Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 6
Results: 25
Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.
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- Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233
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Optical properties of InSe thin films.
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- Semiconductors, 2016, v. 50, n. 6, p. 715, doi. 10.1134/S1063782616060026
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Anomalous thermoelectric power in HgInTe crystals.
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- Semiconductors, 2016, v. 50, n. 6, p. 719, doi. 10.1134/S1063782616060075
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Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga).
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- Semiconductors, 2016, v. 50, n. 6, p. 722, doi. 10.1134/S1063782616060191
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Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment.
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- Semiconductors, 2016, v. 50, n. 6, p. 735, doi. 10.1134/S1063782616060063
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On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation.
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- Semiconductors, 2016, v. 50, n. 6, p. 741, doi. 10.1134/S1063782616060208
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Radiation-induced bistable centers with deep levels in silicon n- p structures.
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- Semiconductors, 2016, v. 50, n. 6, p. 751, doi. 10.1134/S1063782616060130
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On the local injection of emitted electrons into micrograins on the surface of A-B semiconductors.
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- Semiconductors, 2016, v. 50, n. 6, p. 756, doi. 10.1134/S1063782616060257
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On the ohmicity of Schottky contacts.
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- Semiconductors, 2016, v. 50, n. 6, p. 761, doi. 10.1134/S106378261606021X
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Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field.
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- Semiconductors, 2016, v. 50, n. 6, p. 769, doi. 10.1134/S1063782616060105
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Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium.
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- Semiconductors, 2016, v. 50, n. 6, p. 775, doi. 10.1134/S1063782616060154
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Features of high-temperature electroluminescence in an LED n-GaSb/ n-InGaAsSb/ p-AlGaAsSb heterostructure with high potential barriers.
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- Semiconductors, 2016, v. 50, n. 6, p. 778, doi. 10.1134/S1063782616060038
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Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields.
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- Semiconductors, 2016, v. 50, n. 6, p. 785, doi. 10.1134/S1063782616060245
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Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen.
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- Semiconductors, 2016, v. 50, n. 6, p. 791, doi. 10.1134/S1063782616060099
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Inter atomic force constants of binary and ternary tetrahedral semiconductors.
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- Semiconductors, 2016, v. 50, n. 6, p. 795, doi. 10.1134/S106378261606018X
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Substitutional impurity in single-layer graphene: The Koster-Slater and Anderson models.
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- Semiconductors, 2016, v. 50, n. 6, p. 801, doi. 10.1134/S106378261606004X
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Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes.
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- Semiconductors, 2016, v. 50, n. 6, p. 810, doi. 10.1134/S1063782616060269
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Experimental determination of the derivative of the current-voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis.
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- Semiconductors, 2016, v. 50, n. 6, p. 815, doi. 10.1134/S1063782616060129
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Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass.
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- Semiconductors, 2016, v. 50, n. 6, p. 819, doi. 10.1134/S1063782616060087
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Method for increasing the carrier mobility in the channel of the 4 H-SiC MOSFET.
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- Semiconductors, 2016, v. 50, n. 6, p. 824, doi. 10.1134/S1063782616060178
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Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect.
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- Semiconductors, 2016, v. 50, n. 6, p. 828, doi. 10.1134/S1063782616060051
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On the photon annealing of silicon-implanted gallium-nitride layers.
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- Semiconductors, 2016, v. 50, n. 6, p. 832, doi. 10.1134/S1063782616060221
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The modification of BaCeZrYO with copper oxide: Effect on the structural and transport properties.
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- Semiconductors, 2016, v. 50, n. 6, p. 839, doi. 10.1134/S1063782616060142
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Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids.
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- Semiconductors, 2016, v. 50, n. 6, p. 844, doi. 10.1134/S1063782616060166
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Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20-25, 2015).
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- Semiconductors, 2016, v. 50, n. 6, p. 705, doi. 10.1134/S1063782616060117
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