Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 996, doi. 10.1134/S1063782614080089
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 8
Results: 23
1
2
Conductivity compensation in n-4 H-SiC (CVD) under irradiation with 0.9-MeV electrons.
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- Semiconductors, 2014, v. 48, n. 8, p. 1006, doi. 10.1134/S1063782614080156
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- Article
3
Specific features of magnetoresistance in overcompensated manganese-doped silicon.
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- Semiconductors, 2014, v. 48, n. 8, p. 986, doi. 10.1134/S106378261408003X
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- Publication type:
- Article
4
Deformation paramagnetic defects in Fz-Si:P crystals.
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- Semiconductors, 2014, v. 48, n. 8, p. 989, doi. 10.1134/S1063782614080144
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- Article
5
On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example.
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- Semiconductors, 2014, v. 48, n. 8, p. 1088, doi. 10.1134/S1063782614080120
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- Publication type:
- Article
6
Study of postgrowth processing in the fabrication of quantum-cascade lasers.
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- Semiconductors, 2014, v. 48, n. 8, p. 1103, doi. 10.1134/S1063782614080181
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- Publication type:
- Article
7
DFT modeling of Mn charged states in GaMnAs diluted ferromagnetic semiconductors: The cluster approach.
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- Semiconductors, 2014, v. 48, n. 8, p. 1010, doi. 10.1134/S1063782614080168
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- Publication type:
- Article
8
Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors.
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- Semiconductors, 2014, v. 48, n. 8, p. 1041, doi. 10.1134/S1063782614080119
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- Publication type:
- Article
9
Effect of interband scattering on transport phenomena in p-PbSbTe.
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- Semiconductors, 2014, v. 48, n. 8, p. 999, doi. 10.1134/S1063782614080193
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- Publication type:
- Article
10
Electrical properties of thin-film semiconductor heterojunctions n-TiO/ p-CuInS.
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- Semiconductors, 2014, v. 48, n. 8, p. 1046, doi. 10.1134/S1063782614080077
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- Publication type:
- Article
11
On the picosecond switching of a high-density current (60 kA/cm) via a Si closing switch based on a superfast ionization front.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1067, doi. 10.1134/S1063782614080132
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- Publication type:
- Article
12
On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1017, doi. 10.1134/S1063782614080247
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- Publication type:
- Article
13
Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1023, doi. 10.1134/S106378261408017X
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- Publication type:
- Article
14
Characterization of porous silicon carbide according to absorption and photoluminescence spectra.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1028, doi. 10.1134/S1063782614080041
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- Publication type:
- Article
15
Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1031, doi. 10.1134/S1063782614080235
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- Publication type:
- Article
16
On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1036, doi. 10.1134/S1063782614080053
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- Publication type:
- Article
17
On the detection of U centers in g-AsSe films by thermal cycling measurements of electrical conductivity.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1063, doi. 10.1134/S1063782614080107
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- Publication type:
- Article
18
Structural and optical properties of heavily doped AlGaAsP:Mg alloys produced by metal-organic chemical vapor deposition.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1094, doi. 10.1134/S1063782614080211
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- Publication type:
- Article
19
Theoretical studies on dimerization reactions of 4, 7-diphenyl-1,10-phenanthroline (BPhen) and bathocuproine (BCP) in organic semiconductors.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1051, doi. 10.1134/S1063782614080223
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- Publication type:
- Article
20
Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1079, doi. 10.1134/S1063782614080065
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- Publication type:
- Article
21
Synthesis of compositionally different multicomponent metal-oxide films (SnO)(ZnO) ( x = 1-0.5).
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1118, doi. 10.1134/S106378261408020X
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- Publication type:
- Article
22
Effect of light on the mobility of free carriers in indium-monoselenide crystals.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 981, doi. 10.1134/S1063782614080028
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- Publication type:
- Article
23
Quantitative calibration and germanium SIMS depth profiling in GeSi/Si heterostructures.
- Published in:
- Semiconductors, 2014, v. 48, n. 8, p. 1109, doi. 10.1134/S1063782614080090
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- Publication type:
- Article