Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 12

Results: 27

On a new method of heterojunction formation in III-V nanowires.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1566, doi. 10.1134/S1063782616120198

By:

Sibirev, N.;
Koryakin, A.;
Dubrovskii, V.

Publication type:

Article

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1569, doi. 10.1134/S1063782616120204

By:

Surovegina, E.;
Demidov, E.;
Drozdov, M.;
Murel, A.;
Khrykin, O.;
Shashkin, V.;
Lobaev, M.;
Gorbachev, A.;
Viharev, A.;
Bogdanov, S.;
Isaev, V.;
Muchnikov, A.;
Chernov, V.;
Radishchev, D.;
Batler, D.

Publication type:

Article

Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216

By:

Tarasova, E.;
Obolenskaya, E.;
Hananova, A.;
Obolensky, S.;
Zemliakov, V.;
Egorkin, V.;
Nezhenzev, A.;
Saharov, A.;
Zazul'nokov, A.;
Lundin, V.;
Zavarin, E.;
Medvedev, G.

Publication type:

Article

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1579, doi. 10.1134/S1063782616120149

By:

Obolenskaya, E.;
Tarasova, E.;
Churin, A.;
Obolensky, S.;
Kozlov, V.

Publication type:

Article

Strained multilayer structures with pseudomorphic GeSiSn layers.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1584, doi. 10.1134/S106378261612023X

By:

Timofeev, V.;
Nikiforov, A.;
Tuktamyshev, A.;
Yesin, M.;
Mashanov, V.;
Gutakovskii, A.;
Baidakova, N.

Publication type:

Article

Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1589, doi. 10.1134/S1063782616120228

By:

Tikhov, S.;
Gorshkov, O.;
Koryazhkina, M.;
Kasatkin, A.;
Antonov, I.;
Vihrova, O.;
Morozov, A.

Publication type:

Article

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253

By:

Ushanov, V.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1600, doi. 10.1134/S106378261612006X

By:

Fedorov, G.;
Stepanova, T.;
Gazaliev, A.;
Gaiduchenko, I.;
Kaurova, N.;
Voronov, B.;
Goltzman, G.

Publication type:

Article

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1604, doi. 10.1134/S1063782616120277

By:

Yablonsky, A.;
Zhukavin, R.;
Bekin, N.;
Novikov, A.;
Yurasov, D.;
Shaleev, M.

Publication type:

Article

Polariton condensate coherence in planar microcavities in a magnetic field.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1609, doi. 10.1134/S1063782616120058

By:

Chernenko, A.;
Rahimi-lman, A.;
Fischer, J.;
Amthor, M.;
Schneider, C.;
Reitzenstein, S.;
Forchel, A.;
Hoefling, S.

Publication type:

Article

Electrical and photoelectric properties of Si-based metal-insulator-semiconductor structures with Au nanoparticles at the insulator-semiconductor interface.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1614, doi. 10.1134/S1063782616120095

By:

Koryazhkina, M.;
Tikhov, S.;
Gorshkov, O.;
Kasatkin, A.;
Antonov, I.

Publication type:

Article

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186

By:

Shtrom, I.;
Bouravleuv, A.;
Samsonenko, Yu.;
Khrebtov, A.;
Soshnikov, I.;
Reznik, R.;
Cirlin, G.;
Dhaka, V.;
Perros, A.;
Lipsanen, H.

Publication type:

Article

Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1622, doi. 10.1134/S1063782616120289

By:

Yunin, P.;
Drozdov, Yu.;
Chernov, V.;
Isaev, V.;
Bogdanov, S.;
Muchnikov, A.

Publication type:

Article

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1626, doi. 10.1134/S1063782616120265

By:

Varavin, V.;
Vasilyev, V.;
Guzev, A.;
Dvoretsky, S.;
Kovchavtsev, A.;
Marin, D.;
Sabinina, I.;
Sidorov, Yu.;
Sidorov, G.;
Tsarenko, A.;
Yakushev, M.

Publication type:

Article

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1630, doi. 10.1134/S1063782616120137

By:

Novikov, A.;
Shaleev, M.;
Yurasov, D.;
Yunin, P.

Publication type:

Article

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1635, doi. 10.1134/S1063782616120083

By:

Ishchenko, D.;
Klimov, A.;
Shumsky, V.;
Epov, V.

Publication type:

Article

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1641, doi. 10.1134/S1063782616120071

By:

Gudina, S.;
Arapov, Yu.;
Saveliev, A.;
Neverov, V.;
Podgornykh, S.;
Shelushinina, N.;
Yakunin, M.;
Vasil'evskii, I.;
Vinichenko, A.

Publication type:

Article

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1651, doi. 10.1134/S1063782616120174

By:

Rumyantsev, V.;
Fadeev, M.;
Morozov, S.;
Dubinov, A.;
Kudryavtsev, K.;
Kadykov, A.;
Tuzov, I.;
Dvoretskii, S.;
Mikhailov, N.;
Gavrilenko, V.;
Teppe, F.

Publication type:

Article

Polarization of the photoluminescence of quantum dots incorporated into quantum wires.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1647, doi. 10.1134/S1063782616120150

By:

Platonov, A.;
Kochereshko, V.;
Kats, V.;
Cirlin, G.;
Bouravleuv, A.;
Avdoshina, D.;
Delga, A.;
Besombes, L.;
Mariette, H.

Publication type:

Article

Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1684, doi. 10.1134/S1063782616120022

By:

Akimov, A.;
Klimov, A.;
Morozov, S.;
Suprun, S.;
Epov, V.;
Ikonnikov, A.;
Fadeev, M.;
Rumyantsev, V.

Publication type:

Article

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1691, doi. 10.1134/S1063782616120034

By:

Aleshkin, V.;
Gavrilenko, L.;
Gaponova, D.;
Krasil'nik, Z.;
Kryzhkov, D.

Publication type:

Article

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1657, doi. 10.1134/S1063782616120046

By:

Baidakova, N.;
Novikov, A.;
Shaleev, M.;
Yurasov, D.;
Morozova, E.;
Shengurov, D.;
Krasilnik, Z.

Publication type:

Article

Mercury vacancies as divalent acceptors in HgTe/CdHgTe structures with quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1662, doi. 10.1134/S1063782616120113

By:

Kozlov, D.;
Rumyantsev, V.;
Morozov, S.;
Kadykov, A.;
Fadeev, M.;
Varavin, V.;
Mikhailov, N.;
Dvoretsky, S.;
Gavrilenko, V.;
Teppe, F.

Publication type:

Article

Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1669, doi. 10.1134/S1063782616120125

By:

Maremyanin, K.;
Rumyantsev, V.;
Ikonnikov, A.;
Bovkun, L.;
Chizhevskii, E.;
Zasavitskii, I.;
Gavrilenko, V.

Publication type:

Article

Polarization of the induced THz emission of donors in silicon.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1673, doi. 10.1134/S1063782616120101

By:

Kovalevsky, K.;
Zhukavin, R.;
Tsyplenkov, V.;
Pavlov, S.;
Hübers, H.;
Abrosimov, N.;
Shastin, V.

Publication type:

Article

Resonant features of the terahertz generation in semiconductor nanowires.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1561, doi. 10.1134/S1063782616120241

By:

Trukhin, V.;
Bouravleuv, A.;
Mustafin, I.;
Cirlin, G.;
Kuritsyn, D.;
Rumyantsev, V.;
Morosov, S.;
Kakko, J.;
Huhtio, T.;
Lipsanen, H.

Publication type:

Article

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1678, doi. 10.1134/S1063782616120162

By:

Puzanov, A.;
Obolenskiy, S.;
Kozlov, V.

Publication type:

Article