Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 8

Results: 22

Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1030, doi. 10.1134/S1063782615080126

By:

Klyui, N.;
Semenenko, M.;
Khatsevich, I.;
Makarov, A.;
Kabaldin, A.;
Fomovskii, F.;
Han, Wei

Publication type:

Article

Capacitance-voltage characteristics of (Al/Ti)/AlO/ n-GaN MIS structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1035, doi. 10.1134/S1063782615080096

By:

Ivanov, P.;
Potapov, A.;
Nikolaev, A.;
Lundin, V.;
Sakharov, A.;
Tsatsulnikov, A.;
Afanas'ev, A.;
Romanov, A.;
Osachev, E.

Publication type:

Article

Study of a MHEMT heterostructure with an InGaAs channel MBE-grown on a GaAs substrate using reciprocal space mapping.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1039, doi. 10.1134/S1063782615080035

By:

Aleshin, A.;
Bugaev, A.;
Ermakova, M.;
Ruban, O.

Publication type:

Article

Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1045, doi. 10.1134/S1063782615080199

By:

Shalimova, M.;
Sachuk, N.

Publication type:

Article

Investigation of microcrystalline silicon by the small-angle X-ray-scattering technique.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1052, doi. 10.1134/S1063782615080205

By:

Sharkov, M.;
Boiko, M.;
Boiko, A.;
Bobyl, A.;
Konnikov, S.

Publication type:

Article

Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 992, doi. 10.1134/S1063782615080138

By:

Mezdrogina, M.;
Eremenko, M.;
Smirnov, A.;
Petrov, V.;
Terukov, E.

Publication type:

Article

Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III-V/II-VI multijunction solar cells.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1000, doi. 10.1134/S1063782615080217

By:

Sorokin, S.;
Gronin, S.;
Sedova, I.;
Klimko, G.;
Evropeitsev, E.;
Baidakova, M.;
Sitnikova, A.;
Toropov, A.;
Ivanov, S.

Publication type:

Article

On the shift of the electroluminescence spectra of InGaN/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1007, doi. 10.1134/S1063782615080229

By:

Veleschuk, V.;
Vlasenko, A.;
Kisselyuk, M.;
Vlasenko, Z.;
Khmil', D.;
Borshch, V.

Publication type:

Article

Deep centers in TiO-Si structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1012, doi. 10.1134/S1063782615080102

By:

Kalygina, V.;
Petrova, Yu.;
Prudaev, I.;
Tolbanov, O.;
Tsupiy, S.

Publication type:

Article

AlGaAs/GaAs(100) hetermostructures with anomalously high carrier mobility.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1019, doi. 10.1134/S1063782615080187

By:

Seredin, P.;
Goloshchapov, D.;
Lenshin, A.;
Ternovaya, V.;
Arsentyev, I.;
Nikolaev, D.;
Tarasov, I.;
Shamakhov, V.;
Popov, A.

Publication type:

Article

Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1025, doi. 10.1134/S1063782615080084

By:

Georgobiani, V.;
Gonchar, K.;
Osminkina, L.;
Timoshenko, V.

Publication type:

Article

Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1057, doi. 10.1134/S1063782615080060

By:

Baklanov, A.;
Gutkin, A.;
Kalyuzhnyy, N.;
Brunkov, P.

Publication type:

Article

Thermoelectric transport in epitaxial graphene on a size-quantized substrate.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1062, doi. 10.1134/S1063782615080047

By:

Alisultanov, Z.;
Mirzegasanova, N.

Publication type:

Article

Vacancies in epitaxial graphene.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1069, doi. 10.1134/S1063782615080072

By:

Davydov, S.

Publication type:

Article

GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1079, doi. 10.1134/S1063782615080114

By:

Khvostikov, V.;
Sorokina, S.;
Soldatenkov, F.;
Timoshina, N.

Publication type:

Article

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1083, doi. 10.1134/S1063782615080151

By:

Podoskin, A.;
Shashkin, I.;
Slipchenko, S.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1090, doi. 10.1134/S106378261508014X

By:

Nadtochiy, A.;
Mintairov, S.;
Kalyuzhnyy, N.;
Rouvimov, S.;
Shernyakov, Yu.;
Payusov, A.;
Maximov, M.;
Zhukov, A.

Publication type:

Article

Site-Controlled Growth of Single InP QDs.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230

By:

Vlasov, A.;
Mintairov, A.;
Kalyuzhnyy, N.;
Mintairov, S.;
Salii, R.;
Denisyuk, A.;
Babunts, R.

Publication type:

Article

On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1099, doi. 10.1134/S1063782615080023

By:

Aleksandrov, P.;
Belova, N.;
Demakov, K.;
Shemardov, S.

Publication type:

Article

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1104, doi. 10.1134/S1063782615080059

By:

Baidakova, N.;
Bobrov, A.;
Drozdov, M.;
Novikov, A.;
Pavlov, D.;
Shaleev, M.;
Yunin, P.;
Yurasov, D.;
Krasilnik, Z.

Publication type:

Article

Structural defect generation and band-structure features in the HfNiCoSn semiconductor.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 985, doi. 10.1134/S1063782615080163

By:

Romaka, V.;
Rogl, P.;
Stadnyk, Yu.;
Krayovskyy, V.;
Kaczorowski, D.;
Nakonechnyy, I.;
Goryn, A.

Publication type:

Article

Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of 'Multimodal' InAs QDs.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1111, doi. 10.1134/S1063782615080175

By:

Salii, R.;
Mintairov, S.;
Brunkov, P.;
Nadtochiy, A.;
Payusov, A.;
Kalyuzhnyy, N.

Publication type:

Article