Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 7
Results: 25
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium.
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- Semiconductors, 2016, v. 50, n. 7, p. 853, doi. 10.1134/S106378261607023X
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Features of conductivity mechanisms in heavily doped compensated VTiFeSb Semiconductor.
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- Semiconductors, 2016, v. 50, n. 7, p. 860, doi. 10.1134/S1063782616070204
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Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.
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- Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113
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Electron exchange between tin impurity U centers in PbSSe alloys.
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- Semiconductors, 2016, v. 50, n. 7, p. 876, doi. 10.1134/S1063782616070149
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Field dependence of the electron drift velocity along the hexagonal axis of 4 H-SiC.
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- Semiconductors, 2016, v. 50, n. 7, p. 883, doi. 10.1134/S106378261607006X
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Effect of coulomb correlations on luminescence and absorption in compensated semiconductors.
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- Semiconductors, 2016, v. 50, n. 7, p. 888, doi. 10.1134/S1063782616070034
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Local emission spectroscopy of surface micrograins in AB semiconductors.
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- Semiconductors, 2016, v. 50, n. 7, p. 894, doi. 10.1134/S1063782616070265
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Indium nanowires at the silicon surface.
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- Semiconductors, 2016, v. 50, n. 7, p. 901, doi. 10.1134/S1063782616070095
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Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields.
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- Semiconductors, 2016, v. 50, n. 7, p. 904, doi. 10.1134/S1063782616070125
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Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth.
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- Semiconductors, 2016, v. 50, n. 7, p. 910, doi. 10.1134/S1063782616070216
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Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure.
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- Semiconductors, 2016, v. 50, n. 7, p. 915, doi. 10.1134/S1063782616070253
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Semi-insulating 4 H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films.
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- Semiconductors, 2016, v. 50, n. 7, p. 920, doi. 10.1134/S1063782616070071
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Study of deep levels in GaAs p-i-n structures.
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- Semiconductors, 2016, v. 50, n. 7, p. 924, doi. 10.1134/S1063782616070241
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Photovoltage and photocurrent in Pd-oxide-InP structures in a hydrogen medium.
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- Semiconductors, 2016, v. 50, n. 7, p. 929, doi. 10.1134/S1063782616070058
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Optical properties of p-i-n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.
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- Semiconductors, 2016, v. 50, n. 7, p. 935, doi. 10.1134/S1063782616070101
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Voltage oscillations in the case of the switching effect in thin layers of Ge-Sb-Te chalcogenides in the current mode.
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- Semiconductors, 2016, v. 50, n. 7, p. 941, doi. 10.1134/S1063782616070046
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Nonlinear optical response of planar and spherical CdSe nanocrystals.
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- Semiconductors, 2016, v. 50, n. 7, p. 947, doi. 10.1134/S1063782616070228
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Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6 H-SiC (000 $$\bar 1$$) in vacuum.
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- Semiconductors, 2016, v. 50, n. 7, p. 951, doi. 10.1134/S1063782616070083
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Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT-MOS transistors.
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- Semiconductors, 2016, v. 50, n. 7, p. 957, doi. 10.1134/S1063782616070137
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Electrochemical lithiation of silicon with varied crystallographic orientation.
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- Semiconductors, 2016, v. 50, n. 7, p. 963, doi. 10.1134/S1063782616070022
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On current spreading in solar cells: a two-parameter tube model.
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- Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162
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Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy.
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- Semiconductors, 2016, v. 50, n. 7, p. 976, doi. 10.1134/S1063782616070198
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Chloride epitaxy of β-GaO layers grown on c-sapphire substrates.
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- Semiconductors, 2016, v. 50, n. 7, p. 980, doi. 10.1134/S1063782616070186
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Technique for forming ITO films with a controlled refractive index.
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- Semiconductors, 2016, v. 50, n. 7, p. 984, doi. 10.1134/S1063782616070150
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Solubility of oxygen in CdS single crystals and their physicochemical properties.
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- Semiconductors, 2016, v. 50, n. 7, p. 849, doi. 10.1134/S1063782616070174
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