Charge-carrier transport mechanisms in composites containing carbon-nanotube inclusions.
- Published in:
- Semiconductors, 2015, v. 49, n. 13, p. 1689, doi. 10.1134/S106378261513014X
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 13
Results: 15
1
2
Zinc diffusion upon isovalent substitution in gallium phosphide.
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- Semiconductors, 2015, v. 49, n. 13, p. 1684, doi. 10.1134/S1063782615130151
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- Article
3
On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures.
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- Semiconductors, 2015, v. 49, n. 13, p. 1695, doi. 10.1134/S1063782615130096
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- Article
4
A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties.
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- Semiconductors, 2015, v. 49, n. 13, p. 1727, doi. 10.1134/S1063782615130084
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- Article
5
Modeling of the structural fragments of substances with nanoscale dispersion.
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- Semiconductors, 2015, v. 49, n. 13, p. 1702, doi. 10.1134/S1063782615130126
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- Article
6
Luminescence properties of Si-containing porous matrix-PbS nanoparticle systems.
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- Semiconductors, 2015, v. 49, n. 13, p. 1710, doi. 10.1134/S1063782615130138
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- Article
7
Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy.
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- Semiconductors, 2015, v. 49, n. 13, p. 1714, doi. 10.1134/S1063782615130102
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- Publication type:
- Article
8
Analytical approach to calculating the effective dielectric characteristics of heterogeneous textured materials with randomly shaped inclusions.
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- Semiconductors, 2015, v. 49, n. 13, p. 1718, doi. 10.1134/S1063782615130163
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- Article
9
Spin valves based on MnIr antiferromagnet with controllable functional parameters.
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- Semiconductors, 2015, v. 49, n. 13, p. 1698, doi. 10.1134/S1063782615130114
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- Article
10
Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures.
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- Semiconductors, 2015, v. 49, n. 13, p. 1731, doi. 10.1134/S1063782615130072
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- Article
11
Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm.
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- Semiconductors, 2015, v. 49, n. 13, p. 1735, doi. 10.1134/S1063782615130047
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- Article
12
Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range.
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- Semiconductors, 2015, v. 49, n. 13, p. 1739, doi. 10.1134/S1063782615130060
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- Article
13
Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes.
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- Semiconductors, 2015, v. 49, n. 13, p. 1743, doi. 10.1134/S1063782615130023
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- Article
14
Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers.
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- Semiconductors, 2015, v. 49, n. 13, p. 1749, doi. 10.1134/S1063782615130035
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- Publication type:
- Article
15
Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures.
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- Semiconductors, 2015, v. 49, n. 13, p. 1679, doi. 10.1134/S1063782615130059
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- Publication type:
- Article