Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 8
Results: 22
Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er.
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- Semiconductors, 2015, v. 49, n. 8, p. 992, doi. 10.1134/S1063782615080138
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Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III-V/II-VI multijunction solar cells.
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- Semiconductors, 2015, v. 49, n. 8, p. 1000, doi. 10.1134/S1063782615080217
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On the shift of the electroluminescence spectra of InGaN/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses.
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- Semiconductors, 2015, v. 49, n. 8, p. 1007, doi. 10.1134/S1063782615080229
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Deep centers in TiO-Si structures.
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- Semiconductors, 2015, v. 49, n. 8, p. 1012, doi. 10.1134/S1063782615080102
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AlGaAs/GaAs(100) hetermostructures with anomalously high carrier mobility.
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- Semiconductors, 2015, v. 49, n. 8, p. 1019, doi. 10.1134/S1063782615080187
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Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level.
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- Semiconductors, 2015, v. 49, n. 8, p. 1025, doi. 10.1134/S1063782615080084
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Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films.
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- Semiconductors, 2015, v. 49, n. 8, p. 1030, doi. 10.1134/S1063782615080126
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Capacitance-voltage characteristics of (Al/Ti)/AlO/ n-GaN MIS structures.
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- Semiconductors, 2015, v. 49, n. 8, p. 1035, doi. 10.1134/S1063782615080096
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Study of a MHEMT heterostructure with an InGaAs channel MBE-grown on a GaAs substrate using reciprocal space mapping.
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- Semiconductors, 2015, v. 49, n. 8, p. 1039, doi. 10.1134/S1063782615080035
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Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field.
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- Semiconductors, 2015, v. 49, n. 8, p. 1045, doi. 10.1134/S1063782615080199
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Investigation of microcrystalline silicon by the small-angle X-ray-scattering technique.
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- Semiconductors, 2015, v. 49, n. 8, p. 1052, doi. 10.1134/S1063782615080205
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Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon.
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- Semiconductors, 2015, v. 49, n. 8, p. 1057, doi. 10.1134/S1063782615080060
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Thermoelectric transport in epitaxial graphene on a size-quantized substrate.
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- Semiconductors, 2015, v. 49, n. 8, p. 1062, doi. 10.1134/S1063782615080047
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Vacancies in epitaxial graphene.
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- Semiconductors, 2015, v. 49, n. 8, p. 1069, doi. 10.1134/S1063782615080072
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GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm.
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- Semiconductors, 2015, v. 49, n. 8, p. 1079, doi. 10.1134/S1063782615080114
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Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers.
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- Semiconductors, 2015, v. 49, n. 8, p. 1083, doi. 10.1134/S1063782615080151
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Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers.
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- Semiconductors, 2015, v. 49, n. 8, p. 1090, doi. 10.1134/S106378261508014X
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Site-Controlled Growth of Single InP QDs.
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- Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230
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On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures.
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- Semiconductors, 2015, v. 49, n. 8, p. 1099, doi. 10.1134/S1063782615080023
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Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.
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- Semiconductors, 2015, v. 49, n. 8, p. 1104, doi. 10.1134/S1063782615080059
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Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of 'Multimodal' InAs QDs.
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- Semiconductors, 2015, v. 49, n. 8, p. 1111, doi. 10.1134/S1063782615080175
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Structural defect generation and band-structure features in the HfNiCoSn semiconductor.
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- Semiconductors, 2015, v. 49, n. 8, p. 985, doi. 10.1134/S1063782615080163
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