Interstitial carbon formation in irradiated copper-doped silicon.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 712, doi. 10.1134/S1063782615060263
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 6
Results: 25
1
2
Effect of copper on the recombination activity of extended defects in silicon.
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- Semiconductors, 2015, v. 49, n. 6, p. 716, doi. 10.1134/S106378261506010X
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- Publication type:
- Article
3
EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon.
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- Semiconductors, 2015, v. 49, n. 6, p. 720, doi. 10.1134/S1063782615060172
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- Publication type:
- Article
4
Recombination activity of interfaces in multicrystalline silicon.
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- Semiconductors, 2015, v. 49, n. 6, p. 724, doi. 10.1134/S1063782615060196
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- Article
5
Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties.
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- Semiconductors, 2015, v. 49, n. 6, p. 729, doi. 10.1134/S1063782615060160
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- Article
6
Aluminoborosilicate glasses codoped with rare-earth elements as radiation-protective covers for solar cells.
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- Semiconductors, 2015, v. 49, n. 6, p. 736, doi. 10.1134/S1063782615060147
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- Article
7
Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents.
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- Semiconductors, 2015, v. 49, n. 6, p. 741, doi. 10.1134/S1063782615060226
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- Article
8
Study of the properties of silicon-based semiconductor converters for betavoltaic cells.
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- Semiconductors, 2015, v. 49, n. 6, p. 746, doi. 10.1134/S1063782615060202
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- Article
9
On the effect of bias on the behavior of MOS structures subjected to ionizing radiation.
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- Semiconductors, 2015, v. 49, n. 6, p. 774, doi. 10.1134/S1063782615060020
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- Article
10
Si(hhm) surfaces: Templates for developing nanostructures.
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- Semiconductors, 2015, v. 49, n. 6, p. 753, doi. 10.1134/S106378261506007X
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- Article
11
Specific features of Hall measurements in doped semiconductors.
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- Semiconductors, 2015, v. 49, n. 6, p. 760, doi. 10.1134/S1063782615060044
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- Article
12
On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level.
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- Semiconductors, 2015, v. 49, n. 6, p. 763, doi. 10.1134/S1063782615060068
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- Publication type:
- Article
13
The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped SbTe and BiSe.
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- Semiconductors, 2015, v. 49, n. 6, p. 767, doi. 10.1134/S1063782615060135
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- Article
14
Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation.
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- Semiconductors, 2015, v. 49, n. 6, p. 749, doi. 10.1134/S1063782615060238
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- Article
15
Application of the wavelet transform to the problem of the detection and determination of the Lorentzian positions of the 2 D band in the Raman spectrum of bilayer graphene.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 814, doi. 10.1134/S1063782615060251
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- Article
16
Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation.
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- Semiconductors, 2015, v. 49, n. 6, p. 785, doi. 10.1134/S1063782615060123
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- Publication type:
- Article
17
Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides.
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- Semiconductors, 2015, v. 49, n. 6, p. 791, doi. 10.1134/S1063782615060159
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- Article
18
Holes localized in nanostructures in an external magnetic field: g-factor and mixing of states.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 797, doi. 10.1134/S1063782615060214
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- Publication type:
- Article
19
Wannier-Mott excitons in semiconductors with a superlattice.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 807, doi. 10.1134/S106378261506024X
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- Article
20
Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 780, doi. 10.1134/S1063782615060184
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- Publication type:
- Article
21
On the tensosensitivity of a p- n junction under illumination.
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- Semiconductors, 2015, v. 49, n. 6, p. 819, doi. 10.1134/S1063782615060111
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- Publication type:
- Article
22
High-efficiency plasma treatment for surface modification of LPCVD ZnO.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 823, doi. 10.1134/S1063782615060032
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- Publication type:
- Article
23
Hopping transport in the space-charge region of p- n structures with InGaN/GaN QWs as a source of excess 1/ f noise and efficiency droop in LEDs.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 827, doi. 10.1134/S1063782615060056
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- Publication type:
- Article
24
Effect of different loss mechanisms in SiGeSn based mid-infrared laser.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 836, doi. 10.1134/S1063782615060081
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- Publication type:
- Article
25
Low-temperature conductivity of silicon doped with antimony.
- Published in:
- Semiconductors, 2015, v. 49, n. 6, p. 705, doi. 10.1134/S1063782615060093
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- Publication type:
- Article