Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 11

Results: 27

Methods for estimating the compensating-impurity concentration in Hg-doped Ge.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1408, doi. 10.1134/S1063782614110062
By:
- Bannaya, V.
Publication type:
Article
A DFT study of BeX ( X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1411, doi. 10.1134/S1063782614110244
By:
- Rai, D.;
- Ghimire, M.;
- Thapa, R.
Publication type:
Article
Hysteretic phenomena in a 2DEG in the quantum Hall effect regime, studied in a transport experiment.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1423, doi. 10.1134/S1063782614110074
By:
- Budantsev, M.;
- Pokhabov, D.;
- Pogosov, A.;
- Zhdanov, E.;
- Bakarov, A.;
- Toropov, A.
Publication type:
Article
Hall effect in CdTe crystals doped with Sn from the vapor phase.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1432, doi. 10.1134/S1063782614110153
By:
- Makhniy, V.;
- German, I.;
- Parfenyuk, O.
Publication type:
Article
Physical properties of FeGaSe under an applied alternating current.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1434, doi. 10.1134/S1063782614110219
By:
- Niftiev, N.;
- Tagiev, O.;
- Muradov, M.;
- Mamedov, F.
Publication type:
Article
Vacancy-donor pairs and their formation in irradiated n-Si.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1438, doi. 10.1134/S1063782614110098
By:
- Emtsev, V.;
- Abrosimov, N.;
- Kozlovskii, V.;
- Oganesyan, G.
Publication type:
Article
Study of the vibrational states of CdTe and CdHgTe lattices under conditions of the adsorption of ammonia and carbon dioxide.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1444, doi. 10.1134/S1063782614110104
By:
- Fedyaeva, O.
Publication type:
Article
Electron diffraction study of the phase formation of Tl-Fe-Se and kinetics of phase transformations of films TlFeSe.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1449, doi. 10.1134/S1063782614110037
By:
- Asgerov, E.;
- Madadzada, A.;
- Ismayilov, D.;
- Mehdiyeva, R.
Publication type:
Article
Multilayer quantum-dot arrays of high bulk density.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1452, doi. 10.1134/S1063782614110190
By:
- Nadtochiy, A.;
- Payusov, A.;
- Maximov, M.;
- Zhukov, A.;
- Simchuk, O.
Publication type:
Article
Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1456, doi. 10.1134/S1063782614110141
By:
- Makarenko, L.;
- Korshunov, F.;
- Lastovskii, S.;
- Murin, L.;
- Moll, M.;
- Pintilie, I.
Publication type:
Article
Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1463, doi. 10.1134/S1063782614110165
By:
- Maremyanin, K.;
- Kryzhkov, D.;
- Morozov, S.;
- Sergeev, S.;
- Kuritsyn, D.;
- Gaponova, D.;
- Aleshkin, V.;
- Sadof'ev, Yu.
Publication type:
Article
Electrically-detected electron paramagnetic resonance of point centers in 6 H-SiC nanostructures.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1467, doi. 10.1134/S1063782614110049
By:
- Bagraev, N.;
- Gets, D.;
- Kalabukhova, E.;
- Klyachkin, L.;
- Malyarenko, A.;
- Mashkov, V.;
- Savchenko, D.;
- Shanina, B.
Publication type:
Article
Sensitization of the photoelectric effect in carbazole- and indolocarbazole-containing poly(phenylquinoline)s by benzothiadiazole acceptor molecules.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1481, doi. 10.1134/S1063782614110025
By:
- Aleksandrova, E.;
- Svetlichnyi, V.;
- Matyushina, N.;
- Myagkova, L.;
- Kudryavtsev, V.;
- Tameev, A.
Publication type:
Article
Functionalization of nc-Si/SiO semiconductor quantum dots by oligonucleotides.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1485, doi. 10.1134/S1063782614110050
By:
- Bayramov, F.;
- Poloskin, E.;
- Kornev, A.;
- Chernev, A.;
- Toporov, V.;
- Dubina, M.;
- Röder, C.;
- Sprung, C.;
- Lipsanen, H.;
- Bairamov, B.
Publication type:
Article
On the applicability boundaries of the restoration method for the temporal shape of modulated optical signals with a frequency higher than the boundary frequency of a photoresistor.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1490, doi. 10.1134/S1063782614110220
By:
- Nikishin, E.
Publication type:
Article
Features of the current-voltage characteristics in thin conductive layers of organic light-emitting diodes.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1494, doi. 10.1134/S1063782614110232
By:
- Nikitenko, V.;
- Sannikova, N.;
- Strikhanov, M.
Publication type:
Article
Gas-sensitive layers based on fractal-percolation structures.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1499, doi. 10.1134/S1063782614110177
By:
- Moshnikov, V.;
- Nalimova, S.;
- Seleznev, B.
Publication type:
Article
Specific features of the recombination loss of the photocurrent in n-TiN/ p-Si anisotype heterojunctions.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1504, doi. 10.1134/S106378261411027X
By:
- Solovan, M.;
- Brus, V.;
- Maryanchuk, P.
Publication type:
Article
Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1507, doi. 10.1134/S1063782614110128
By:
- Grudinkin, S.;
- Feoktistov, N.;
- Medvedev, A.;
- Dukin, A.;
- Golubev, V.
Publication type:
Article
Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1512, doi. 10.1134/S1063782614110086
By:
- Danilovskii, E.;
- Bagraev, N.;
- Chernev, A.;
- Getz, D.;
- Klyachkin, L.;
- Malyarenko, A.
Publication type:
Article
Spectral features of the photoresponse of structures with silicon nanoparticles.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1518, doi. 10.1134/S106378261411013X
By:
- Ken, O.;
- Andronikov, D.;
- Yavsin, D.;
- Kukin, A.;
- Danilov, S.;
- Smirnov, A.;
- Sreseli, O.;
- Gurevich, S.
Publication type:
Article
Phase formation upon the interaction of thin films in the system YbSmTe-AsTe.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1525, doi. 10.1134/S1063782614110116
By:
- Hajiyev, E.
Publication type:
Article
Structure and optical properties of thin AlO films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1527, doi. 10.1134/S1063782614110256
By:
- Seredin, P.;
- Goloschapov, D.;
- Lukin, A.;
- Len'shin, A.;
- Bondarev, A.;
- Arsent'ev, I.;
- Vavilova, L.;
- Tarasov, I.
Publication type:
Article
Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1532, doi. 10.1134/S1063782614110281
By:
- Wolfson, A.
Publication type:
Article
Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1535, doi. 10.1134/S1063782614110189
By:
- Mynbaeva, M.;
- Golovatenko, A.;
- Pechnikov, A.;
- Lavrent'ev, A.;
- Mynbaev, K.;
- Nikolaev, V.
Publication type:
Article
Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1539, doi. 10.1134/S1063782614110207
By:
- Nevedomskiy, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskiy, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Microdeformations of the crystal lattice of PbTeBr solid solutions.
Published in:
Semiconductors, 2014, v. 48, n. 11, p. 1405, doi. 10.1134/S1063782614110268
By:
- Sharov, M.;
- Kabanova, K.
Publication type:
Article