Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 1

Results: 24

Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 34, doi. 10.1134/S1063782614010163

By:

Klimko, G.;
Sorokin, S.;
Sedova, I.;
Gronin, S.;
Liaci, F.;
Kaibyshev, V.;
Sevryuk, V.;
Brunkov, P.;
Sitnikova, A.;
Toropov, A.;
Ivanov, S.

Publication type:

Article

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 53, doi. 10.1134/S1063782614010199

By:

Lundin, W.;
Nikolaev, A.;
Sakharov, A.;
Usov, S.;
Zavarin, E.;
Brunkov, P.;
Yagovkina, M.;
Cherkashin, N.;
Tsatsulnikov, A.

Publication type:

Article

Single-frequency tunable semiconductor lasers.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 120, doi. 10.1134/S1063782614010096

By:

Duraev, V.;
Medvedev, S.

Publication type:

Article

High-power pulse-emitting lasers in the 1.5-1.6 μm spectral region.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 95, doi. 10.1134/S106378261401014X

By:

Gorlachuk, P.;
Ryaboshtan, Yu.;
Marmalyuk, A.;
Kurnosov, V.;
Kurnosov, K.;
Zhuravleva, O.;
Romantsevich, V.;
Chernov, R.;
Ivanov, A.;
Simakov, V.

Publication type:

Article

Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO/ZrO system containing Si nanoclusters.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 42, doi. 10.1134/S1063782614010114

By:

Ershov, A.;
Pavlov, D.;
Grachev, D.;
Bobrov, A.;
Karabanova, I.;
Chugrov, I.;
Tetelbaum, D.

Publication type:

Article

Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 30, doi. 10.1134/S1063782614010126

By:

Evropeytsev, E.;
Klimko, G.;
Komissarova, T.;
Sedova, I.;
Sorokin, S.;
Gronin, S.;
Kazantsev, D.;
Ber, B.;
Ivanov, S.;
Toropov, A.

Publication type:

Article

Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 46, doi. 10.1134/S1063782614010084

By:

Davydov, S.

Publication type:

Article

Optical-fiber-tip temperature control system for fiber-coupled laser modules in medical equipment.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 129, doi. 10.1134/S1063782614010047

By:

Aleksandrov, S.;
Gavrilov, G.;
Sotnikova, G.;
Ter-Martirosyan, A.

Publication type:

Article

Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 58, doi. 10.1134/S1063782614010230

By:

Smirnova, I.;
Markov, L.;
Pavlyuchenko, A.;
Kukushkin, M.;
Pavlov, S.

Publication type:

Article

Application of diode lasers in light-oxygen cancer therapy.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 123, doi. 10.1134/S1063782614010254

By:

Zakharov, S.;
Korochkin, I.;
Yusupov, A.;
Bezotosnyi, V.;
Cheshev, E.;
Frantzen, F.

Publication type:

Article

Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 83, doi. 10.1134/S1063782614010023

By:

Afonenko, A.;
Ushakov, D.

Publication type:

Article

Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 115, doi. 10.1134/S1063782614010205

By:

Marmalyuk, A.;
Andreev, A.;
Konyaev, V.;
Ladugin, M.;
Lebedeva, E.;
Meshkov, A.;
Morozyuk, A.;
Sapozhnikov, S.;
Danilov, A.;
Simakov, V.;
Telegin, K.;
Yarotskaya, I.

Publication type:

Article

Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 89, doi. 10.1134/S1063782614010035

By:

Afonenko, A.;
Aleshkin, V.;
Dubinov, A.

Publication type:

Article

Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 99, doi. 10.1134/S1063782614010175

By:

Konyaev, V.;
Marmalyuk, A.;
Ladugin, M.;
Bagaev, T.;
Zverkov, M.;
Krichevsky, V.;
Padalitsa, A.;
Sapozhnikov, S.;
Simakov, V.

Publication type:

Article

Limiting parameters of high-power single-stripe laser diodes in the range of 800-808 nm in the pulsed mode.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 109, doi. 10.1134/S1063782614010060

By:

Bezotosnyi, V.;
Bondarev, V.;
Krokhin, O.;
Oleshenko, V.;
Pevtsov, V.;
Popov, Yu.;
Cheshev, E.

Publication type:

Article

Structure and optical properties of heterostructures based on MOCVD (AlGaAsP)Si alloys.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 21, doi. 10.1134/S1063782614010217

By:

Seredin, Alloys;
Glotov, A.;
Lenshin, A.;
Arsentyev, I.;
Vinokurov, D.;
Prutskij, Tatiana;
Leiste, Harald;
Rinke, Monica

Publication type:

Article

Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138

By:

Galiev, G.;
Pushkarev, S.;
Vasil'evskii, I.;
Klimov, E.;
Klochkov, A.;
Maltsev, P.

Publication type:

Article

Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 104, doi. 10.1134/S1063782614010059

By:

Bezotosnyi, V.;
Oleshenko, V.;
Cheshev, E.

Publication type:

Article

Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO thin-film matrices.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 73, doi. 10.1134/S1063782614010242

By:

Voitovych, V.;
Rudenko, R.;
Kolosiuk, A.;
Krasko, M.;
Juhimchuk, V.;
Voitovych, M.;
Ponomarov, S.;
Kraitchinskii, A.;
Povarchuk, V.;
Makara, V.

Publication type:

Article

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 77, doi. 10.1134/S1063782614010072

By:

Blokhin, S.;
Karachinsky, L.;
Novikov, I.;
Payusov, A.;
Nadtochiy, A.;
Bobrov, M.;
Kuzmenkov, A.;
Maleev, N.;
Ledentsov, N.;
Ustinov, V.;
Bimberg, D.

Publication type:

Article

On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 9, doi. 10.1134/S1063782614010151

By:

Kavetskyy, T.;
Tsmots, V.;
Šauša, O.;
Stepanov, A.

Publication type:

Article

Nonlinear ionization of a two-dimensional nanostructure.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 13, doi. 10.1134/S1063782614010102

By:

Eminov, P.;
Sokolov, V.;
Gordeeva, S.

Publication type:

Article

MHEMT with a power-gain cut-off frequency of f = 0.63 THz on the basis of a InAlAs/InGaAs/InAlAs/GaAs nanoheterostructure.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 69, doi. 10.1134/S1063782614010187

By:

Lavrukhin, D.;
Yachmenev, A.;
Galiev, R.;
Khabibullin, R.;
Ponomarev, D.;
Fedorov, Yu.;
Maltsev, P.

Publication type:

Article

Pyroelectric properties of the wide-gap CdSe semiconductor in the low-temperature region.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 1, doi. 10.1134/S1063782614010229

By:

Shaldin, Yu.;
Matyiasik, S.;
Davydov, A.;
Zhavoronkov, N.

Publication type:

Article