
- Logacheva, V.
Publication type:
Article
Mechanism of resistive switching in films based on partially fluorinated graphene.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1306, doi. 10.1134/S1063782617100116
By:
- Ivanov, A.;
- Nebogatikova, N.;
- Kurkina, I.;
- Antonova, I.
Publication type:
Article
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1313, doi. 10.1134/S1063782617100177
By:
- Oveshnikov, L.;
- Nekhaeva, E.
Publication type:
Article
Criterion for strong localization on a semiconductor surface in the Thomas-Fermi approximation.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1321, doi. 10.1134/S1063782617100062
By:
- Bondarenko, V.;
- Filimonov, A.
Publication type:
Article
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1326, doi. 10.1134/S1063782617100049
By:
- Bayramov, F.;
- Poloskin, E.;
- Chernev, A.;
- Toropov, V.;
- Dubina, M.;
- Bairamov, B.
Publication type:
Article
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1332, doi. 10.1134/S1063782617100207
By:
- Zubov, F.;
- Semenova, E.;
- Kulkova, I.;
- Yvind, K.;
- Kryzhanovskaya, N.;
- Maximov, M.;
- Zhukov, A.
Publication type:
Article
Photoluminescence of perovskite CsPb X ( X = Cl, Br, I) nanocrystals and solid solutions on their basis.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1337, doi. 10.1134/S106378261710013X
By:
- Matyushkin, L.;
- Moshnikov, V.
Publication type:
Article
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1343, doi. 10.1134/S1063782617100141
By:
- Mikhailova, M.;
- Berezovets, V.;
- Parfeniev, R.;
- Danilov, L.;
- Safonchik, M.;
- Hospodková, A.;
- Pangrác, J.;
- Hulicius, E.
Publication type:
Article
X-ray photoelectron spectroscopy studies of ZnSSe nanostructures produced in a porous aluminum-oxide matrix.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1350, doi. 10.1134/S1063782617100074
By:
- Chukavin, A.;
- Valeev, R.;
- Beltiukov, A.
Publication type:
Article
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1354, doi. 10.1134/S1063782617100190
By:
- Vikulin, I.;
- Gorbachev, V.;
- Kurmashev, Sh.
Publication type:
Article
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1360, doi. 10.1134/S1063782617100086
By:
- Dikareva, N.;
- Zvonkov, B.;
- Vikhrova, O.;
- Nekorkin, S.;
- Aleshkin, V.;
- Dubinov, A.
Publication type:
Article
Diffusion-Controlled growth of Ge nanocrystals in SiO films under conditions of ion synthesis at high pressure.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1364, doi. 10.1134/S1063782617100189
By:
- Tyschenko, I.;
- Cherkov, A.
Publication type:
Article
Formation and study of p-i-n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1370, doi. 10.1134/S1063782617100128
By:
- Krivyakin, G.;
- Volodin, V.;
- Shklyaev, A.;
- Mortet, V.;
- More-Chevalier, J.;
- Ashcheulov, P.;
- Remes, Z.;
- Stuchliková, T.;
- Stuchlik, J.
Publication type:
Article
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1377, doi. 10.1134/S1063782617100037
By:
- Alfimova, D.;
- Lunin, L.;
- Lunina, M.;
- Arustamyan, D.;
- Kazakova, A.;
- Chebotarev, S.
Publication type:
Article
(FeInS) · (AgInS) alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1385, doi. 10.1134/S1063782617100050
By:
- Bodnar, I.;
- Barugu, T.;
- Kasyuk, Yu.;
- Fedotova, Yu.
Publication type:
Article
Anisotropic Jahn-Teller acceptors formed in GaAs by first-group elements with a filled d shell.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1247, doi. 10.1134/S1063782617100104
By:
- Gutkin, A.;
- Averkiev, N.
Publication type:
Article