Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 2

Results: 28

Optical absorption of vanadium in ZnSe single crystals.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 142, doi. 10.1134/S1063782614020213
By:
- Nitsuk, Yu.
Publication type:
Article
Impact ionization of excitons in single-crystal silicon and its effect on the exciton concentration and luminescence near the fundamental absorption edge.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 178, doi. 10.1134/S1063782614020080
By:
- Emel'yanov, A.
Publication type:
Article
Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 235, doi. 10.1134/S1063782614020043
By:
- Belolipetskiy, A.;
- Gusev, O.;
- Dmitriev, A.;
- Terukov, E.;
- Yassievich, I.
Publication type:
Article
Isotype surface-barrier n-TiN/ n-Si heterostructure.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 219, doi. 10.1134/S1063782614020274
By:
- Solovan, M.;
- Brus, V.;
- Maryanchuk, P.
Publication type:
Article
Anomalies in the thermal and electrical conductivity of CuInSe crystals.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 152, doi. 10.1134/S1063782614020171
By:
- Mygal, V.;
- But, A.;
- Bodnar, I.
Publication type:
Article
Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 216, doi. 10.1134/S1063782614020250
By:
- Sinyavskii, E.;
- Karapetyan, S.
Publication type:
Article
Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 257, doi. 10.1134/S1063782614020055
By:
- Bordovskii, G.;
- Marchenko, A.;
- Nikolaeva, A.;
- Seregin, P.;
- Terukov, E.
Publication type:
Article
Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134
By:
- Izhnin, I.;
- Izhnin, A.;
- Mynbaev, K.;
- Bazhenov, N.;
- Fitsych, E.;
- Yakushev, M.;
- Mikhailov, N.;
- Varavin, V.;
- Dvoretsky, S.
Publication type:
Article
Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 184, doi. 10.1134/S1063782614020067
By:
- Bryantseva, T.;
- Lybchenko, D.;
- Lybchenko, V.;
- Markov, I.;
- Markov, R.
Publication type:
Article
Photosensitivity of structures with quantum wells under normal radiation incidence.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 212, doi. 10.1134/S106378261402016X
By:
- Kulikov, V.;
- Chaly, V.
Publication type:
Article
Role of charged defects in the photoconductivity of SeAs chalcogenide glassy semiconductor with the EuF impurity.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 148, doi. 10.1134/S1063782614020122
By:
- Isayev, A.;
- Mekhtiyeva, S.;
- Garibova, S.;
- Zeynalov, V.
Publication type:
Article
Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 245, doi. 10.1134/S1063782614020262
By:
- Solomonov, A.;
- Tarasov, S.;
- Men'kovich, E.;
- Lamkin, I.;
- Kurin, S.;
- Antipov, A.;
- Barash, I.;
- Roenkov, A.;
- Helava, H.;
- Makarov, Yu.
Publication type:
Article
Effect of exposure to optical radiation and temperature on the electrical and optical properties of InO films produced by autowave oxidation.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 207, doi. 10.1134/S1063782614020286
By:
- Tambasov, I.;
- Myagkov, V.;
- Ivanenko, A.;
- Bykova, L.;
- Yozhikova, E.;
- Maksimov, I.;
- Ivanov, V.
Publication type:
Article
Optical and electrical properties of 4 H-SiC irradiated with Xe ions.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 156, doi. 10.1134/S1063782614020146
By:
- Kalinina, E.;
- Chuchvaga, N.;
- Bogdanova, E.;
- Strel'chuk, A.;
- Shustov, D.;
- Zamoryanskaya, M.;
- Skuratov, V.
Publication type:
Article
Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 163, doi. 10.1134/S1063782614020079
By:
- Denisov, B.;
- Nikishin, E.
Publication type:
Article
Comparative photoelectric characteristics of nanostructured PbSnSe films obtained by the codeposition and layer-by-layer deposition of PbSe and SnSe.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 263, doi. 10.1134/S1063782614020195
By:
- Mukhamedzyanov, H.;
- Markov, V.;
- Maskaeva, L.
Publication type:
Article
Effect of annealing on the electrical properties of PbMnTe single crystals with excess tellurium.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 139, doi. 10.1134/S1063782614020031
By:
- Bagiyeva, G.;
- Abdinova, G.;
- Mustafayev, N.;
- Abdinov, D.
Publication type:
Article
Electron-phonon processes in semiconductors at low temperatures.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 167, doi. 10.1134/S106378261402002X
By:
- Aliev, S.
Publication type:
Article
Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 268, doi. 10.1134/S1063782614020109
By:
- Grudinkin, S.;
- Feoktistov, N.;
- Bogdanov, K.;
- Baranov, M.;
- Baranov, A.;
- Fedorov, A.;
- Golubev, V.
Publication type:
Article
Inelastic electron scattering cross-section spectroscopy of GeSi nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 224, doi. 10.1134/S1063782614020225
By:
- Parshin, A.;
- P'yanovskaya, E.;
- Pchelyakov, O.;
- Mikhlin, Yu.;
- Nikiforov, A.;
- Timofeev, V.;
- Esin, M.
Publication type:
Article
Dielectric properties of MnGaS single crystals in an alternating electric field.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 204, doi. 10.1134/S1063782614020201
By:
- Niftiev, N.;
- Tagiev, O.;
- Muradov, M.;
- Mamedov, F.
Publication type:
Article
Electron spin polarization and longitudinal autosoliton current in p-InSb in a longitudinal magnetic field.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 135, doi. 10.1134/S1063782614020158
By:
- Kamilov, I.;
- Stepurenko, A.;
- Gummetov, A.
Publication type:
Article
Features of the transformation of the exciton cathodoluminescence spectra of CdSe epitaxial layers with increasing excitation level.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 191, doi. 10.1134/S1063782614020237
By:
- Senokosov, E.;
- Chukita, V.;
- Odin, I.;
- Chukichev, M.
Publication type:
Article
Effect of ion doping on the dislocation-related photoluminescence in Si-implanted silicon.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 199, doi. 10.1134/S1063782614020183
By:
- Mikhaylov, A.;
- Belov, A.;
- Korolev, D.;
- Timofeeva, A.;
- Vasiliev, V.;
- Shushunov, A.;
- Bobrov, A.;
- Pavlov, D.;
- Tetelbaum, D.;
- Shek, E.
Publication type:
Article
Synthesis of thin p-type rutile films.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 251, doi. 10.1134/S1063782614020110
By:
- Ievlev, V.;
- Kushev, S.;
- Ovchinnikov, O.;
- Sumez, M.;
- Latyshev, A.;
- Bezryadin, M.;
- Leonova, L.;
- Kannykin, S.;
- Vozgorkov, A.;
- Smirnov, M.
Publication type:
Article
Raman scattering in PbTe and PbSnTe films: In situ phase transformations.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 173, doi. 10.1134/S1063782614020298
By:
- Volodin, V.;
- Sinyukov, M.;
- Shcheglov, D.;
- Latyshev, A.;
- Fedosenko, E.
Publication type:
Article
On the effect of electron-phonon interaction on the temperature dependences of magnetotransport in quantum hall systems.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 228, doi. 10.1134/S1063782614020092
By:
- Greshnov, A.;
- Beltukov, Y.
Publication type:
Article
Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 239, doi. 10.1134/S1063782614020249
By:
- Sydor, O.;
- Kovalyuk, Z.;
- Dubinko, V.
Publication type:
Article