Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 7
Results: 22
Absorption spectra of TiO thin films synthesized by the reactive radio-frequency magnetron sputtering of titanium.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 848, doi. 10.1134/S1063782614070094
- By:
- Publication type:
- Article
High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 911, doi. 10.1134/S1063782614070197
- By:
- Publication type:
- Article
Effect of the growth temperature on the statistical parameters of GaN surface morphology.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148
- By:
- Publication type:
- Article
Electronic properties of p-GaN(Mg) irradiated with reactor neutrons.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 859, doi. 10.1134/S1063782614070033
- By:
- Publication type:
- Article
Erratum to: 'Influence of the nonequilibrium-carrier concentration on the Hall voltage in a p-type semiconductor'.
- Published in:
- 2014
- By:
- Publication type:
- Erratum
Electrical properties of anisotype n-CdO/ p-Si heterojunctions.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 899, doi. 10.1134/S1063782614070203
- By:
- Publication type:
- Article
Raman scattering in ZnGaSe single crystals.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 868, doi. 10.1134/S1063782614070112
- By:
- Publication type:
- Article
On the structure of InSb nanowires in the channels of chrysotile asbestos.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 974, doi. 10.1134/S1063782614070215
- By:
- Publication type:
- Article
Transport properties of epitaxial graphene formed on the surface of a superconductor.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 924, doi. 10.1134/S1063782614070021
- By:
- Publication type:
- Article
Electrophoretic deposition of CdS colloidal nanoparticles onto an amorphous silicon membrane.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 967, doi. 10.1134/S1063782614070057
- By:
- Publication type:
- Article
Monte Carlo simulation of the effect of silicon monoxide on silicon-nanocluster formation.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 891, doi. 10.1134/S1063782614070136
- By:
- Publication type:
- Article
Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070
- By:
- Publication type:
- Article
Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO-Si structures.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 961, doi. 10.1134/S1063782614070100
- By:
- Publication type:
- Article
Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 875, doi. 10.1134/S1063782614070161
- By:
- Publication type:
- Article
Generation of low-frequency higher harmonics in a resonant-tunneling diode.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 954, doi. 10.1134/S1063782614070045
- By:
- Publication type:
- Article
Effect of neutron irradiation on the structure of silicon p- n junctions of voltage limiters.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 935, doi. 10.1134/S1063782614070185
- By:
- Publication type:
- Article
Features of electron transport in relaxed Si/SiGe transistor heterostructures with a high doping level.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 942, doi. 10.1134/S106378261407015X
- By:
- Publication type:
- Article
Photoconductivity of CdS films, undoped and doped with alkali-metal impurity ions.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 864, doi. 10.1134/S1063782614070124
- By:
- Publication type:
- Article
Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 905, doi. 10.1134/S1063782614070082
- By:
- Publication type:
- Article
Relationship between the photocatalytic and photoluminescence properties of zinc oxide doped with copper and manganese.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 842, doi. 10.1134/S1063782614070173
- By:
- Publication type:
- Article
Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 917, doi. 10.1134/S1063782614070227
- By:
- Publication type:
- Article
On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs semiconductors.
- Published in:
- Semiconductors, 2014, v. 48, n. 7, p. 839, doi. 10.1134/S1063782614070069
- By:
- Publication type:
- Article