Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 3
Results: 25
Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150-200 K.
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- Semiconductors, 2015, v. 49, n. 3, p. 285, doi. 10.1134/S1063782615030161
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Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped.
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- Semiconductors, 2015, v. 49, n. 3, p. 290, doi. 10.1134/S1063782615030185
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Positronics of radiation-induced effects in chalcogenide glassy semiconductors.
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- Semiconductors, 2015, v. 49, n. 3, p. 298, doi. 10.1134/S1063782615030197
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Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature.
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- Semiconductors, 2015, v. 49, n. 3, p. 305, doi. 10.1134/S1063782615030240
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Investigation of surface potential in the V-defect region of MBE CdHgTe film.
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- Semiconductors, 2015, v. 49, n. 3, p. 309, doi. 10.1134/S106378261503015X
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Optical properties of alloys based on II-S and II-Te chalcogenides.
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- Semiconductors, 2015, v. 49, n. 3, p. 313, doi. 10.1134/S1063782615030124
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On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals.
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- Semiconductors, 2015, v. 49, n. 3, p. 319, doi. 10.1134/S1063782615030239
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Effect of water and a biologically active medium on different modifications of silicon.
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- Semiconductors, 2015, v. 49, n. 3, p. 325, doi. 10.1134/S1063782615030069
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Molecular-beam epitaxy of heterostructures of wide-gap II-VI compounds for low-threshold lasers with optical and electron pumping.
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- Semiconductors, 2015, v. 49, n. 3, p. 331, doi. 10.1134/S1063782615030215
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Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate.
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- Semiconductors, 2015, v. 49, n. 3, p. 337, doi. 10.1134/S1063782615030136
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Optical and structural properties of ensembles of colloidal AgS quantum dots in gelatin.
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- Semiconductors, 2015, v. 49, n. 3, p. 373, doi. 10.1134/S1063782615030173
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- Article
Photoelectric characteristics of metal-GaO-GaAs structures.
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- Semiconductors, 2015, v. 49, n. 3, p. 345, doi. 10.1134/S1063782615030100
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Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons.
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- Semiconductors, 2015, v. 49, n. 3, p. 358, doi. 10.1134/S1063782615030057
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Electrical properties of Pd-oxide-InP structures.
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- Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094
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Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 3, p. 367, doi. 10.1134/S1063782615030148
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- Article
Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett technique.
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- Semiconductors, 2015, v. 49, n. 3, p. 380, doi. 10.1134/S1063782615030252
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Optical studies of carriers' vertical transport in the alternately-strained ZnSSe/CdSe superlattice.
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- Semiconductors, 2015, v. 49, n. 3, p. 352, doi. 10.1134/S1063782615030070
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Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium.
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- Semiconductors, 2015, v. 49, n. 3, p. 387, doi. 10.1134/S1063782615030082
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Effect of nanoscale tin-dioxide layers on the efficiency of CdS/CdTe-based film solar elements.
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- Semiconductors, 2015, v. 49, n. 3, p. 394, doi. 10.1134/S1063782615030112
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Response of semiconductor nonlinear circuits to external perturbations.
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- Semiconductors, 2015, v. 49, n. 3, p. 401, doi. 10.1134/S1063782615030033
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Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions.
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- Semiconductors, 2015, v. 49, n. 3, p. 406, doi. 10.1134/S1063782615030203
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Electrooptical properties and structural features of amorphous ITO.
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- Semiconductors, 2015, v. 49, n. 3, p. 414, doi. 10.1134/S1063782615030045
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Erratum to: 'Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy'.
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- 2015
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- Erratum
First principles calculations of structure parameters and transition pressures of GaNBi alloys.
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- Semiconductors, 2015, v. 49, n. 3, p. 279, doi. 10.1134/S1063782615030021
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Formation of Si nanocrystals in multilayered nanoperiodic AlO/SiO/AlO/SiO/.../Si(100) structures: Synchrotron and photoluminescence data.
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- Semiconductors, 2015, v. 49, n. 3, p. 409, doi. 10.1134/S1063782615030227
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