Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment.
- Published in:
- Semiconductors, 2016, v. 50, n. 4, p. 435, doi. 10.1134/S1063782616040187
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- Article
Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 4
Results: 24
1
2
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO:H (0 < x < 2) with time-modulated dc magnetron plasma.
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- Semiconductors, 2016, v. 50, n. 4, p. 530, doi. 10.1134/S1063782616040230
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- Article
3
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy.
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- Semiconductors, 2016, v. 50, n. 4, p. 541, doi. 10.1134/S1063782616040217
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- Article
4
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in A-N nitrides.
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- Semiconductors, 2016, v. 50, n. 4, p. 432, doi. 10.1134/S1063782616040084
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- Article
5
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime.
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- Semiconductors, 2016, v. 50, n. 4, p. 466, doi. 10.1134/S1063782616040060
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- Article
6
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons.
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- Semiconductors, 2016, v. 50, n. 4, p. 453, doi. 10.1134/S106378261604014X
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- Article
7
Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.
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- Semiconductors, 2016, v. 50, n. 4, p. 457, doi. 10.1134/S1063782616040072
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- Article
8
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation.
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- Semiconductors, 2016, v. 50, n. 4, p. 440, doi. 10.1134/S1063782616040023
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- Article
9
On the thermoelectric properties and band gap of silicon-germanium alloys in the high-temperature region.
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- Semiconductors, 2016, v. 50, n. 4, p. 447, doi. 10.1134/S1063782616040126
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- Article
10
Features of photoinduced magnetism in some yttrium-iron-garnet single crystals.
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- Semiconductors, 2016, v. 50, n. 4, p. 449, doi. 10.1134/S1063782616040254
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- Article
11
Impact ionization in nonuniformly heated silicon p- n- n and n- p- p structures.
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- Semiconductors, 2016, v. 50, n. 4, p. 462, doi. 10.1134/S1063782616040175
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- Article
12
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire.
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- Semiconductors, 2016, v. 50, n. 4, p. 478, doi. 10.1134/S1063782616040102
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- Article
13
Gaussian approximation of the spectral dependence of the absorption spectrum in polymer semiconductors.
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- Semiconductors, 2016, v. 50, n. 4, p. 482, doi. 10.1134/S1063782616040151
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- Article
14
'Dimensional' effect due to the matrix isolation of luminescent composites of polyphenylquinolines.
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- Semiconductors, 2016, v. 50, n. 4, p. 487, doi. 10.1134/S1063782616040035
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- Article
15
Polytype inclusions and polytype stability in silicon-carbide crystals.
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- Semiconductors, 2016, v. 50, n. 4, p. 494, doi. 10.1134/S1063782616040059
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- Article
16
Prediction of the stability and electronic properties of carbon nanotori synthesized by a high-voltage pulsed discharge in ethanol vapor.
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- Semiconductors, 2016, v. 50, n. 4, p. 502, doi. 10.1134/S1063782616040114
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- Article
17
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se thin-film solar cells.
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- Semiconductors, 2016, v. 50, n. 4, p. 508, doi. 10.1134/S1063782616040138
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- Article
18
Optical and structural properties of CuZnSnS thin films obtained by pulsed laser deposition in a HS atmosphere with subsequent annealing in a N atmosphere.
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- Semiconductors, 2016, v. 50, n. 4, p. 549, doi. 10.1134/S1063782616040229
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- Article
19
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 4, p. 517, doi. 10.1134/S1063782616040163
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- Article
20
Simulation of the real efficiencies of high-efficiency silicon solar cells.
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- Semiconductors, 2016, v. 50, n. 4, p. 523, doi. 10.1134/S1063782616040205
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- Article
21
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy.
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- Semiconductors, 2016, v. 50, n. 4, p. 555, doi. 10.1134/S1063782616040047
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- Article
22
Specific features of doping with antimony during the ion-beam crystallization of silicon.
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- Semiconductors, 2016, v. 50, n. 4, p. 545, doi. 10.1134/S1063782616040199
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- Article
23
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode.
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- Semiconductors, 2016, v. 50, n. 4, p. 559, doi. 10.1134/S1063782616040242
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- Article
24
Electronic structure of Pt-substituted clathrate silicides BaPtSi( x = 4-6).
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- Semiconductors, 2016, v. 50, n. 4, p. 427, doi. 10.1134/S1063782616040096
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- Article