Nature of the blue emission band in zinc selenide containing sulfur isovalent impurity.
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- Semiconductors, 2014, v. 48, n. 9, p. 1161, doi. 10.1134/S1063782614090140
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- Article
Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 9
Results: 25
1
2
On the band-gap width of (FeInS)(InS) alloys.
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- Semiconductors, 2014, v. 48, n. 9, p. 1163, doi. 10.1134/S106378261409005X
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- Article
3
Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide.
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- Semiconductors, 2014, v. 48, n. 9, p. 1139, doi. 10.1134/S1063782614090085
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- Article
4
Decrease in the binding energy of donors in heavily doped GaN:Si layers.
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- Semiconductors, 2014, v. 48, n. 9, p. 1134, doi. 10.1134/S1063782614090176
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- Article
5
Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix.
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- Semiconductors, 2014, v. 48, n. 9, p. 1155, doi. 10.1134/S1063782614090048
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- Article
6
On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures.
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- Semiconductors, 2014, v. 48, n. 9, p. 1167, doi. 10.1134/S1063782614090127
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- Article
7
Charge-transport mechanisms in heterostructures based on TiO:CrO thin films.
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- Semiconductors, 2014, v. 48, n. 9, p. 1174, doi. 10.1134/S1063782614090164
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- Article
8
On the kinetics of electron processes in Co γ-irradiated n-Ge single crystals.
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- Semiconductors, 2014, v. 48, n. 9, p. 1141, doi. 10.1134/S1063782614090097
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- Article
9
Structural and optical properties of ZnO films produced by a nonvacuum chemical technique.
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- Semiconductors, 2014, v. 48, n. 9, p. 1145, doi. 10.1134/S106378261409019X
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- Article
10
Features of the local structure of the SeTe chalcogenide vitreous semiconductor doped with samarium.
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- Semiconductors, 2014, v. 48, n. 9, p. 1151, doi. 10.1134/S1063782614090152
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- Article
11
Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair.
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- Semiconductors, 2014, v. 48, n. 9, p. 1178, doi. 10.1134/S1063782614090218
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- Article
12
Optical properties of heterostructures with deep AlSb/InAsSb/AlSb quantum wells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1185, doi. 10.1134/S1063782614090188
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- Publication type:
- Article
13
Ion-beam synthesis of InSb nanocrystals in the buried SiO layer of a silicon-on-insulator structure.
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- Semiconductors, 2014, v. 48, n. 9, p. 1196, doi. 10.1134/S1063782614090231
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- Article
14
Surface of porous silicon under hydrophilization and hydrolytic degradation.
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- Semiconductors, 2014, v. 48, n. 9, p. 1211, doi. 10.1134/S1063782614090243
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- Article
15
Temperature stability of contact systems for GaSb-based photovoltaic converters.
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- Semiconductors, 2014, v. 48, n. 9, p. 1248, doi. 10.1134/S1063782614090115
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- Article
16
High-power AlGaInN LED chips with two-level metallization.
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- Semiconductors, 2014, v. 48, n. 9, p. 1254, doi. 10.1134/S1063782614090267
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- Article
17
Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method.
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- Semiconductors, 2014, v. 48, n. 9, p. 1205, doi. 10.1134/S1063782614090206
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- Article
18
Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon.
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- Semiconductors, 2014, v. 48, n. 9, p. 1202, doi. 10.1134/S1063782614090061
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- Article
19
Recombination and trapping centers in pure and doped TlBr crystals.
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- Semiconductors, 2014, v. 48, n. 9, p. 1123, doi. 10.1134/S1063782614090103
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- Article
20
Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1217, doi. 10.1134/S1063782614090024
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- Article
21
Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors.
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- Semiconductors, 2014, v. 48, n. 9, p. 1222, doi. 10.1134/S106378261409022X
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- Article
22
Technology and electronic properties of PHEMT AlGaAs/InGaAs/GaAs compositionally graded quantum wells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1226, doi. 10.1134/S1063782614090255
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- Article
23
Interaction of heterogeneous thin films and phase formation in the Tl-Fe-S system.
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- Semiconductors, 2014, v. 48, n. 9, p. 1233, doi. 10.1134/S1063782614090036
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- Publication type:
- Article
24
Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films.
- Published in:
- Semiconductors, 2014, v. 48, n. 9, p. 1237, doi. 10.1134/S1063782614090139
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- Article
25
Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target.
- Published in:
- Semiconductors, 2014, v. 48, n. 9, p. 1242, doi. 10.1134/S1063782614090073
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- Publication type:
- Article