Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 12

Results: 23

Picosecond switching of high-voltage reverse-biased p- n- n structures to the conductive state by pulsed light.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1645, doi. 10.1134/S1063782614120124

By:

Kyuregyan, A.

Publication type:

Article

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4 H-SiC and SiO produced by thermal oxidation in dry oxygen.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1581, doi. 10.1134/S1063782614120148

By:

Mikhaylov, A.;
Afanasiev, A.;
Ilyin, V.;
Luchinin, V.;
Reshanov, S.;
Krieger, M.;
Schöner, A.;
Sledziewski, T.

Publication type:

Article

Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1613, doi. 10.1134/S1063782614120082

By:

Gonchar, K.;
Osminkina, L.;
Sivakov, V.;
Lysenko, V.;
Timoshenko, V.

Publication type:

Article

Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1619, doi. 10.1134/S1063782614120227

By:

Vinichenko, A.;
Gladkov, V.;
Kargin, N.;
Strikhanov, M.;
Vasil'evskii, I.

Publication type:

Article

Specific features of the nonradiative relaxation of Er ions in epitaxial Si structures.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1586, doi. 10.1134/S1063782614120112

By:

Kudryavtsev, K.;
Kryzhkov, D.;
Antonov, A.;
Shengurov, D.;
Shmagin, V.;
Krasilnik, Z.

Publication type:

Article

Electrical properties of diluted n- and p-SiGe at small x.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1552, doi. 10.1134/S1063782614120069

By:

Emtsev, V.;
Abrosimov, N.;
Kozlovskii, V.;
Oganesyan, G.

Publication type:

Article

Thermally stimulated 3-15 THz emission at plasmon-phonon frequencies in polar semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1557, doi. 10.1134/S106378261412015X

By:

Požela, J.;
Požela, K.;
Šilėnas, A.;
Širmulis, E.;
Kašalynas, I.;
Jucienė, V.;
Venckevičius, R.

Publication type:

Article

Optical properties of CdS-PbS films and the possibility of the photoeffect in the mid-infrared range.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1562, doi. 10.1134/S1063782614120197

By:

Rokakh, A.;
Bilenko, D.;
Shishkin, M.;
Skaptsov, A.;
Venig, S.;
Matasov, M.

Publication type:

Article

Nanostructured GeSbTe chalcogenide films produced by laser electrodispersion.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1567, doi. 10.1134/S1063782614120239

By:

Yavsin, D.;
Kozhevin, V.;
Gurevich, S.;
Yakovlev, S.;
Melekh, B.;
Yagovkina, M.;
Pevtsov, A.

Publication type:

Article

Doping and defect formation in thermoelectric ZnSb doped with copper.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1571, doi. 10.1134/S1063782614120161

By:

Prokofieva, L.;
Konstantinov, P.;
Shabaldin, A.;
Pshenai-Severin, D.;
Burkov, A.;
Fedorov, M.

Publication type:

Article

Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1592, doi. 10.1134/S1063782614120185

By:

Reshina, I.;
Ivanov, S.

Publication type:

Article

High-power LEDs based on InGaAsP/InP heterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1653, doi. 10.1134/S1063782614120173

By:

Rakovics, V.;
Imenkov, A.;
Sherstnev, V.;
Serebrennikova, O.;
Il'inskaya, N.;
Yakovlev, Yu.

Publication type:

Article

Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100).

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1605, doi. 10.1134/S1063782614120021

By:

Bagraev, N.;
Kuzmin, R.;
Gurin, A.;
Klyachkin, L.;
Malyarenko, A.;
Mashkov, V.

Publication type:

Article

Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1600, doi. 10.1134/S1063782614120057

By:

Egorov, A.;
Brunkov, P.;
Nikitina, E.;
Pirogov, E.;
Sobolev, M.;
Lazarenko, A.;
Baidakova, M.;
Kirilenko, D.;
Konnikov, S.

Publication type:

Article

Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1657, doi. 10.1134/S1063782614120033

By:

Bobrov, M.;
Blokhin, S.;
Kuzmenkov, A.;
Maleev, N.;
Blokhin, A.;
Zadiranov, Yu.;
Nikitina, E.;
Ustinov, V.

Publication type:

Article

Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe base layers.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1631, doi. 10.1134/S1063782614120094

By:

Khrypunov, G.;
Sokol, E.;
Yakimenko, Yu.;
Meriuts, A.;
Ivashuk, A.;
Shelest, T.

Publication type:

Article

Lasing in microdisks of ultrasmall diameter.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1626, doi. 10.1134/S1063782614120240

By:

Zhukov, A.;
Kryzhanovskaya, N.;
Maximov, M.;
Lipovskii, A.;
Savelyev, A.;
Bogdanov, A.;
Shostak, I.;
Moiseev, E.;
Karpov, D.;
Laukkanen, J.;
Tommila, J.

Publication type:

Article

Improvement of the efficiency of silicon solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1664, doi. 10.1134/S1063782614120070

By:

Fuks, B.

Publication type:

Article

Conductance matrix of multiterminal semiconductor devices with edge channels.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1636, doi. 10.1134/S1063782614120045

By:

Danilovskii, E.;
Bagraev, N.

Publication type:

Article

Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1674, doi. 10.1134/S1063782614120136

By:

Markov, L.;
Smirnova, I.;
Pavluchenko, A.;
Kukushkin, M.;
Zakheim, D.;
Pavlov, S.

Publication type:

Article

Effect of annealing on the kinetic properties and band parameters of HgCdEuSe semiconductor crystals.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1680, doi. 10.1134/S1063782614120100

By:

Kovalyuk, T.;
Maistruk, E.;
Maryanchuk, P.

Publication type:

Article

On the sol-gel synthesis of strontium-titanate thin films and the prospects of their use in electronics.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1685, doi. 10.1134/S1063782614120215

By:

Sohrabi Anaraki, H.;
Gaponenko, N.;
Rudenko, M.;
Guk, A.;
Zavadskij, S.;
Golosov, D.;
Kolosnitsyn, B.;
Kolos, V.;
Pyatlitskij, A.;
Turtsevich, A.

Publication type:

Article

Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1545, doi. 10.1134/S1063782614120203

By:

Romaka, V.;
Rogl, P.;
Stadnyk, Yu.;
Korzh, R.;
Krayovskyy, V.;
Horyn, A.

Publication type:

Article