Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 13
Results: 15
Metastable state of the CdTe-HgTe system.
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- Semiconductors, 2014, v. 48, n. 13, p. 1697, doi. 10.1134/S1063782614130144
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Specific features of the photoconductivity of semi-insulating cadmium telluride.
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- Semiconductors, 2014, v. 48, n. 13, p. 1700, doi. 10.1134/S1063782614130077
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Effect of bottom-electrode morphology on the dielectric characteristics of the metal-ferroelectric-metal planar structure.
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- Semiconductors, 2014, v. 48, n. 13, p. 1704, doi. 10.1134/S1063782614130120
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Simulation of the frequency dispersion of effective dielectric characteristics of composite materials.
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- Semiconductors, 2014, v. 48, n. 13, p. 1710, doi. 10.1134/S1063782614130156
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Numerical simulation of the effect of non-steady-state conditions on the formation of concentration growth striations when growing crystals by the Bridgman method.
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- Semiconductors, 2014, v. 48, n. 13, p. 1716, doi. 10.1134/S1063782614130089
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Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire.
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- Semiconductors, 2014, v. 48, n. 13, p. 1720, doi. 10.1134/S1063782614130168
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Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance.
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- Semiconductors, 2014, v. 48, n. 13, p. 1724, doi. 10.1134/S1063782614130119
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Study of the self-organization processes in lead sulfide quantum dots.
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- Semiconductors, 2014, v. 48, n. 13, p. 1729, doi. 10.1134/S1063782614130132
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Formation of an array of ordered nanocathodes based on carbon nanotubes by nanoimprint lithography and PECVD processes.
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- Semiconductors, 2014, v. 48, n. 13, p. 1732, doi. 10.1134/S1063782614130090
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Effect of an organic molecular coating on control over the conductance of carbon nanotube channel.
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- Semiconductors, 2014, v. 48, n. 13, p. 1735, doi. 10.1134/S106378261413003X
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Effect of the morphology of CNT arrays on the current density of field-emitter matrices.
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- Semiconductors, 2014, v. 48, n. 13, p. 1742, doi. 10.1134/S1063782614130053
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Tunneling through a GaN/AlN-based double-barrier resonant tunneling heterostructure.
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- Semiconductors, 2014, v. 48, n. 13, p. 1747, doi. 10.1134/S1063782614130041
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Influence of size effects on the radiation stability of nanocrystalline materials.
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- Semiconductors, 2014, v. 48, n. 13, p. 1751, doi. 10.1134/S1063782614130065
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Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods.
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- Semiconductors, 2014, v. 48, n. 13, p. 1757, doi. 10.1134/S1063782614130028
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New types of surface acoustoelectric waves and acoustic charge transport in GaAs crystals.
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- Semiconductors, 2014, v. 48, n. 13, p. 1689, doi. 10.1134/S1063782614130107
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