Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 1

Results: 24

Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 34, doi. 10.1134/S1063782614010163
By:
- Klimko, G.;
- Sorokin, S.;
- Sedova, I.;
- Gronin, S.;
- Liaci, F.;
- Kaibyshev, V.;
- Sevryuk, V.;
- Brunkov, P.;
- Sitnikova, A.;
- Toropov, A.;
- Ivanov, S.
Publication type:
Article
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 53, doi. 10.1134/S1063782614010199
By:
- Lundin, W.;
- Nikolaev, A.;
- Sakharov, A.;
- Usov, S.;
- Zavarin, E.;
- Brunkov, P.;
- Yagovkina, M.;
- Cherkashin, N.;
- Tsatsulnikov, A.
Publication type:
Article
Single-frequency tunable semiconductor lasers.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 120, doi. 10.1134/S1063782614010096
By:
- Duraev, V.;
- Medvedev, S.
Publication type:
Article
High-power pulse-emitting lasers in the 1.5-1.6 μm spectral region.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 95, doi. 10.1134/S106378261401014X
By:
- Gorlachuk, P.;
- Ryaboshtan, Yu.;
- Marmalyuk, A.;
- Kurnosov, V.;
- Kurnosov, K.;
- Zhuravleva, O.;
- Romantsevich, V.;
- Chernov, R.;
- Ivanov, A.;
- Simakov, V.
Publication type:
Article
Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO/ZrO system containing Si nanoclusters.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 42, doi. 10.1134/S1063782614010114
By:
- Ershov, A.;
- Pavlov, D.;
- Grachev, D.;
- Bobrov, A.;
- Karabanova, I.;
- Chugrov, I.;
- Tetelbaum, D.
Publication type:
Article
Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 30, doi. 10.1134/S1063782614010126
By:
- Evropeytsev, E.;
- Klimko, G.;
- Komissarova, T.;
- Sedova, I.;
- Sorokin, S.;
- Gronin, S.;
- Kazantsev, D.;
- Ber, B.;
- Ivanov, S.;
- Toropov, A.
Publication type:
Article
Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 46, doi. 10.1134/S1063782614010084
By:
- Davydov, S.
Publication type:
Article
Optical-fiber-tip temperature control system for fiber-coupled laser modules in medical equipment.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 129, doi. 10.1134/S1063782614010047
By:
- Aleksandrov, S.;
- Gavrilov, G.;
- Sotnikova, G.;
- Ter-Martirosyan, A.
Publication type:
Article
Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 58, doi. 10.1134/S1063782614010230
By:
- Smirnova, I.;
- Markov, L.;
- Pavlyuchenko, A.;
- Kukushkin, M.;
- Pavlov, S.
Publication type:
Article
Application of diode lasers in light-oxygen cancer therapy.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 123, doi. 10.1134/S1063782614010254
By:
- Zakharov, S.;
- Korochkin, I.;
- Yusupov, A.;
- Bezotosnyi, V.;
- Cheshev, E.;
- Frantzen, F.
Publication type:
Article
Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 83, doi. 10.1134/S1063782614010023
By:
- Afonenko, A.;
- Ushakov, D.
Publication type:
Article
Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 115, doi. 10.1134/S1063782614010205
By:
- Marmalyuk, A.;
- Andreev, A.;
- Konyaev, V.;
- Ladugin, M.;
- Lebedeva, E.;
- Meshkov, A.;
- Morozyuk, A.;
- Sapozhnikov, S.;
- Danilov, A.;
- Simakov, V.;
- Telegin, K.;
- Yarotskaya, I.
Publication type:
Article
Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 89, doi. 10.1134/S1063782614010035
By:
- Afonenko, A.;
- Aleshkin, V.;
- Dubinov, A.
Publication type:
Article
Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 99, doi. 10.1134/S1063782614010175
By:
- Konyaev, V.;
- Marmalyuk, A.;
- Ladugin, M.;
- Bagaev, T.;
- Zverkov, M.;
- Krichevsky, V.;
- Padalitsa, A.;
- Sapozhnikov, S.;
- Simakov, V.
Publication type:
Article
Limiting parameters of high-power single-stripe laser diodes in the range of 800-808 nm in the pulsed mode.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 109, doi. 10.1134/S1063782614010060
By:
- Bezotosnyi, V.;
- Bondarev, V.;
- Krokhin, O.;
- Oleshenko, V.;
- Pevtsov, V.;
- Popov, Yu.;
- Cheshev, E.
Publication type:
Article
Structure and optical properties of heterostructures based on MOCVD (AlGaAsP)Si alloys.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 21, doi. 10.1134/S1063782614010217
By:
- Seredin, Alloys;
- Glotov, A.;
- Lenshin, A.;
- Arsentyev, I.;
- Vinokurov, D.;
- Prutskij, Tatiana;
- Leiste, Harald;
- Rinke, Monica
Publication type:
Article
Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Maltsev, P.
Publication type:
Article
Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 104, doi. 10.1134/S1063782614010059
By:
- Bezotosnyi, V.;
- Oleshenko, V.;
- Cheshev, E.
Publication type:
Article
Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO thin-film matrices.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 73, doi. 10.1134/S1063782614010242
By:
- Voitovych, V.;
- Rudenko, R.;
- Kolosiuk, A.;
- Krasko, M.;
- Juhimchuk, V.;
- Voitovych, M.;
- Ponomarov, S.;
- Kraitchinskii, A.;
- Povarchuk, V.;
- Makara, V.
Publication type:
Article
Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 77, doi. 10.1134/S1063782614010072
By:
- Blokhin, S.;
- Karachinsky, L.;
- Novikov, I.;
- Payusov, A.;
- Nadtochiy, A.;
- Bobrov, M.;
- Kuzmenkov, A.;
- Maleev, N.;
- Ledentsov, N.;
- Ustinov, V.;
- Bimberg, D.
Publication type:
Article
On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 9, doi. 10.1134/S1063782614010151
By:
- Kavetskyy, T.;
- Tsmots, V.;
- Šauša, O.;
- Stepanov, A.
Publication type:
Article
Nonlinear ionization of a two-dimensional nanostructure.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 13, doi. 10.1134/S1063782614010102
By:
- Eminov, P.;
- Sokolov, V.;
- Gordeeva, S.
Publication type:
Article
MHEMT with a power-gain cut-off frequency of f = 0.63 THz on the basis of a InAlAs/InGaAs/InAlAs/GaAs nanoheterostructure.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 69, doi. 10.1134/S1063782614010187
By:
- Lavrukhin, D.;
- Yachmenev, A.;
- Galiev, R.;
- Khabibullin, R.;
- Ponomarev, D.;
- Fedorov, Yu.;
- Maltsev, P.
Publication type:
Article
Pyroelectric properties of the wide-gap CdSe semiconductor in the low-temperature region.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 1, doi. 10.1134/S1063782614010229
By:
- Shaldin, Yu.;
- Matyiasik, S.;
- Davydov, A.;
- Zhavoronkov, N.
Publication type:
Article