Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 5

Results: 24

Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 686, doi. 10.1134/S1063782614050212

By:

Slipchenko, S.;
Podoskin, A.;
Shashkin, I.;
Zolotarev, V.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078

By:

Galiev, G.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

On the control efficiency of a high-power laser thyristor emitting in the 890-910 nm spectral range.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 697, doi. 10.1134/S1063782614050224

By:

Slipchenko, S.;
Podoskin, A.;
Vasil'eva, V.;
Pikhtin, N.;
Rozhkov, A.;
Gorbatyuk, A.;
Zolotarev, V.;
Veselov, D.;
Jabotinskii, A.;
Petukhov, A.;
Tarasov, I.;
Bagaev, T.;
Zverkov, M.;
Konyaev, V.;
Kurniavko, Y.;
Ladugin, M.;
Lobintsov, A.;
Marmalyuk, A.;
Padalitsa, A.;
Simakov, V.

Publication type:

Article

Pyroelectric properties of the wide-gap semiconductor CdS in the low-temperature region.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 562, doi. 10.1134/S1063782614050194

By:

Shaldin, Yu.;
Matyjasik, S.

Publication type:

Article

Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 621, doi. 10.1134/S1063782614050108

By:

Konakova, R.;
Kolomys, A.;
Okhrimenko, O.;
Strelchuk, V.;
Svetlichnyi, A.;
Grigoriev, M.;
Konoplev, B.

Publication type:

Article

Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 584, doi. 10.1134/S1063782614050248

By:

Zaitsev, D.;
Seisyan, R.

Publication type:

Article

On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 590, doi. 10.1134/S1063782614050236

By:

Tkach, N.;
Seti, Ju.

Publication type:

Article

Intersubband optical absorption coefficients and refractive index changes in spherical hydrogenic antidots.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 596, doi. 10.1134/S1063782614050054

By:

Davatolhagh, S.;
Khordad, R.;
Jafari, A.

Publication type:

Article

Temperature selectivity of the radiation effect on silicon MOS transistors.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 659, doi. 10.1134/S1063782614050091

By:

Koman, B.

Publication type:

Article

Thermal expansion and thermal conductivity of InS and CuInS compounds and (CuInS)(InS) alloys.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 557, doi. 10.1134/S1063782614050030

By:

Bodnar, I.

Publication type:

Article

Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 691, doi. 10.1134/S1063782614050200

By:

Slipchenko, S.;
Podoskin, A.;
Pikhtin, N.;
Zolotarev, V.;
Shashkin, I.;
Leshko, A.;
Lutetskyi, A.;
Rastegaeva, M.;
Tarasov, I.;
Kop'ev, P.

Publication type:

Article

Negative photoconductivity in films of alloys of II-VI compounds.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 570, doi. 10.1134/S1063782614050066

By:

Jafarov, M.;
Nasirov, E.;
Mamedova, S.

Publication type:

Article

Heat capacity of hexagonal boron nitride sheet in Holstein model.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 617, doi. 10.1134/S1063782614050157

By:

Mousavi, Hamze

Publication type:

Article

Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 612, doi. 10.1134/S1063782614050170

By:

Pankratov, E.;
Gus'kova, O.;
Drozdov, M.;
Abrosimova, N.;
Vorotyntsev, V.

Publication type:

Article

Influence of bismuth on the optical properties of GeSbTe thin films.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 577, doi. 10.1134/S1063782614050169

By:

Nguyen, H.;
Kozyukhin, S.;
Pevtsov, A.

Publication type:

Article

Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 630, doi. 10.1134/S106378261405008X

By:

Grabov, V.;
Demidov, E.;
Komarov, V.;
Matveev, D.;
Nikolaeva, A.;
Markushevs, D.;
Konstantinov, E.;
Konstantinova, E.

Publication type:

Article

The Hall conductivity of graphene.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 636, doi. 10.1134/S1063782614050145

By:

Mousavi, Hamze;
Behroozi, Samad

Publication type:

Article

On the features of hydrogen detection by a semiconductor structure grown on a 6 H-SiC substrate by the combined method of platinum ion implantation and deposition.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 602, doi. 10.1134/S106378261405025X

By:

Zuev, V.;
Grigoriev, S.;
Romanov, R.;
Fominski, V.;
Grigoriev, V.

Publication type:

Article

Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029

By:

Belevskii, P.;
Vinoslavkii, M.;
Poroshin, V.;
Baidus, N.;
Zvonkov, B.

Publication type:

Article

Semiconductor behavior of nanocrystalline carbon.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 649, doi. 10.1134/S1063782614050042

By:

Brantov, S.

Publication type:

Article

On the role of metal contacts in solar cells based on titanium dioxide and di-(isothiocyanate)-bis-(2,2′-bipyridyl-4,4′-dicarboxylate)ruthenium(II).

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 683, doi. 10.1134/S106378261405011X

By:

Logunov, A.;
Mashin, A.;
Stroganov, I.

Publication type:

Article

Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133

By:

Mintairov, M.;
Evstropov, V.;
Kalyuzhnyy, N.;
Mintairov, S.;
Shvarts, M.;
Timoshina, N.;
Salii, R.;
Lantratov, V.

Publication type:

Article

Modeling the efficiency of multijunction solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 675, doi. 10.1134/S1063782614050182

By:

Sachenko, A.;
Kostylyov, V.;
Kulish, N.;
Sokolovskyi, I.;
Shkrebty, A.

Publication type:

Article

Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 666, doi. 10.1134/S1063782614050121

By:

Lukashin, V.;
Pashkovskii, A.;
Zhuravlev, K.;
Toropov, A.;
Lapin, V.;
Golant, E.;
Kapralova, A.

Publication type:

Article