Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 3

Results: 23

Electrical and Photoelectric Properties of the TiN/ p-InSe Heterojunction.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 334, doi. 10.1134/S1063782616030167

By:

Orletsky, I.;
Ilashchuk, M.;
Brus, V.;
Marianchuk, P.;
Solovan, M.;
Kovalyuk, Z.

Publication type:

Article

Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 339, doi. 10.1134/S1063782616030179

By:

Parshin, A.;
Kushchenkov, S.;
Pchelyakov, O.;
Mikhlin, Yu.

Publication type:

Article

Epitaxially Grown Monoisotopic Si, Ge, and SiGe Alloy Layers: Production and Some Properties.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 345, doi. 10.1134/S1063782616030064

By:

Detochenko, A.;
Denisov, S.;
Drozdov, M.;
Mashin, A.;
Gavva, V.;
Bulanov, A.;
Nezhdanov, A.;
Ezhevskii, A.;
Stepikhova, M.;
Chalkov, V.;
Trushin, V.;
Shengurov, D.;
Shengurov, V.;
Abrosimov, N.;
Riemann, H.

Publication type:

Article

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 326, doi. 10.1134/S1063782616030222

By:

Tarasova, E.;
Khananova, A.;
Obolensky, S.;
Zemlyakov, V.;
Sveshnikov, Yu.;
Egorkin, V.;
Ivanov, V.;
Medvedev, G.;
Smotrin, D.

Publication type:

Article

On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4 H-SiC.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 289, doi. 10.1134/S1063782616030143

By:

Kyuregyan, A.

Publication type:

Article

Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 295, doi. 10.1134/S106378261603009X

By:

Hasanov, Kh.;
Huseynov, J.;
Dadashova, V.;
Aliyev, F.

Publication type:

Article

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 299, doi. 10.1134/S1063782616030192

By:

Poklonski, N.;
Vyrko, S.;
Kovalev, A.;
Zabrodskii, A.

Publication type:

Article

Deep Centers at the Interface in InGaTe/InAs and InTe/InAs Heterostructures.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 309, doi. 10.1134/S1063782616030076

By:

Domashevskaya, E.;
Mikhailyuk, E.;
Prokopova, T.;
Bezryadin, N.

Publication type:

Article

Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 314, doi. 10.1134/S1063782616030180

By:

Peleshchak, R.;
Lazurchak, I.;
Kuzyk, O.;
Dan'kiv, O.;
Zegrya, G.

Publication type:

Article

Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance-Voltage Profiling.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 320, doi. 10.1134/S1063782616030234

By:

Yakovlev, G.;
Frolov, D.;
Zubkova, A.;
Levina, E.;
Zubkov, V.;
Solomonov, A.;
Sterlyadkin, O.;
Sorokin, S.

Publication type:

Article

Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 349, doi. 10.1134/S1063782616030209

By:

Popov, V.

Publication type:

Article

On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 352, doi. 10.1134/S106378261603012X

By:

Klochko, N.;
Klepikova, K.;
Kopach, V.;
Khrypunov, G.;
Myagchenko, Yu.;
Melnychuk, E.;
Lyubov, V.;
Kopach, A.

Publication type:

Article

Photoluminescence and Confinement of Excitons in Disordered Porous Films.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 364, doi. 10.1134/S1063782616030039

By:

Bondar, N.;
Brodin, M.;
Brodin, A.;
Matveevskaya, N.

Publication type:

Article

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 372, doi. 10.1134/S1063782616030040

By:

Chubenko, E.;
Redko, S.;
Sherstnyov, A.;
Petrovich, V.;
Kotov, D.;
Bondarenko, V.

Publication type:

Article

Model Development for Current-Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 384, doi. 10.1134/S1063782616030210

By:

Swain, R.;
Jena, K.;
Lenka, T.

Publication type:

Article

Microdisk Injection Lasers for the 1.27-μm Spectral Range.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131

By:

Kryzhanovskaya, N.;
Maximov, M.;
Blokhin, S.;
Bobrov, M.;
Kulagina, M.;
Troshkov, S.;
Zadiranov, Yu.;
Lipovskii, A.;
Moiseev, E.;
Kudashova, Yu.;
Livshits, D.;
Ustinov, V.;
Zhukov, A.

Publication type:

Article

Model of Adsorption on Amorphous Graphene.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 377, doi. 10.1134/S1063782616030052

By:

Davydov, S.

Publication type:

Article

High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 394, doi. 10.1134/S1063782616030106

By:

Gusev, A.;
Lyubutin, S.;
Rukin, S.;
Tsyranov, S.

Publication type:

Article

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 404, doi. 10.1134/S1063782616030155

By:

Levinshtein, M.;
Mnatsakanov, T.;
Yurkov, S.;
Tandoev, A.;
Ryu, Sei-Hyung;
Palmour, J.

Publication type:

Article

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 411, doi. 10.1134/S1063782616030246

By:

Yugov, A.;
Malahov, S.;
Donskov, A.;
Duhnovskii, M.;
Knyazev, S.;
Kozlova, Yu.;
Yugova, T.;
Belogorokhov, I.

Publication type:

Article

Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 418, doi. 10.1134/S1063782616030118

By:

Ken, O.;
Levitskii, V.;
Yavsin, D.;
Gurevich, S.;
Davydov, V.;
Sreseli, O.

Publication type:

Article

Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 415, doi. 10.1134/S1063782616030027

By:

Belyaev, A.;
Antipov, V.;
Rubets, V.

Publication type:

Article

Ab Initio Calculations of Phonon Dispersion in ZnGaSe.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 285, doi. 10.1134/S1063782616030088

By:

Dzhakhangirli, Z.;
Kerimova, T.;
Abdullaev, N.

Publication type:

Article