Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 6

Results: 25

On the diffusion growth mechanism of semiconductor nanowires with the participation of hot atoms.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 821, doi. 10.1134/S1063782614060116

By:

Grankin, M.;
Bazhyn, A.;
Grankin, D.

Publication type:

Article

Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 809, doi. 10.1134/S1063782614060244

By:

Tsai, Jung-Hui;
Lee, Ching-Sung;
Chiang, Chung-Cheng;
Chao, Yi-Ting

Publication type:

Article

Electrical properties of a SiC-Si multilayer structure.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 792, doi. 10.1134/S1063782614060074

By:

Bozhevol'nov, V.;
Yafyasov, A.;
Miailovskii, V.;
Egorova, Yu.;
Sokolov, A.;
Filatova, E.

Publication type:

Article

Effect of ion-beam treatment during reactive high-frequency magnetron sputtering on macrostresses in ITO films.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 743, doi. 10.1134/S1063782614060177

By:

Krylov, P.;
Zakirova, R.;
Fedotova, I.

Publication type:

Article

Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO/Si substrate.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 804, doi. 10.1134/S1063782614060049

By:

Antonova, I.;
Golod, S.;
Soots, R.;
Komonov, A.;
Seleznev, V.;
Sergeev, M.;
Volodin, V.;
Prinz, V.

Publication type:

Article

Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 815, doi. 10.1134/S1063782614060219

By:

Nikolichev, D.;
Boryakov, A.;
Zubkov, S.;
Kryukov, R.;
Dorokhin, M.;
Kudrin, A.

Publication type:

Article

On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 733, doi. 10.1134/S1063782614060220

By:

Romanov, V.;
Baidakova, M.;
Moiseev, K.

Publication type:

Article

Influence of the nonequilibrium-carrier concentration on the hall voltage in a p-type semiconductor.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 772, doi. 10.1134/S1063782614060165

By:

Konin, A.

Publication type:

Article

Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 711, doi. 10.1134/S1063782614060207

By:

Mirgorodskiy, I.;
Golovan, L.;
Timoshenko, V.;
Semenov, A.;
Puzikov, V.

Publication type:

Article

Optical properties and electronic structure of mercury iodide.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 715, doi. 10.1134/S1063782614060232

By:

Sobolev, V.;
Anisimov, D.

Publication type:

Article

Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 828, doi. 10.1134/S106378261406013X

By:

Ivina, N.;
Orlov, L.

Publication type:

Article

Features of the spin-lattice relaxation of nuclear spins Cu in the CuAlO semiconductor compound.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 779, doi. 10.1134/S1063782614060190

By:

Matukhin, V.;
Shulgin, D.;
Shmidt, S.;
Terukov, E.

Publication type:

Article

Specific features of the low-temperature conductivity and photoconductivity of CuInSe-ZnInSe alloys.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 727, doi. 10.1134/S1063782614060086

By:

Bozhko, V.;
Novosad, O.;
Parasyuk, O.;
Vainorius, N.;
Sakaviciues, A.;
Janonis, V.;
Kazukauskas, V.;
Chichurin, A.

Publication type:

Article

CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 767, doi. 10.1134/S1063782614060268

By:

Yakushev, M.;
Varavin, V.;
Remesnik, V.;
Marin, D.

Publication type:

Article

Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 796, doi. 10.1134/S1063782614060025

By:

Alekberov, R.;
Isayev, A.;
Mekhtiyeva, S.;
Isayeva, G.

Publication type:

Article

Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 748, doi. 10.1134/S1063782614060050

By:

Askerov, B.;
Figarova, S.;
Huseynov, H.;
Figarov, V.

Publication type:

Article

Raman scattering in As-Se-S and As-Se-Te Chalcogenide vitreous semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 800, doi. 10.1134/S1063782614060037

By:

Alekberov, R.;
Mekhtiyeva, S.;
Isayeva, G.;
Isayev, A.

Publication type:

Article

Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 722, doi. 10.1134/S1063782614060189

By:

Makara, V.;
Steblenko, L.;
Korotchenkov, O.;
Nadtochiy, A.;
Kalinichenko, D.;
Kuryliuk, A.;
Kobzar, Yu.;
Krit, A.;
Naumenko, S.

Publication type:

Article

Properties of TiO films on silicon substrate.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 739, doi. 10.1134/S1063782614060141

By:

Kalygina, V.;
Novikov, V.;
Petrova, Yu.;
Tolbanov, O.;
Chernikov, E.;
Tcupiy, S.;
Yaskevich, T.

Publication type:

Article

Magnetic properties of (FeInS)(CuInS) single-crystal alloys.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 705, doi. 10.1134/S1063782614060062

By:

Bodnar, I.;
Trukhanov, S.

Publication type:

Article

Influence of the stark effect on the resonance excitation transfer between quantum dots.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 760, doi. 10.1134/S1063782614060104

By:

Golovinskii, P.

Publication type:

Article

On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 701, doi. 10.1134/S1063782614060098

By:

Davydov, S.;
Lebedev, A.

Publication type:

Article

Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 754, doi. 10.1134/S1063782614060128

By:

Grigorieva, N.;
Egorov, A.;
Zaitsev, D.;
Nikitina, E.;
Seisyan, R.

Publication type:

Article

On the size distribution in three-dimensional quantum-dot crystals.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 783, doi. 10.1134/S1063782614060256

By:

Vengrenovich, R.;
Ivanskii, B.;
Stasyk, M.;
Panko, I.

Publication type:

Article

On the photopleochroism coefficient and its temperature dynamics in native oxide- p-InSe heterojunctions.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 776, doi. 10.1134/S1063782614060153

By:

Katerynchuk, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article