Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 12
Results: 25
Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers.
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- Semiconductors, 2015, v. 49, n. 12, p. 1564, doi. 10.1134/S1063782615120179
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Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.
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- Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180
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Nonradiative recombination of excitons in semimagnetic quantum dots.
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- Semiconductors, 2015, v. 49, n. 12, p. 1575, doi. 10.1134/S1063782615120064
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Initial growth stages of Si-Ge-Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 12, p. 1582, doi. 10.1134/S1063782615120222
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Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.
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- Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
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Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1592, doi. 10.1134/S1063782615120246
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Polarization and spectral characteristics of the two-photon luminescence from colloidal gold nanoparticles excited by tunable laser radiation.
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- Semiconductors, 2015, v. 49, n. 12, p. 1596, doi. 10.1134/S1063782615120258
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CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1601, doi. 10.1134/S106378261512026X
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Impurity-induced photoconductivity of narrow-gap Cadmium-Mercury-Telluride structures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1605, doi. 10.1134/S1063782615120106
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Investigation of magnetoabsorption at different temperatures in HgTe/CdHgTe quantum-well heterostructures in pulsed magnetic fields.
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- Semiconductors, 2015, v. 49, n. 12, p. 1611, doi. 10.1134/S1063782615120131
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Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T.
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- Semiconductors, 2015, v. 49, n. 12, p. 1616, doi. 10.1134/S1063782615120210
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Long-wavelength injection lasers based on PbSnSe alloys and their use in solid-state spectroscopy.
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- Semiconductors, 2015, v. 49, n. 12, p. 1623, doi. 10.1134/S1063782615120118
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Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells.
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- Semiconductors, 2015, v. 49, n. 12, p. 1627, doi. 10.1134/S1063782615120052
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On estimations of the melting temperature of graphene-like compounds.
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- Semiconductors, 2015, v. 49, n. 12, p. 1634, doi. 10.1134/S1063782615120076
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Electron conductivity in GeTe and GeSe upon ion implantation of Bi.
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- Semiconductors, 2015, v. 49, n. 12, p. 1640, doi. 10.1134/S1063782615120088
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Simulation of the polarization current of geminate pairs in an organic material with Gaussian disorder.
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- Semiconductors, 2015, v. 49, n. 12, p. 1645, doi. 10.1134/S106378261512009X
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Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions.
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- Semiconductors, 2015, v. 49, n. 12, p. 1651, doi. 10.1134/S1063782615120209
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Conductivity over localized states of the system of (TlInSe)(TlGaTe) solid solutions.
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- Semiconductors, 2015, v. 49, n. 12, p. 1655, doi. 10.1134/S1063782615120192
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Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1661, doi. 10.1134/S106378261512012X
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Increase in the Shockley-Read-Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels.
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- Semiconductors, 2015, v. 49, n. 12, p. 1665, doi. 10.1134/S1063782615120040
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Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1-2.0 mm.
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- Semiconductors, 2015, v. 49, n. 12, p. 1671, doi. 10.1134/S1063782615120027
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High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1537, doi. 10.1134/S1063782615120155
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Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum.
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- Semiconductors, 2015, v. 49, n. 12, p. 1545, doi. 10.1134/S1063782615120039
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Universal properties of materials with the Dirac dispersion relation of low-energy excitations.
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- Semiconductors, 2015, v. 49, n. 12, p. 1550, doi. 10.1134/S1063782615120143
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On the role of negative effective masses in the formation of the conductivity of semiconductor superlattices.
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- Semiconductors, 2015, v. 49, n. 12, p. 1557, doi. 10.1134/S1063782615120167
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