Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 2

Results: 26

Compositional dependence of the band gap of (CuInS) · (FeInS) alloys.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 154, doi. 10.1134/S1063782616020068

By:

Bodnar, I.;
Victorov, I.;
Jaafar, M.;
Pauliukavets, S.

Publication type:

Article

Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 191, doi. 10.1134/S1063782616020020

By:

Aleksandrov, I.;
Zhuravlev, K.;
Mansurov, V.

Publication type:

Article

Photoluminescence properties of thallium-containing GeSe and GeSe vitreous semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 158, doi. 10.1134/S1063782616020044

By:

Babaev, A.

Publication type:

Article

On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 162, doi. 10.1134/S1063782616020202

By:

Rasulov, V.;
Rasulov, R.

Publication type:

Article

On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 180, doi. 10.1134/S1063782616020214

By:

Ryabtsev, S.;
Chuvenkova, O.;
Kannykin, S.;
Popov, A.;
Ryabtseva, N.;
Voischev, S.;
Turishchev, S.;
Domashevskaya, E.

Publication type:

Article

Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 185, doi. 10.1134/S1063782616020123

By:

Khabibullin, R.;
Yachmenev, A.;
Lavrukhin, D.;
Ponomarev, D.;
Bugayev, A.;
Maltsev, P.

Publication type:

Article

Halogen adsorption at an As-stabilized β2-GaAs (001)-(2 × 4) surface.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 171, doi. 10.1134/S1063782616020056

By:

Bakulin, A.;
Kulkova, S.

Publication type:

Article

Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 167, doi. 10.1134/S106378261602007X

By:

Dunaev, A.;
Murin, D.;
Pivovarenok, S.

Publication type:

Article

Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081

By:

Galiev, G.;
Klimov, E.;
Grekhov, M.;
Pushkarev, S.;
Lavrukhin, D.;
Maltsev, P.

Publication type:

Article

GaAs structures with a gate dielectric based on aluminum-oxide layers.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 204, doi. 10.1134/S106378261602010X

By:

Kalentyeva, I.;
Vikhrova, O.;
Zdoroveyshchev, A.;
Danilov, Yu.;
Kudrin, A.

Publication type:

Article

Si:Si LEDs with room-temperature dislocation-related luminescence.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 240, doi. 10.1134/S1063782616020238

By:

Sobolev, N.;
Kalyadin, A.;
Konovalov, M.;
Aruev, P.;
Zabrodskiy, V.;
Shek, E.;
Shtel'makh, K.;
Mikhaylov, A.;
Tetel'baum, D.

Publication type:

Article

Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 208, doi. 10.1134/S1063782616020160

By:

Mynbaev, K.;
Zablotsky, S.;
Shilyaev, A.;
Bazhenov, N.;
Yakushev, M.;
Marin, D.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Effect of transverse electric field on the longitudinal current-voltage characteristic of graphene superlattice.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 217, doi. 10.1134/S1063782616020147

By:

Kryuchkov, S.;
Kukhar', E.

Publication type:

Article

Laser-assisted simulation of transient radiation effects in heterostructure components based on AB semiconductor compounds.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 222, doi. 10.1134/S1063782616020093

By:

Gromov, D.;
Maltsev, P.;
Polevich, S.

Publication type:

Article

PbEuTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4-5 μm.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 228, doi. 10.1134/S1063782616020172

By:

Pashkeev, D.;
Selivanov, Yu.;
Chizhevskii, E.;
Zasavitskiy, I.

Publication type:

Article

Field-effect transistor with 2D carrier systems in the gate and channel.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 235, doi. 10.1134/S1063782616020184

By:

Popov, V.

Publication type:

Article

Composition and optical properties of amorphous a-SiO:H films with silicon nanoclusters.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 212, doi. 10.1134/S1063782616020251

By:

Terekhov, V.;
Terukov, E.;
Undalov, Yu.;
Parinova, E.;
Spirin, D.;
Seredin, P.;
Minakov, D.;
Domashevskaya, E.

Publication type:

Article

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263

By:

Tikhomirov, V.;
Zemlyakov, V.;
Volkov, V.;
Parnes, Ya.;
Vyuginov, V.;
Lundin, W.;
Sakharov, A.;
Zavarin, E.;
Tsatsulnikov, A.;
Cherkashin, N.;
Mizerov, M.;
Ustinov, V.

Publication type:

Article

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 249, doi. 10.1134/S1063782616020111

By:

Kalyadin, A.;
Sobolev, N.;
Strel'chuk, A.;
Aruev, P.;
Zabrodskiy, V.;
Shek, E.

Publication type:

Article

Electroluminescence properties of LEDs based on electron-irradiated p-Si.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 252, doi. 10.1134/S106378261602024X

By:

Sobolev, N.;
Shtel'makh, K.;
Kalyadin, A.;
Aruev, P.;
Zabrodskiy, V.;
Shek, E.;
Yang, D.

Publication type:

Article

Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 257, doi. 10.1134/S1063782616020226

By:

Sachenko, A.;
Kryuchenko, Yu.;
Kostylyov, V.;
Sokolovskyi, I.;
Abramov, A.;
Bobyl, A.;
Panaiotti, I.;
Terukov, E.

Publication type:

Article

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 261, doi. 10.1134/S1063782616020159

By:

Lobanov, D.;
Novikov, A.;
Andreev, B.;
Bushuykin, P.;
Yunin, P.;
Skorohodov, E.;
Krasilnikova, L.

Publication type:

Article

Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic AlO matrices.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 266, doi. 10.1134/S1063782616020275

By:

Valeev, R.;
Petukhov, D.;
Chukavin, A.;
Beltiukov, A.

Publication type:

Article

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 271, doi. 10.1134/S1063782616020135

By:

Korolev, D.;
Mikhaylov, A.;
Belov, A.;
Vasiliev, V.;
Guseinov, D.;
Okulich, E.;
Shemukhin, A.;
Surodin, S.;
Nikolitchev, D.;
Nezhdanov, A.;
Pirogov, A.;
Pavlov, D.;
Tetelbaum, D.

Publication type:

Article

Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 276, doi. 10.1134/S1063782616020032

By:

Astrova, E.;
Li, G.;
Rumyantsev, A.;
Zhdanov, V.

Publication type:

Article

On the theory of the two-photon linear photovoltaic effect in n-GaP.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 145, doi. 10.1134/S1063782616020196

By:

Rasulov, V.;
Rasulov, R.

Publication type:

Article