Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 7

Results: 24

Magnetic structure of TlFeS and TlFeSe chalcogenides.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 879, doi. 10.1134/S1063782615070039

By:

Asgerov, E.;
Dang, N.;
Beskrovnyy, A.;
Madadzada, A.;
Ismayilov, D.;
Mehdiyeva, R.;
Jabarov, S.;
Karimova, E.

Publication type:

Article

Thermoelectric power of n-InSb in a transverse quantizing magnetic field.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 883, doi. 10.1134/S1063782615070076

By:

Gadzhialiev, M.;
Bashirov, R.;
Pirmagomedov, Z.;
Efendieva, T.;
Mädge, H.;
Filar, K.

Publication type:

Article

Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO:H (0 < x < 2).

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 867, doi. 10.1134/S1063782615070222

By:

Undalov, Yu.;
Terukov, E.

Publication type:

Article

Features of the percolation scheme of transformation of the vibrational spectrum with varying alloy composition for Cd(TeSe) and (CdZn)Te alloys with soft bonds.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 885, doi. 10.1134/S106378261507012X

By:

Kozyrev, S.

Publication type:

Article

Behavior of the Fe impurity in HgInTe crystals.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 892, doi. 10.1134/S106378261507009X

By:

Grushka, O.;
Savchuk, A.;
Chupyra, S.;
Bilichuk, S.

Publication type:

Article

Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 895, doi. 10.1134/S1063782615070209

By:

Red'ko, R.;
Budzulyak, S.;
Korbutyak, D.;
Lotsko, A.;
Vakhnyak, N.;
Demchyna, L.;
Kalytchuk, S.;
Konakova, R.;
Milenin, V.;
Bykov, Yu.;
Egorov, S.;
Eremeev, A.

Publication type:

Article

Nitridation of an unreconstructed and reconstructed (√31 ×√31) R ± 9° (0001) sapphire surface in an ammonia flow.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 905, doi. 10.1134/S1063782615070180

By:

Milakhina, D.;
Malin, T.;
Mansurov, V.;
Galitsin, Yu.;
Zhuravlev, K.

Publication type:

Article

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 899, doi. 10.1134/S1063782615070143

By:

Sadananda Kumar, N.;
Bangera, Kasturi;
Shivakumar, G.

Publication type:

Article

Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 911, doi. 10.1134/S1063782615070179

By:

Lavrukhin, D.;
Yachmenev, A.;
Bugaev, A.;
Galiev, G.;
Klimov, E.;
Khabibullin, R.;
Ponomarev, D.;
Maltsev, P.

Publication type:

Article

Investigations of nanodimensional AlO films deposited by ion-plasma sputtering onto porous silicon.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 915, doi. 10.1134/S1063782615070210

By:

Seredin, P.;
Lenshin, A.;
Goloshchapov, D.;
Lukin, A.;
Arsentyev, I.;
Bondarev, A.;
Tarasov, I.

Publication type:

Article

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131

By:

Kulbachinskii, V.;
Oveshnikov, L.;
Lunin, R.;
Yuzeeva, N.;
Galiev, G.;
Klimov, E.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Resistance of 4 H-SiC Schottky barriers at high forward-current densities.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 930, doi. 10.1134/S1063782615070106

By:

Ivanov, P.;
Samsonova, T.;
Il'inskaya, N.;
Serebrennikova, O.;
Kon'kov, O.;
Potapov, A.

Publication type:

Article

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 935, doi. 10.1134/S1063782615070258

By:

Zhukov, A.;
Asryan, L.;
Semenova, E.;
Zubov, F.;
Kryzhanovskaya, N.;
Maximov, M.

Publication type:

Article

Optical and electrical properties of silicon nanopillars.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 939, doi. 10.1134/S1063782615070088

By:

Golobokova, L.;
Nastaushev, Yu.;
Dultsev, F.;
Kryzhanovskaya, N.;
Moiseev, E.;
Kozhukhov, A.;
Latyshev, A.

Publication type:

Article

DNA detection by THz pumping.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 944, doi. 10.1134/S1063782615070064

By:

Chernev, A.;
Bagraev, N.;
Klyachkin, L.;
Emelyanov, A.;
Dubina, M.

Publication type:

Article

Dispersion of the refractive index of a samarium-doped SeTe chalcogenide glassy semiconductor.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 949, doi. 10.1134/S1063782615070040

By:

Atayeva, S.;
Mekhtiyeva, S.;
Isayev, A.

Publication type:

Article

Luminescence-kinetic spectroscopy of compound complexes of polyphenylquinolines.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 959, doi. 10.1134/S1063782615070027

By:

Aleksandrova, E.;
Svetlichnyi, V.;
Matyushina, N.;
Myagkova, L.;
Daineko, S.;
Martynov, I.;
Tameev, A.

Publication type:

Article

Formation of III-V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 962, doi. 10.1134/S1063782615070234

By:

Vasil'ev, V.;
Gagis, G.;
Kuchinskii, V.;
Danil'chenko, V.

Publication type:

Article

Avalanche mode of high-voltage overloaded p- i- n diode switching to the conductive state by pulsed illumination.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 967, doi. 10.1134/S1063782615070167

By:

Kyuregyan, A.

Publication type:

Article

Effect of the length of ligands passivating quantum dots on the electrooptical characteristics of organic light-emitting diodes.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 953, doi. 10.1134/S1063782615070155

By:

Kurochkin, N.;
Vashchenko, A.;
Vitukhnovsky, A.;
Tananaev, P.

Publication type:

Article

Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 972, doi. 10.1134/S1063782615070192

By:

Pavluchenko, A.;
Markov, L.;
Smirnova, I.;
Zakheim, D.

Publication type:

Article

Light emitting diode-photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 980, doi. 10.1134/S1063782615070052

By:

Bezyazychnaya, T.;
Bogdanovich, M.;
Kabanov, V.;
Kabanau, D.;
Lebiadok, Y.;
Parashchuk, V.;
Ryabtsev, A.;
Ryabtsev, G.;
Shpak, P.;
Shchemelev, M.;
Andreev, I.;
Kunitsyna, E.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article

Effect of impurity impact ionization on the dynamic characteristics of 4 H-SiC p- n-- n diodes at low temperatures (77 K).

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 976, doi. 10.1134/S1063782615070118

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.

Publication type:

Article

Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 843, doi. 10.1134/S1063782615070246

By:

Zakharov, A.

Publication type:

Article