Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 12

Results: 27

On a new method of heterojunction formation in III-V nanowires.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1566, doi. 10.1134/S1063782616120198
By:
- Sibirev, N.;
- Koryakin, A.;
- Dubrovskii, V.
Publication type:
Article
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1569, doi. 10.1134/S1063782616120204
By:
- Surovegina, E.;
- Demidov, E.;
- Drozdov, M.;
- Murel, A.;
- Khrykin, O.;
- Shashkin, V.;
- Lobaev, M.;
- Gorbachev, A.;
- Viharev, A.;
- Bogdanov, S.;
- Isaev, V.;
- Muchnikov, A.;
- Chernov, V.;
- Radishchev, D.;
- Batler, D.
Publication type:
Article
Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216
By:
- Tarasova, E.;
- Obolenskaya, E.;
- Hananova, A.;
- Obolensky, S.;
- Zemliakov, V.;
- Egorkin, V.;
- Nezhenzev, A.;
- Saharov, A.;
- Zazul'nokov, A.;
- Lundin, V.;
- Zavarin, E.;
- Medvedev, G.
Publication type:
Article
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1579, doi. 10.1134/S1063782616120149
By:
- Obolenskaya, E.;
- Tarasova, E.;
- Churin, A.;
- Obolensky, S.;
- Kozlov, V.
Publication type:
Article
Strained multilayer structures with pseudomorphic GeSiSn layers.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1584, doi. 10.1134/S106378261612023X
By:
- Timofeev, V.;
- Nikiforov, A.;
- Tuktamyshev, A.;
- Yesin, M.;
- Mashanov, V.;
- Gutakovskii, A.;
- Baidakova, N.
Publication type:
Article
Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1589, doi. 10.1134/S1063782616120228
By:
- Tikhov, S.;
- Gorshkov, O.;
- Koryazhkina, M.;
- Kasatkin, A.;
- Antonov, I.;
- Vihrova, O.;
- Morozov, A.
Publication type:
Article
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1600, doi. 10.1134/S106378261612006X
By:
- Fedorov, G.;
- Stepanova, T.;
- Gazaliev, A.;
- Gaiduchenko, I.;
- Kaurova, N.;
- Voronov, B.;
- Goltzman, G.
Publication type:
Article
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1604, doi. 10.1134/S1063782616120277
By:
- Yablonsky, A.;
- Zhukavin, R.;
- Bekin, N.;
- Novikov, A.;
- Yurasov, D.;
- Shaleev, M.
Publication type:
Article
Polariton condensate coherence in planar microcavities in a magnetic field.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1609, doi. 10.1134/S1063782616120058
By:
- Chernenko, A.;
- Rahimi-lman, A.;
- Fischer, J.;
- Amthor, M.;
- Schneider, C.;
- Reitzenstein, S.;
- Forchel, A.;
- Hoefling, S.
Publication type:
Article
Electrical and photoelectric properties of Si-based metal-insulator-semiconductor structures with Au nanoparticles at the insulator-semiconductor interface.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1614, doi. 10.1134/S1063782616120095
By:
- Koryazhkina, M.;
- Tikhov, S.;
- Gorshkov, O.;
- Kasatkin, A.;
- Antonov, I.
Publication type:
Article
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
By:
- Shtrom, I.;
- Bouravleuv, A.;
- Samsonenko, Yu.;
- Khrebtov, A.;
- Soshnikov, I.;
- Reznik, R.;
- Cirlin, G.;
- Dhaka, V.;
- Perros, A.;
- Lipsanen, H.
Publication type:
Article
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1622, doi. 10.1134/S1063782616120289
By:
- Yunin, P.;
- Drozdov, Yu.;
- Chernov, V.;
- Isaev, V.;
- Bogdanov, S.;
- Muchnikov, A.
Publication type:
Article
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1626, doi. 10.1134/S1063782616120265
By:
- Varavin, V.;
- Vasilyev, V.;
- Guzev, A.;
- Dvoretsky, S.;
- Kovchavtsev, A.;
- Marin, D.;
- Sabinina, I.;
- Sidorov, Yu.;
- Sidorov, G.;
- Tsarenko, A.;
- Yakushev, M.
Publication type:
Article
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1630, doi. 10.1134/S1063782616120137
By:
- Novikov, A.;
- Shaleev, M.;
- Yurasov, D.;
- Yunin, P.
Publication type:
Article
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1635, doi. 10.1134/S1063782616120083
By:
- Ishchenko, D.;
- Klimov, A.;
- Shumsky, V.;
- Epov, V.
Publication type:
Article
Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1641, doi. 10.1134/S1063782616120071
By:
- Gudina, S.;
- Arapov, Yu.;
- Saveliev, A.;
- Neverov, V.;
- Podgornykh, S.;
- Shelushinina, N.;
- Yakunin, M.;
- Vasil'evskii, I.;
- Vinichenko, A.
Publication type:
Article
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1651, doi. 10.1134/S1063782616120174
By:
- Rumyantsev, V.;
- Fadeev, M.;
- Morozov, S.;
- Dubinov, A.;
- Kudryavtsev, K.;
- Kadykov, A.;
- Tuzov, I.;
- Dvoretskii, S.;
- Mikhailov, N.;
- Gavrilenko, V.;
- Teppe, F.
Publication type:
Article
Polarization of the photoluminescence of quantum dots incorporated into quantum wires.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1647, doi. 10.1134/S1063782616120150
By:
- Platonov, A.;
- Kochereshko, V.;
- Kats, V.;
- Cirlin, G.;
- Bouravleuv, A.;
- Avdoshina, D.;
- Delga, A.;
- Besombes, L.;
- Mariette, H.
Publication type:
Article
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1684, doi. 10.1134/S1063782616120022
By:
- Akimov, A.;
- Klimov, A.;
- Morozov, S.;
- Suprun, S.;
- Epov, V.;
- Ikonnikov, A.;
- Fadeev, M.;
- Rumyantsev, V.
Publication type:
Article
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1691, doi. 10.1134/S1063782616120034
By:
- Aleshkin, V.;
- Gavrilenko, L.;
- Gaponova, D.;
- Krasil'nik, Z.;
- Kryzhkov, D.
Publication type:
Article
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1657, doi. 10.1134/S1063782616120046
By:
- Baidakova, N.;
- Novikov, A.;
- Shaleev, M.;
- Yurasov, D.;
- Morozova, E.;
- Shengurov, D.;
- Krasilnik, Z.
Publication type:
Article
Mercury vacancies as divalent acceptors in HgTe/CdHgTe structures with quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1662, doi. 10.1134/S1063782616120113
By:
- Kozlov, D.;
- Rumyantsev, V.;
- Morozov, S.;
- Kadykov, A.;
- Fadeev, M.;
- Varavin, V.;
- Mikhailov, N.;
- Dvoretsky, S.;
- Gavrilenko, V.;
- Teppe, F.
Publication type:
Article
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1669, doi. 10.1134/S1063782616120125
By:
- Maremyanin, K.;
- Rumyantsev, V.;
- Ikonnikov, A.;
- Bovkun, L.;
- Chizhevskii, E.;
- Zasavitskii, I.;
- Gavrilenko, V.
Publication type:
Article
Polarization of the induced THz emission of donors in silicon.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1673, doi. 10.1134/S1063782616120101
By:
- Kovalevsky, K.;
- Zhukavin, R.;
- Tsyplenkov, V.;
- Pavlov, S.;
- Hübers, H.;
- Abrosimov, N.;
- Shastin, V.
Publication type:
Article
Resonant features of the terahertz generation in semiconductor nanowires.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1561, doi. 10.1134/S1063782616120241
By:
- Trukhin, V.;
- Bouravleuv, A.;
- Mustafin, I.;
- Cirlin, G.;
- Kuritsyn, D.;
- Rumyantsev, V.;
- Morosov, S.;
- Kakko, J.;
- Huhtio, T.;
- Lipsanen, H.
Publication type:
Article
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1678, doi. 10.1134/S1063782616120162
By:
- Puzanov, A.;
- Obolenskiy, S.;
- Kozlov, V.
Publication type:
Article