Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 4

Results: 26

Features of the band structure of (CuInSe)(MeSe) alloys (Me = Mn, Fe).

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 417, doi. 10.1134/S1063782614040101

By:

Hasanli, Sh.;
Basalaev, Yu.;
Samedova, U.

Publication type:

Article

Long-channel field-effect transistor with short-channel transistor properties.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 481, doi. 10.1134/S1063782614040137

By:

Karimov, A.;
Yodgorova, D.;
Abdulkhaev, O.

Publication type:

Article

Morphological characteristics of grain boundaries in multicrystalline silicon.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 476, doi. 10.1134/S1063782614040228

By:

Pescherova, S.;
Nepomnyaschih, A.;
Pavlova, L.;
Eliseev, I.;
Presnyakov, R.

Publication type:

Article

p-GaSb(Ox)/ n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 455, doi. 10.1134/S106378261404023X

By:

Rud', V.;
Rud', Yu.;
Terukov, E.;
Ushakova, T.;
Il'chuk, G.

Publication type:

Article

Specific features of the sol-gel formation and optical properties of 3 d metal/porous silicon composites.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 551, doi. 10.1134/S1063782614040174

By:

Lenshin, A.;
Seredin, P.;
Minakov, D.;
Kashkarov, V.;
Agapov, B.;
Domashevskaya, E.;
Kononova, I.;
Moshnikov, V.;
Terebova, N.;
Shabanova, I.

Publication type:

Article

Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 465, doi. 10.1134/S1063782614040113

By:

Gergel, V.;
Altukhov, I.;
Verkhovtseva, A.;
Galiev, G.;
Gorshkova, N.;
Zhigaltsov, S.;
Zelenyi, A.;
Il'ichev, E.;
Minkin, V.;
Paprotskij, S.;
Yakupov, M.

Publication type:

Article

Study of GaInP solar-cell interfaces by variable-flux spectral measurements.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 459, doi. 10.1134/S1063782614040216

By:

Morozov, I.;
Gudovskikh, A.

Publication type:

Article

Electrical properties of MOS diodes In/TiO/ p-CdTe.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 487, doi. 10.1134/S1063782614040071

By:

Brus, V.;
Ilashchuk, M.;
Orletsky, I.;
Maryanchuk, P.;
Ulyanytskiy, K.

Publication type:

Article

Structure and properties of electrodeposited films and film stacks for precursors of chalcopyrite and kesterite solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 521, doi. 10.1134/S1063782614040150

By:

Klochko, N.;
Khrypunov, G.;
Volkova, N.;
Kopach, V.;
Momotenko, A.;
Lyubov, V.

Publication type:

Article

On the polarization caused by bulk charges and the ionic conductivity in TlInSe crystals.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 427, doi. 10.1134/S1063782614040253

By:

Sardarly, R.;
Samedov, O.;
Alieva, N.;
Abdullayev, A.;
Huseynov, E.;
Hasanov, I.;
Salmanov, F.

Publication type:

Article

On the thermal properties of AgTe and AgSe in the region of the phase transition.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 423, doi. 10.1134/S1063782614040058

By:

Aliev, S.;
Arasly, D.

Publication type:

Article

Formation of built-in potential in Si (100) crystals under microwave plasma treatment.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 511, doi. 10.1134/S1063782614040277

By:

Yafarov, R.

Publication type:

Article

Effect of the tin impurity on the energy spectrum and photoelectric properties of nanostructured InO films.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 451, doi. 10.1134/S1063782614040083

By:

Drozdov, K.;
Krylov, I.;
Irkhina, A.;
Vasiliev, R.;
Rumyantseva, M.;
Gaskov, A.;
Ryabova, L.;
Khokhlov, D.

Publication type:

Article

Thermoelectric efficiency of intermetallic compound ZnSb.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 432, doi. 10.1134/S1063782614040095

By:

Fedorov, M.;
Prokofieva, L.;
Ravich, Yu.;
Konstantinov, P.;
Pshenay-Severin, D.;
Shabaldin, A.

Publication type:

Article

Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 517, doi. 10.1134/S1063782614040265

By:

Shemukhin, A.;
Balakshin, Y.;
Chernysh, V.;
Golubkov, S.;
Egorov, N.;
Sidorov, A.

Publication type:

Article

Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/ p-InSe heterojunctions.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 545, doi. 10.1134/S1063782614040149

By:

Khandozhko, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Properties of ZnCoO films produced by pulsed laser deposition with fast particle separation.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 538, doi. 10.1134/S1063782614040186

By:

Lotin, A.;
Novodvorsky, O.;
Rylkov, V.;
Zuev, D.;
Khramova, O.;
Pankov, M.;
Aronzon, B.;
Semisalova, A.;
Perov, N.;
Lashkul, A.;
Lahderanta, E.;
Panchenko, V.

Publication type:

Article

Light emission from tin-dioxide crystals.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 442, doi. 10.1134/S1063782614040034

By:

Agekian, V.;
Serov, A.;
Filosofov, N.

Publication type:

Article

Current flow through metal shunts in ohmic contacts to n-Si.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 492, doi. 10.1134/S1063782614040241

By:

Sachenko, A.;
Belyaev, A.;
Pilipenko, V.;
Petlitskaya, T.;
Anischik, V.;
Boltovets, N.;
Konakova, R.;
Kudryk, Ya.;
Vinogradov, A.;
Sheremet, V.

Publication type:

Article

Nonlinear optical effect upon the irradiation of GaN with cluster ions.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 446, doi. 10.1134/S1063782614040125

By:

Karaseov, P.;
Karabeshkin, K.;
Titov, A.;
Shilov, V.;
Ermolaeva, G.;
Maslov, V.;
Orlova, A.

Publication type:

Article

Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 501, doi. 10.1134/S106378261404006X

By:

Babichev, A.;
Lazarenko, A.;
Nikitina, E.;
Pirogov, E.;
Sobolev, M.;
Egorov, A.

Publication type:

Article

Electrodeposited zinc oxide arrays with the moth-eye effect.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 531, doi. 10.1134/S1063782614040162

By:

Klochko, N.;
Khrypunov, G.;
Myagchenko, Y.;
Melnychuk, E.;
Kopach, V.;
Klepikova, K.;
Lyubov, V.;
Kopach, A.

Publication type:

Article

Composite materials based on nanostructured zinc oxide.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 471, doi. 10.1134/S1063782614040022

By:

Abdullin, Kh.;
Bakranov, N.;
Ismailov, D.;
Kalkozova, J.;
Kumekov, S.;
Podrezova, L.;
Cicero, G.

Publication type:

Article

Model of the behavior of MOS structures under ionizing irradiation.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 505, doi. 10.1134/S1063782614040046

By:

Aleksandrov, O.

Publication type:

Article

Electrical properties of MOS capacitors formed by PEALD grown AlO on silicon.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 497, doi. 10.1134/S1063782614040204

By:

Mahajan, A.;
Khairnar, A.;
Thibeault, B.

Publication type:

Article

Calculation of the electron mobility for the Δ model of the conduction band of germanium single crystals.

Published in:

Semiconductors, 2014, v. 48, n. 4, p. 438, doi. 10.1134/S1063782614040198

By:

Luniov, S.;
Nazarchuk, P.;
Burban, O.

Publication type:

Article