Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 7

Results: 25

Effect of coulomb correlations on luminescence and absorption in compensated semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 888, doi. 10.1134/S1063782616070034

By:

Bogoslovskiy, N.;
Petrov, P.;
Ivánov, Yu.;
Averkiev, N.;
Tsendin, K.

Publication type:

Article

Local emission spectroscopy of surface micrograins in AB semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 894, doi. 10.1134/S1063782616070265

By:

Zhukov, N.;
Gluhovskoy, E.;
Mosiyash, D.

Publication type:

Article

Indium nanowires at the silicon surface.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 901, doi. 10.1134/S1063782616070095

By:

Kozhukhov, A.;
Sheglov, D.;
Latyshev, A.

Publication type:

Article

Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 904, doi. 10.1134/S1063782616070125

By:

Kuznetsova, Ya.;
Jmerik, V.;
Nechaev, D.;
Kuznetsov, A.;
Zamoryanskaya, M.

Publication type:

Article

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 853, doi. 10.1134/S106378261607023X

By:

Seredin, P.;
Fedyukin, A.;
Arsentyev, I.;
Vavilova, L.;
Tarasov, I.;
Prutskij, T.;
Leiste, H.;
Rinke, M.

Publication type:

Article

Optical properties of p-i-n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 935, doi. 10.1134/S1063782616070101

By:

Krivyakin, G.;
Volodin, V.;
Kochubei, S.;
Kamaev, G.;
Purkrt, A.;
Remes, Z.;
Fajgar, R.;
Stuchliková, T.;
Stuchlik, J.

Publication type:

Article

Features of conductivity mechanisms in heavily doped compensated VTiFeSb Semiconductor.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 860, doi. 10.1134/S1063782616070204

By:

Romaka, V.;
Rogl, P.;
Kaczorowski, D.;
Stadnyk, Yu.;
Krayovskyy, V.;
Horyn, A.

Publication type:

Article

Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113

By:

Kudryashov, A.;
Kytin, V.;
Lunin, R.;
Kulbachinskii, V.;
Banerjee, A.

Publication type:

Article

Electron exchange between tin impurity U centers in PbSSe alloys.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 876, doi. 10.1134/S1063782616070149

By:

Marchenko, A.;
Terukov, E.;
Seregin, P.;
Rasnjuk, A.;
Kiselev, V.

Publication type:

Article

Field dependence of the electron drift velocity along the hexagonal axis of 4 H-SiC.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 883, doi. 10.1134/S106378261607006X

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.;
Grekhov, I.

Publication type:

Article

Chloride epitaxy of β-GaO layers grown on c-sapphire substrates.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 980, doi. 10.1134/S1063782616070186

By:

Nikolaev, V.;
Pechnikov, A.;
Stepanov, S.;
Sharofidinov, Sh.;
Golovatenko, A.;
Nikitina, I.;
Smirnov, A.;
Bugrov, V.;
Romanov, A.;
Brunkov, P.;
Kirilenko, D.

Publication type:

Article

Voltage oscillations in the case of the switching effect in thin layers of Ge-Sb-Te chalcogenides in the current mode.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 941, doi. 10.1134/S1063782616070046

By:

Fefelov, S.;
Kazakova, L.;
Arsova, D.;
Kozyukhin, S.;
Tsendin, K.;
Prikhodko, O.

Publication type:

Article

Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6 H-SiC (000 $$\bar 1$$) in vacuum.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 951, doi. 10.1134/S1063782616070083

By:

Kotousova, I.;
Lebedev, S.;
Lebedev, A.

Publication type:

Article

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 910, doi. 10.1134/S1063782616070216

By:

Romanov, V.;
Dement'ev, P.;
Moiseev, K.

Publication type:

Article

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 915, doi. 10.1134/S1063782616070253

By:

Vasilyev, Yu.;
Mikhailov, N.;
Vasilyeva, G.;
Ivánov, Yu.;
Zakhar'in, A.;
Andrianov, A.;
Vorobiev, L.;
Firsov, D.;
Grigoriev, M.;
Antonov, A.;
Ikonnikov, A.;
Gavrilenko, V.

Publication type:

Article

Semi-insulating 4 H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 920, doi. 10.1134/S1063782616070071

By:

Ivanov, P.;
Kudoyarov, M.;
Kozlovski, M.;
Potapov, A.;
Samsonova, T.

Publication type:

Article

Photovoltage and photocurrent in Pd-oxide-InP structures in a hydrogen medium.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 929, doi. 10.1134/S1063782616070058

By:

Imenkov, A.;
Grebenshchikova, E.;
Shutaev, V.;
Ospennikov, A.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article

Study of deep levels in GaAs p-i-n structures.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 924, doi. 10.1134/S1063782616070241

By:

Sobolev, M.;
Soldatenkov, F.;
Kozlov, V.

Publication type:

Article

Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT-MOS transistors.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 957, doi. 10.1134/S1063782616070137

By:

Kyuregyan, A.;
Gorbatyuk, A.;
Ivanov, B.

Publication type:

Article

On current spreading in solar cells: a two-parameter tube model.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162

By:

Mintairov, M.;
Evstropov, V.;
Mintairov, S.;
Timoshina, N.;
Shvarts, M.;
Kalyuzhnyy, N.

Publication type:

Article

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 976, doi. 10.1134/S1063782616070198

By:

Parkhomenko, Ya.;
Dement'ev, P.;
Moiseev, K.

Publication type:

Article

Nonlinear optical response of planar and spherical CdSe nanocrystals.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 947, doi. 10.1134/S1063782616070228

By:

Selyukov, A.;
Isaev, A.;
Vitukhnovsky, A.;
Litvak, V.;
Katsaba, A.;
Korshunov, V.;
Vasiliev, R.

Publication type:

Article

Technique for forming ITO films with a controlled refractive index.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 984, doi. 10.1134/S1063782616070150

By:

Markov, L.;
Smirnova, I.;
Pavluchenko, A.;
Kukushkin, M.;
Zakheim, D.;
Pavlov, S.

Publication type:

Article

Solubility of oxygen in CdS single crystals and their physicochemical properties.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 849, doi. 10.1134/S1063782616070174

By:

Morozova, N.;
Kanakhin, A.;
Shnitnikov, A.

Publication type:

Article

Electrochemical lithiation of silicon with varied crystallographic orientation.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 963, doi. 10.1134/S1063782616070022

By:

Astrova, E.;
Rumyantsev, A.;
Li, G.;
Nashchekin, A.;
Kazantsev, D.;
Ber, B.;
Zhdanov, V.

Publication type:

Article