Works matching IS 10637826 AND DT 2016 AND VI 50 AND IP 11

Results: 26

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1425, doi. 10.1134/S106378261611004X

By:

Balagula, R.;
Vinnichenko, M.;
Makhov, I.;
Firsov, D.;
Vorobjev, L.

Publication type:

Article

Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1431, doi. 10.1134/S1063782616110051

By:

Bolshakov, A.;
Chaldyshev, V.;
Zavarin, E.;
Sakharov, A.;
Lundin, V.;
Tsatsulnikov, A.

Publication type:

Article

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1435, doi. 10.1134/S1063782616110269

By:

Yablonsky, A.;
Morozov, S.;
Gaponova, D.;
Aleshkin, V.;
Shengurov, V.;
Zvonkov, B.;
Vikhrova, O.;
Baidus', N.;
Krasil'nik, Z.

Publication type:

Article

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075

By:

Daniltsev, V.;
Demidov, E.;
Drozdov, M.;
Drozdov, Yu.;
Kraev, S.;
Surovegina, E.;
Shashkin, V.;
Yunin, P.

Publication type:

Article

Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1443, doi. 10.1134/S1063782616110087

By:

Dorokhin, M.;
Pavlov, D.;
Bobrov, A.;
Danilov, Yu.;
Lesnikov, V.;
Zvonkov, B.;
Zdoroveyshchev, A.;
Kudrin, A.;
Demina, P.;
Usov, Yu.;
Nikolichev, D.;
Kryukov, R.;
Zubkov, S.

Publication type:

Article

Germanium laser with a hybrid surface plasmon mode.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1449, doi. 10.1134/S1063782616110099

By:

Dubinov, A.

Publication type:

Article

On the crystal structure and thermoelectric properties of thin SiMn films.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1453, doi. 10.1134/S1063782616110105

By:

Erofeeva, I.;
Dorokhin, M.;
Lesnikov, V.;
Zdoroveishchev, A.;
Kudrin, A.;
Pavlov, D.;
Usov, U.

Publication type:

Article

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1458, doi. 10.1134/S1063782616110270

By:

Zhukavin, R.;
Kovalevsky, K.;
Orlov, M.;
Tsyplenkov, V.;
Hübers, H.-W.;
Dessmann, N.;
Kozlov, D.;
Shastin, V.

Publication type:

Article

Anharmonic Bloch oscillations of electrons in electrically biased superlattices.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1463, doi. 10.1134/S1063782616110117

By:

Ivanov, K.;
Girshova, E.;
Kaliteevski, M.;
Clark, S.;
Gallant, A.

Publication type:

Article

Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129

By:

Kalentyeva, I.;
Vikhrova, O.;
Danilov, Yu.;
Zvonkov, B.;
Kudrin, A.;
Drozdov, M.

Publication type:

Article

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1475, doi. 10.1134/S1063782616110245

By:

Shmagin, V.;
Vdovichev, S.;
Morozova, E.;
Novikov, A.;
Shaleev, M.;
Shengurov, D.;
Krasilnik, Z.

Publication type:

Article

Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF films.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1479, doi. 10.1134/S1063782616110130

By:

Klimov, A.;
Epov, V.

Publication type:

Article

Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1488, doi. 10.1134/S1063782616110038

By:

Baydus, N.;
Nekorkin, S.;
Kolpakov, D.;
Ershov, A.;
Aleshkin, V.;
Dubinov, A.;
Afonenko, A.

Publication type:

Article

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1493, doi. 10.1134/S1063782616110233

By:

Shamirzaev, V.;
Gaisler, V.;
Shamirzaev, T.

Publication type:

Article

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154

By:

Kosarev, A.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

On the condensation of exciton polaritons in microcavities induced by a magnetic field.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1506, doi. 10.1134/S1063782616110142

By:

Kochereshko, V.;
Avdoshina, D.;
Savvidis, P.;
Tsintzos, S.;
Hatzopoulos, Z.;
Kavokin, A.;
Besombes, L.;
Mariette, H.

Publication type:

Article

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1511, doi. 10.1134/S1063782616110166

By:

Lobanov, D.;
Novikov, A.;
Yunin, P.;
Skorohodov, E.;
Shaleev, M.;
Drozdov, M.;
Khrykin, O.;
Buzanov, O.;
Alenkov, V.;
Folomin, P.;
Gritsenko, A.

Publication type:

Article

Dynamic generation of spin-wave currents in hybrid structures.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1515, doi. 10.1134/S1063782616110178

By:

Lyapilin, I.;
Okorokov, M.

Publication type:

Article

Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1521, doi. 10.1134/S1063782616110191

By:

Mozharov, A.;
Kudryashov, D.;
Bolshakov, A.;
Cirlin, G.;
Gudovskikh, A.;
Mukhin, I.

Publication type:

Article

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1526, doi. 10.1134/S1063782616110208

By:

Pavelyev, D.;
Vasilev, A.;
Kozlov, V.;
Koschurinov, Yu.;
Obolenskaya, E.;
Obolensky, S.;
Ustinov, V.

Publication type:

Article

Magnetospectroscopy of double HgTe/CdHgTe quantum wells.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1532, doi. 10.1134/S1063782616110063

By:

Bovkun, L.;
Krishtopenko, S.;
Ikonnikov, A.;
Aleshkin, V.;
Kadykov, A.;
Ruffenach, S.;
Consejo, C.;
Teppe, F.;
Knap, W.;
Orlita, M.;
Piot, B.;
Potemski, M.;
Mikhailov, N.;
Dvoretskii, S.;
Gavrilenko, V.

Publication type:

Article

Study of the structures of cleaved cross sections by Raman spectroscopy.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1539, doi. 10.1134/S106378261611021X

By:

Plankina, S.;
Vikhrova, O.;
Danilov, Yu.;
Zvonkov, B.;
Konnova, N.;
Nezhdanov, A.;
Pashenkin, I.

Publication type:

Article

Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1543, doi. 10.1134/S1063782616110221

By:

Polischuk, O.;
Melnikova, V.;
Popov, V.

Publication type:

Article

Investigation of the thermal stability of metastable GeSn epitaxial layers.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1548, doi. 10.1134/S106378261611018X

By:

Martovitsky, V.;
Sadofyev, Yu.;
Klekovkin, A.;
Saraikin, V.;
Vasil'evskii, I.

Publication type:

Article

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1554, doi. 10.1134/S1063782616110026

By:

Baidus, N.;
Kukushkin, V.;
Zvonkov, B.;
Nekorkin, S.

Publication type:

Article

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257

By:

Cirlin, G.;
Shtrom, I.;
Reznik, R.;
Samsonenko, Yu.;
Khrebtov, A.;
Bouravleuv, A.;
Soshnikov, I.

Publication type:

Article