Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 11

Results: 27

Methods for estimating the compensating-impurity concentration in Hg-doped Ge.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1408, doi. 10.1134/S1063782614110062

By:

Bannaya, V.

Publication type:

Article

A DFT study of BeX ( X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1411, doi. 10.1134/S1063782614110244

By:

Rai, D.;
Ghimire, M.;
Thapa, R.

Publication type:

Article

Hysteretic phenomena in a 2DEG in the quantum Hall effect regime, studied in a transport experiment.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1423, doi. 10.1134/S1063782614110074

By:

Budantsev, M.;
Pokhabov, D.;
Pogosov, A.;
Zhdanov, E.;
Bakarov, A.;
Toropov, A.

Publication type:

Article

Hall effect in CdTe crystals doped with Sn from the vapor phase.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1432, doi. 10.1134/S1063782614110153

By:

Makhniy, V.;
German, I.;
Parfenyuk, O.

Publication type:

Article

Vacancy-donor pairs and their formation in irradiated n-Si.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1438, doi. 10.1134/S1063782614110098

By:

Emtsev, V.;
Abrosimov, N.;
Kozlovskii, V.;
Oganesyan, G.

Publication type:

Article

Physical properties of FeGaSe under an applied alternating current.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1434, doi. 10.1134/S1063782614110219

By:

Niftiev, N.;
Tagiev, O.;
Muradov, M.;
Mamedov, F.

Publication type:

Article

Study of the vibrational states of CdTe and CdHgTe lattices under conditions of the adsorption of ammonia and carbon dioxide.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1444, doi. 10.1134/S1063782614110104

By:

Fedyaeva, O.

Publication type:

Article

Electron diffraction study of the phase formation of Tl-Fe-Se and kinetics of phase transformations of films TlFeSe.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1449, doi. 10.1134/S1063782614110037

By:

Asgerov, E.;
Madadzada, A.;
Ismayilov, D.;
Mehdiyeva, R.

Publication type:

Article

Multilayer quantum-dot arrays of high bulk density.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1452, doi. 10.1134/S1063782614110190

By:

Nadtochiy, A.;
Payusov, A.;
Maximov, M.;
Zhukov, A.;
Simchuk, O.

Publication type:

Article

Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1456, doi. 10.1134/S1063782614110141

By:

Makarenko, L.;
Korshunov, F.;
Lastovskii, S.;
Murin, L.;
Moll, M.;
Pintilie, I.

Publication type:

Article

Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1463, doi. 10.1134/S1063782614110165

By:

Maremyanin, K.;
Kryzhkov, D.;
Morozov, S.;
Sergeev, S.;
Kuritsyn, D.;
Gaponova, D.;
Aleshkin, V.;
Sadof'ev, Yu.

Publication type:

Article

Electrically-detected electron paramagnetic resonance of point centers in 6 H-SiC nanostructures.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1467, doi. 10.1134/S1063782614110049

By:

Bagraev, N.;
Gets, D.;
Kalabukhova, E.;
Klyachkin, L.;
Malyarenko, A.;
Mashkov, V.;
Savchenko, D.;
Shanina, B.

Publication type:

Article

Sensitization of the photoelectric effect in carbazole- and indolocarbazole-containing poly(phenylquinoline)s by benzothiadiazole acceptor molecules.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1481, doi. 10.1134/S1063782614110025

By:

Aleksandrova, E.;
Svetlichnyi, V.;
Matyushina, N.;
Myagkova, L.;
Kudryavtsev, V.;
Tameev, A.

Publication type:

Article

Functionalization of nc-Si/SiO semiconductor quantum dots by oligonucleotides.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1485, doi. 10.1134/S1063782614110050

By:

Bayramov, F.;
Poloskin, E.;
Kornev, A.;
Chernev, A.;
Toporov, V.;
Dubina, M.;
Röder, C.;
Sprung, C.;
Lipsanen, H.;
Bairamov, B.

Publication type:

Article

On the applicability boundaries of the restoration method for the temporal shape of modulated optical signals with a frequency higher than the boundary frequency of a photoresistor.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1490, doi. 10.1134/S1063782614110220

By:

Nikishin, E.

Publication type:

Article

Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1507, doi. 10.1134/S1063782614110128

By:

Grudinkin, S.;
Feoktistov, N.;
Medvedev, A.;
Dukin, A.;
Golubev, V.

Publication type:

Article

Features of the current-voltage characteristics in thin conductive layers of organic light-emitting diodes.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1494, doi. 10.1134/S1063782614110232

By:

Nikitenko, V.;
Sannikova, N.;
Strikhanov, M.

Publication type:

Article

Gas-sensitive layers based on fractal-percolation structures.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1499, doi. 10.1134/S1063782614110177

By:

Moshnikov, V.;
Nalimova, S.;
Seleznev, B.

Publication type:

Article

Specific features of the recombination loss of the photocurrent in n-TiN/ p-Si anisotype heterojunctions.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1504, doi. 10.1134/S106378261411027X

By:

Solovan, M.;
Brus, V.;
Maryanchuk, P.

Publication type:

Article

Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1512, doi. 10.1134/S1063782614110086

By:

Danilovskii, E.;
Bagraev, N.;
Chernev, A.;
Getz, D.;
Klyachkin, L.;
Malyarenko, A.

Publication type:

Article

Phase formation upon the interaction of thin films in the system YbSmTe-AsTe.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1525, doi. 10.1134/S1063782614110116

By:

Hajiyev, E.

Publication type:

Article

Structure and optical properties of thin AlO films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1527, doi. 10.1134/S1063782614110256

By:

Seredin, P.;
Goloschapov, D.;
Lukin, A.;
Len'shin, A.;
Bondarev, A.;
Arsent'ev, I.;
Vavilova, L.;
Tarasov, I.

Publication type:

Article

Spectral features of the photoresponse of structures with silicon nanoparticles.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1518, doi. 10.1134/S106378261411013X

By:

Ken, O.;
Andronikov, D.;
Yavsin, D.;
Kukin, A.;
Danilov, S.;
Smirnov, A.;
Sreseli, O.;
Gurevich, S.

Publication type:

Article

Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1532, doi. 10.1134/S1063782614110281

By:

Wolfson, A.

Publication type:

Article

Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1535, doi. 10.1134/S1063782614110189

By:

Mynbaeva, M.;
Golovatenko, A.;
Pechnikov, A.;
Lavrent'ev, A.;
Mynbaev, K.;
Nikolaev, V.

Publication type:

Article

Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1539, doi. 10.1134/S1063782614110207

By:

Nevedomskiy, V.;
Bert, N.;
Chaldyshev, V.;
Preobrazhenskiy, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Microdeformations of the crystal lattice of PbTeBr solid solutions.

Published in:

Semiconductors, 2014, v. 48, n. 11, p. 1405, doi. 10.1134/S1063782614110268

By:

Sharov, M.;
Kabanova, K.

Publication type:

Article