Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 11

Results: 26

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1425, doi. 10.1134/S106378261611004X
By:
- Balagula, R.;
- Vinnichenko, M.;
- Makhov, I.;
- Firsov, D.;
- Vorobjev, L.
Publication type:
Article
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1431, doi. 10.1134/S1063782616110051
By:
- Bolshakov, A.;
- Chaldyshev, V.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.
Publication type:
Article
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1435, doi. 10.1134/S1063782616110269
By:
- Yablonsky, A.;
- Morozov, S.;
- Gaponova, D.;
- Aleshkin, V.;
- Shengurov, V.;
- Zvonkov, B.;
- Vikhrova, O.;
- Baidus', N.;
- Krasil'nik, Z.
Publication type:
Article
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075
By:
- Daniltsev, V.;
- Demidov, E.;
- Drozdov, M.;
- Drozdov, Yu.;
- Kraev, S.;
- Surovegina, E.;
- Shashkin, V.;
- Yunin, P.
Publication type:
Article
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1443, doi. 10.1134/S1063782616110087
By:
- Dorokhin, M.;
- Pavlov, D.;
- Bobrov, A.;
- Danilov, Yu.;
- Lesnikov, V.;
- Zvonkov, B.;
- Zdoroveyshchev, A.;
- Kudrin, A.;
- Demina, P.;
- Usov, Yu.;
- Nikolichev, D.;
- Kryukov, R.;
- Zubkov, S.
Publication type:
Article
Germanium laser with a hybrid surface plasmon mode.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1449, doi. 10.1134/S1063782616110099
By:
- Dubinov, A.
Publication type:
Article
On the crystal structure and thermoelectric properties of thin SiMn films.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1453, doi. 10.1134/S1063782616110105
By:
- Erofeeva, I.;
- Dorokhin, M.;
- Lesnikov, V.;
- Zdoroveishchev, A.;
- Kudrin, A.;
- Pavlov, D.;
- Usov, U.
Publication type:
Article
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1458, doi. 10.1134/S1063782616110270
By:
- Zhukavin, R.;
- Kovalevsky, K.;
- Orlov, M.;
- Tsyplenkov, V.;
- Hübers, H.-W.;
- Dessmann, N.;
- Kozlov, D.;
- Shastin, V.
Publication type:
Article
Anharmonic Bloch oscillations of electrons in electrically biased superlattices.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1463, doi. 10.1134/S1063782616110117
By:
- Ivanov, K.;
- Girshova, E.;
- Kaliteevski, M.;
- Clark, S.;
- Gallant, A.
Publication type:
Article
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129
By:
- Kalentyeva, I.;
- Vikhrova, O.;
- Danilov, Yu.;
- Zvonkov, B.;
- Kudrin, A.;
- Drozdov, M.
Publication type:
Article
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1475, doi. 10.1134/S1063782616110245
By:
- Shmagin, V.;
- Vdovichev, S.;
- Morozova, E.;
- Novikov, A.;
- Shaleev, M.;
- Shengurov, D.;
- Krasilnik, Z.
Publication type:
Article
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF films.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1479, doi. 10.1134/S1063782616110130
By:
- Klimov, A.;
- Epov, V.
Publication type:
Article
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1488, doi. 10.1134/S1063782616110038
By:
- Baydus, N.;
- Nekorkin, S.;
- Kolpakov, D.;
- Ershov, A.;
- Aleshkin, V.;
- Dubinov, A.;
- Afonenko, A.
Publication type:
Article
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1493, doi. 10.1134/S1063782616110233
By:
- Shamirzaev, V.;
- Gaisler, V.;
- Shamirzaev, T.
Publication type:
Article
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154
By:
- Kosarev, A.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
On the condensation of exciton polaritons in microcavities induced by a magnetic field.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1506, doi. 10.1134/S1063782616110142
By:
- Kochereshko, V.;
- Avdoshina, D.;
- Savvidis, P.;
- Tsintzos, S.;
- Hatzopoulos, Z.;
- Kavokin, A.;
- Besombes, L.;
- Mariette, H.
Publication type:
Article
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1511, doi. 10.1134/S1063782616110166
By:
- Lobanov, D.;
- Novikov, A.;
- Yunin, P.;
- Skorohodov, E.;
- Shaleev, M.;
- Drozdov, M.;
- Khrykin, O.;
- Buzanov, O.;
- Alenkov, V.;
- Folomin, P.;
- Gritsenko, A.
Publication type:
Article
Dynamic generation of spin-wave currents in hybrid structures.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1515, doi. 10.1134/S1063782616110178
By:
- Lyapilin, I.;
- Okorokov, M.
Publication type:
Article
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1521, doi. 10.1134/S1063782616110191
By:
- Mozharov, A.;
- Kudryashov, D.;
- Bolshakov, A.;
- Cirlin, G.;
- Gudovskikh, A.;
- Mukhin, I.
Publication type:
Article
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1526, doi. 10.1134/S1063782616110208
By:
- Pavelyev, D.;
- Vasilev, A.;
- Kozlov, V.;
- Koschurinov, Yu.;
- Obolenskaya, E.;
- Obolensky, S.;
- Ustinov, V.
Publication type:
Article
Magnetospectroscopy of double HgTe/CdHgTe quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1532, doi. 10.1134/S1063782616110063
By:
- Bovkun, L.;
- Krishtopenko, S.;
- Ikonnikov, A.;
- Aleshkin, V.;
- Kadykov, A.;
- Ruffenach, S.;
- Consejo, C.;
- Teppe, F.;
- Knap, W.;
- Orlita, M.;
- Piot, B.;
- Potemski, M.;
- Mikhailov, N.;
- Dvoretskii, S.;
- Gavrilenko, V.
Publication type:
Article
Study of the structures of cleaved cross sections by Raman spectroscopy.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1539, doi. 10.1134/S106378261611021X
By:
- Plankina, S.;
- Vikhrova, O.;
- Danilov, Yu.;
- Zvonkov, B.;
- Konnova, N.;
- Nezhdanov, A.;
- Pashenkin, I.
Publication type:
Article
Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1543, doi. 10.1134/S1063782616110221
By:
- Polischuk, O.;
- Melnikova, V.;
- Popov, V.
Publication type:
Article
Investigation of the thermal stability of metastable GeSn epitaxial layers.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1548, doi. 10.1134/S106378261611018X
By:
- Martovitsky, V.;
- Sadofyev, Yu.;
- Klekovkin, A.;
- Saraikin, V.;
- Vasil'evskii, I.
Publication type:
Article
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1554, doi. 10.1134/S1063782616110026
By:
- Baidus, N.;
- Kukushkin, V.;
- Zvonkov, B.;
- Nekorkin, S.
Publication type:
Article
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
By:
- Cirlin, G.;
- Shtrom, I.;
- Reznik, R.;
- Samsonenko, Yu.;
- Khrebtov, A.;
- Bouravleuv, A.;
- Soshnikov, I.
Publication type:
Article