Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 3

Results: 23

On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4 H-SiC.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 289, doi. 10.1134/S1063782616030143
By:
- Kyuregyan, A.
Publication type:
Article
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 295, doi. 10.1134/S106378261603009X
By:
- Hasanov, Kh.;
- Huseynov, J.;
- Dadashova, V.;
- Aliyev, F.
Publication type:
Article
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 299, doi. 10.1134/S1063782616030192
By:
- Poklonski, N.;
- Vyrko, S.;
- Kovalev, A.;
- Zabrodskii, A.
Publication type:
Article
Deep Centers at the Interface in InGaTe/InAs and InTe/InAs Heterostructures.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 309, doi. 10.1134/S1063782616030076
By:
- Domashevskaya, E.;
- Mikhailyuk, E.;
- Prokopova, T.;
- Bezryadin, N.
Publication type:
Article
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 314, doi. 10.1134/S1063782616030180
By:
- Peleshchak, R.;
- Lazurchak, I.;
- Kuzyk, O.;
- Dan'kiv, O.;
- Zegrya, G.
Publication type:
Article
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance-Voltage Profiling.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 320, doi. 10.1134/S1063782616030234
By:
- Yakovlev, G.;
- Frolov, D.;
- Zubkova, A.;
- Levina, E.;
- Zubkov, V.;
- Solomonov, A.;
- Sterlyadkin, O.;
- Sorokin, S.
Publication type:
Article
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 326, doi. 10.1134/S1063782616030222
By:
- Tarasova, E.;
- Khananova, A.;
- Obolensky, S.;
- Zemlyakov, V.;
- Sveshnikov, Yu.;
- Egorkin, V.;
- Ivanov, V.;
- Medvedev, G.;
- Smotrin, D.
Publication type:
Article
Electrical and Photoelectric Properties of the TiN/ p-InSe Heterojunction.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 334, doi. 10.1134/S1063782616030167
By:
- Orletsky, I.;
- Ilashchuk, M.;
- Brus, V.;
- Marianchuk, P.;
- Solovan, M.;
- Kovalyuk, Z.
Publication type:
Article
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 339, doi. 10.1134/S1063782616030179
By:
- Parshin, A.;
- Kushchenkov, S.;
- Pchelyakov, O.;
- Mikhlin, Yu.
Publication type:
Article
Epitaxially Grown Monoisotopic Si, Ge, and SiGe Alloy Layers: Production and Some Properties.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 345, doi. 10.1134/S1063782616030064
By:
- Detochenko, A.;
- Denisov, S.;
- Drozdov, M.;
- Mashin, A.;
- Gavva, V.;
- Bulanov, A.;
- Nezhdanov, A.;
- Ezhevskii, A.;
- Stepikhova, M.;
- Chalkov, V.;
- Trushin, V.;
- Shengurov, D.;
- Shengurov, V.;
- Abrosimov, N.;
- Riemann, H.
Publication type:
Article
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 349, doi. 10.1134/S1063782616030209
By:
- Popov, V.
Publication type:
Article
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 352, doi. 10.1134/S106378261603012X
By:
- Klochko, N.;
- Klepikova, K.;
- Kopach, V.;
- Khrypunov, G.;
- Myagchenko, Yu.;
- Melnychuk, E.;
- Lyubov, V.;
- Kopach, A.
Publication type:
Article
Photoluminescence and Confinement of Excitons in Disordered Porous Films.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 364, doi. 10.1134/S1063782616030039
By:
- Bondar, N.;
- Brodin, M.;
- Brodin, A.;
- Matveevskaya, N.
Publication type:
Article
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 372, doi. 10.1134/S1063782616030040
By:
- Chubenko, E.;
- Redko, S.;
- Sherstnyov, A.;
- Petrovich, V.;
- Kotov, D.;
- Bondarenko, V.
Publication type:
Article
Model of Adsorption on Amorphous Graphene.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 377, doi. 10.1134/S1063782616030052
By:
- Davydov, S.
Publication type:
Article
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 418, doi. 10.1134/S1063782616030118
By:
- Ken, O.;
- Levitskii, V.;
- Yavsin, D.;
- Gurevich, S.;
- Davydov, V.;
- Sreseli, O.
Publication type:
Article
Model Development for Current-Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 384, doi. 10.1134/S1063782616030210
By:
- Swain, R.;
- Jena, K.;
- Lenka, T.
Publication type:
Article
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 394, doi. 10.1134/S1063782616030106
By:
- Gusev, A.;
- Lyubutin, S.;
- Rukin, S.;
- Tsyranov, S.
Publication type:
Article
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 404, doi. 10.1134/S1063782616030155
By:
- Levinshtein, M.;
- Mnatsakanov, T.;
- Yurkov, S.;
- Tandoev, A.;
- Ryu, Sei-Hyung;
- Palmour, J.
Publication type:
Article
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 411, doi. 10.1134/S1063782616030246
By:
- Yugov, A.;
- Malahov, S.;
- Donskov, A.;
- Duhnovskii, M.;
- Knyazev, S.;
- Kozlova, Yu.;
- Yugova, T.;
- Belogorokhov, I.
Publication type:
Article
Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 415, doi. 10.1134/S1063782616030027
By:
- Belyaev, A.;
- Antipov, V.;
- Rubets, V.
Publication type:
Article
Microdisk Injection Lasers for the 1.27-μm Spectral Range.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131
By:
- Kryzhanovskaya, N.;
- Maximov, M.;
- Blokhin, S.;
- Bobrov, M.;
- Kulagina, M.;
- Troshkov, S.;
- Zadiranov, Yu.;
- Lipovskii, A.;
- Moiseev, E.;
- Kudashova, Yu.;
- Livshits, D.;
- Ustinov, V.;
- Zhukov, A.
Publication type:
Article
Ab Initio Calculations of Phonon Dispersion in ZnGaSe.
Published in:
Semiconductors, 2016, v. 50, n. 3, p. 285, doi. 10.1134/S1063782616030088
By:
- Dzhakhangirli, Z.;
- Kerimova, T.;
- Abdullaev, N.
Publication type:
Article