Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 9
Results: 24
Low-temperature conductivity of gadolinium sulfides.
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- Semiconductors, 2016, v. 50, n. 9, p. 1137, doi. 10.1134/S1063782616090177
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Electrical parameters of polycrystalline SmEuS rare-earth semiconductors.
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- Semiconductors, 2016, v. 50, n. 9, p. 1141, doi. 10.1134/S1063782616090116
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Temperature dependence of the band gap of the single-crystal compounds InS and AgInS.
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- Semiconductors, 2016, v. 50, n. 9, p. 1145, doi. 10.1134/S1063782616090050
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Plasmon-phonon coupling in the infrared reflectance spectra of BiSe films.
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- Semiconductors, 2016, v. 50, n. 9, p. 1151, doi. 10.1134/S1063782616090190
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Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO-Si structures.
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- Semiconductors, 2016, v. 50, n. 9, p. 1156, doi. 10.1134/S1063782616090104
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Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector.
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- Semiconductors, 2016, v. 50, n. 9, p. 1163, doi. 10.1134/S1063782616090062
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Calculation of the Schottky barrier and current-voltage characteristics of metal-alloy structures based on silicon carbide.
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- Semiconductors, 2016, v. 50, n. 9, p. 1168, doi. 10.1134/S1063782616090025
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On the fractal nature of light-emitting structures based on III-N nanomaterials and related phenomena.
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- Semiconductors, 2016, v. 50, n. 9, p. 1173, doi. 10.1134/S1063782616090207
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Optical properties of hybrid quantum-confined structures with high absorbance.
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- Semiconductors, 2016, v. 50, n. 9, p. 1180, doi. 10.1134/S1063782616090189
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Optical properties of InGaAs/InGaAlAs quantum wells for the 1520-1580 nm spectral range.
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- Semiconductors, 2016, v. 50, n. 9, p. 1186, doi. 10.1134/S1063782616090098
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Photoluminescence spectra of thin films of ZnTPP-C and CuTPP-C molecular complexes.
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- Semiconductors, 2016, v. 50, n. 9, p. 1191, doi. 10.1134/S1063782616090074
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Laser sintering of a TiO nanoporous film on a flexible substrate for application in solar cells.
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- Semiconductors, 2016, v. 50, n. 9, p. 1198, doi. 10.1134/S1063782616090153
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Dielectric properties of layered FeGaInS single crystals in an alternating electric field.
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- Semiconductors, 2016, v. 50, n. 9, p. 1203, doi. 10.1134/S1063782616090165
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Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures.
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- Semiconductors, 2016, v. 50, n. 9, p. 1208, doi. 10.1134/S1063782616090037
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On methods of determining the band gap of semiconductor structures with p-n junctions.
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- Semiconductors, 2016, v. 50, n. 9, p. 1216, doi. 10.1134/S1063782616090256
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Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures.
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- Semiconductors, 2016, v. 50, n. 9, p. 1220, doi. 10.1134/S1063782616090128
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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions.
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- Semiconductors, 2016, v. 50, n. 9, p. 1225, doi. 10.1134/S1063782616090244
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Synthesis and study of thin TiO films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters.
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- Semiconductors, 2016, v. 50, n. 9, p. 1231, doi. 10.1134/S1063782616090141
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Formation of the low-resistivity compound CuGe by low-temperature treatment in an atomic hydrogen flux.
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- Semiconductors, 2016, v. 50, n. 9, p. 1236, doi. 10.1134/S1063782616090086
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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs.
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- Semiconductors, 2016, v. 50, n. 9, p. 1241, doi. 10.1134/S1063782616090232
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Conditions of growth of high-quality relaxed SiGe layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire.
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- Semiconductors, 2016, v. 50, n. 9, p. 1248, doi. 10.1134/S1063782616090220
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Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells.
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- Semiconductors, 2016, v. 50, n. 9, p. 1254, doi. 10.1134/S106378261609013X
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Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 9, p. 1261, doi. 10.1134/S1063782616090219
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Halogen diffusion on a Ga-stabilized ζ-GaAs(001)-(4 × 2) surface.
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- Semiconductors, 2016, v. 50, n. 9, p. 1131, doi. 10.1134/S1063782616090049
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