Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 11
Results: 25
Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy.
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- Semiconductors, 2015, v. 49, n. 11, p. 1400, doi. 10.1134/S1063782615110044
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Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures.
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- Semiconductors, 2015, v. 49, n. 11, p. 1405, doi. 10.1134/S1063782615110020
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Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands.
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- Semiconductors, 2015, v. 49, n. 11, p. 1410, doi. 10.1134/S106378261511024X
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Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 11, p. 1415, doi. 10.1134/S1063782615110263
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SiN layers for the in-situ passivation of GaN-based HEMT structures.
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- Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251
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Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.
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- Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081
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Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity.
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- Semiconductors, 2015, v. 49, n. 11, p. 1430, doi. 10.1134/S106378261511010X
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Temperature switching of cavity modes in InN microcrystals.
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- Semiconductors, 2015, v. 49, n. 11, p. 1435, doi. 10.1134/S1063782615110111
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On a semiconductor laser with a p- n tunnel junction with radiation emission through the substrate.
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- Semiconductors, 2015, v. 49, n. 11, p. 1440, doi. 10.1134/S1063782615110123
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Hodographs in diode-structure diagnostics.
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- Semiconductors, 2015, v. 49, n. 11, p. 1443, doi. 10.1134/S1063782615110196
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Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier.
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- Semiconductors, 2015, v. 49, n. 11, p. 1448, doi. 10.1134/S1063782615110147
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Tandem photovoltaic cells with a composite intermediate layer.
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- Semiconductors, 2015, v. 49, n. 11, p. 1453, doi. 10.1134/S1063782615110226
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On the radiation resistance of planar Gunn diodes with δ-doped layers.
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- Semiconductors, 2015, v. 49, n. 11, p. 1459, doi. 10.1134/S1063782615110160
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Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator.
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- Semiconductors, 2015, v. 49, n. 11, p. 1468, doi. 10.1134/S1063782615110172
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Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods.
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- Semiconductors, 2015, v. 49, n. 11, p. 1473, doi. 10.1134/S1063782615110159
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Temperature quenching of spontaneous emission in tunnel-injection nanostructures.
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- Semiconductors, 2015, v. 49, n. 11, p. 1483, doi. 10.1134/S1063782615110214
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Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation.
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- Semiconductors, 2015, v. 49, n. 11, p. 1493, doi. 10.1134/S1063782615110135
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Spatial hole burning and spectral stability of a quantum-dot laser.
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- Semiconductors, 2015, v. 49, n. 11, p. 1499, doi. 10.1134/S1063782615110184
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Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser.
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- Semiconductors, 2015, v. 49, n. 11, p. 1506, doi. 10.1134/S1063782615110202
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Dynamic characteristics of 4 H-SiC drift step recovery diodes.
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- Semiconductors, 2015, v. 49, n. 11, p. 1511, doi. 10.1134/S1063782615110093
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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency.
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- Semiconductors, 2015, v. 49, n. 11, p. 1516, doi. 10.1134/S1063782615110238
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Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range.
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- Semiconductors, 2015, v. 49, n. 11, p. 1522, doi. 10.1134/S1063782615110068
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Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6-5.8)-μm under current pumping.
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- Semiconductors, 2015, v. 49, n. 11, p. 1527, doi. 10.1134/S106378261511007X
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Dynamics of carrier recombination in a semiconductor laser structure.
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- Semiconductors, 2015, v. 49, n. 11, p. 1531, doi. 10.1134/S1063782615110056
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Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures.
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- Semiconductors, 2015, v. 49, n. 11, p. 1393, doi. 10.1134/S1063782615110032
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