Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 6
Results: 25
1
2
Optical properties of InSe thin films.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 715, doi. 10.1134/S1063782616060026
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- Publication type:
- Article
3
Anomalous thermoelectric power in HgInTe crystals.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 719, doi. 10.1134/S1063782616060075
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- Publication type:
- Article
4
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga).
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 722, doi. 10.1134/S1063782616060191
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- Publication type:
- Article
5
Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 735, doi. 10.1134/S1063782616060063
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- Publication type:
- Article
6
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 741, doi. 10.1134/S1063782616060208
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- Publication type:
- Article
7
Radiation-induced bistable centers with deep levels in silicon n- p structures.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 751, doi. 10.1134/S1063782616060130
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- Publication type:
- Article
8
On the local injection of emitted electrons into micrograins on the surface of A-B semiconductors.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 756, doi. 10.1134/S1063782616060257
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- Publication type:
- Article
9
On the ohmicity of Schottky contacts.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 761, doi. 10.1134/S106378261606021X
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- Publication type:
- Article
10
Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 769, doi. 10.1134/S1063782616060105
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- Publication type:
- Article
11
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 775, doi. 10.1134/S1063782616060154
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- Publication type:
- Article
12
Features of high-temperature electroluminescence in an LED n-GaSb/ n-InGaAsSb/ p-AlGaAsSb heterostructure with high potential barriers.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 778, doi. 10.1134/S1063782616060038
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- Publication type:
- Article
13
Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 785, doi. 10.1134/S1063782616060245
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- Publication type:
- Article
14
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 791, doi. 10.1134/S1063782616060099
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- Publication type:
- Article
15
Inter atomic force constants of binary and ternary tetrahedral semiconductors.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 795, doi. 10.1134/S106378261606018X
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- Publication type:
- Article
16
Substitutional impurity in single-layer graphene: The Koster-Slater and Anderson models.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 801, doi. 10.1134/S106378261606004X
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- Publication type:
- Article
17
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 810, doi. 10.1134/S1063782616060269
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- Publication type:
- Article
18
Experimental determination of the derivative of the current-voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 815, doi. 10.1134/S1063782616060129
- By:
- Publication type:
- Article
19
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 819, doi. 10.1134/S1063782616060087
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- Publication type:
- Article
20
Method for increasing the carrier mobility in the channel of the 4 H-SiC MOSFET.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 824, doi. 10.1134/S1063782616060178
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- Publication type:
- Article
21
On the photon annealing of silicon-implanted gallium-nitride layers.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 832, doi. 10.1134/S1063782616060221
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- Publication type:
- Article
22
The modification of BaCeZrYO with copper oxide: Effect on the structural and transport properties.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 839, doi. 10.1134/S1063782616060142
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- Publication type:
- Article
23
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 844, doi. 10.1134/S1063782616060166
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- Publication type:
- Article
24
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20-25, 2015).
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 705, doi. 10.1134/S1063782616060117
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- Publication type:
- Article
25
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect.
- Published in:
- Semiconductors, 2016, v. 50, n. 6, p. 828, doi. 10.1134/S1063782616060051
- By:
- Publication type:
- Article