Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 5
Results: 24
Pyroelectric properties of the wide-gap semiconductor CdS in the low-temperature region.
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- Semiconductors, 2014, v. 48, n. 5, p. 562, doi. 10.1134/S1063782614050194
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On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength.
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- Semiconductors, 2014, v. 48, n. 5, p. 590, doi. 10.1134/S1063782614050236
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Intersubband optical absorption coefficients and refractive index changes in spherical hydrogenic antidots.
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- Semiconductors, 2014, v. 48, n. 5, p. 596, doi. 10.1134/S1063782614050054
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Temperature selectivity of the radiation effect on silicon MOS transistors.
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- Semiconductors, 2014, v. 48, n. 5, p. 659, doi. 10.1134/S1063782614050091
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Thermal expansion and thermal conductivity of InS and CuInS compounds and (CuInS)(InS) alloys.
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- Semiconductors, 2014, v. 48, n. 5, p. 557, doi. 10.1134/S1063782614050030
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- Article
Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.
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- Semiconductors, 2014, v. 48, n. 5, p. 691, doi. 10.1134/S1063782614050200
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Negative photoconductivity in films of alloys of II-VI compounds.
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- Semiconductors, 2014, v. 48, n. 5, p. 570, doi. 10.1134/S1063782614050066
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Heat capacity of hexagonal boron nitride sheet in Holstein model.
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- Semiconductors, 2014, v. 48, n. 5, p. 617, doi. 10.1134/S1063782614050157
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Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects.
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- Semiconductors, 2014, v. 48, n. 5, p. 612, doi. 10.1134/S1063782614050170
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Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures.
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- Semiconductors, 2014, v. 48, n. 5, p. 621, doi. 10.1134/S1063782614050108
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Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium.
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- Semiconductors, 2014, v. 48, n. 5, p. 630, doi. 10.1134/S106378261405008X
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The Hall conductivity of graphene.
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- Semiconductors, 2014, v. 48, n. 5, p. 636, doi. 10.1134/S1063782614050145
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On the control efficiency of a high-power laser thyristor emitting in the 890-910 nm spectral range.
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- Semiconductors, 2014, v. 48, n. 5, p. 697, doi. 10.1134/S1063782614050224
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- Article
Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction.
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- Semiconductors, 2014, v. 48, n. 5, p. 584, doi. 10.1134/S1063782614050248
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Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions.
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- Semiconductors, 2014, v. 48, n. 5, p. 686, doi. 10.1134/S1063782614050212
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Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.
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- Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078
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- Article
Influence of bismuth on the optical properties of GeSbTe thin films.
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- Semiconductors, 2014, v. 48, n. 5, p. 577, doi. 10.1134/S1063782614050169
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On the features of hydrogen detection by a semiconductor structure grown on a 6 H-SiC substrate by the combined method of platinum ion implantation and deposition.
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- Semiconductors, 2014, v. 48, n. 5, p. 602, doi. 10.1134/S106378261405025X
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- Article
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.
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- Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029
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On the role of metal contacts in solar cells based on titanium dioxide and di-(isothiocyanate)-bis-(2,2′-bipyridyl-4,4′-dicarboxylate)ruthenium(II).
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- Semiconductors, 2014, v. 48, n. 5, p. 683, doi. 10.1134/S106378261405011X
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Semiconductor behavior of nanocrystalline carbon.
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- Semiconductors, 2014, v. 48, n. 5, p. 649, doi. 10.1134/S1063782614050042
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Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.
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- Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133
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Modeling the efficiency of multijunction solar cells.
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- Semiconductors, 2014, v. 48, n. 5, p. 675, doi. 10.1134/S1063782614050182
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Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping.
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- Semiconductors, 2014, v. 48, n. 5, p. 666, doi. 10.1134/S1063782614050121
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