Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 7

Results: 23

Theory of steady-state plane tunneling-assisted impact ionization waves.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 978, doi. 10.1134/S1063782613070142

By:

Kyuregyan, A.

Publication type:

Article

Electrical and photoelectric properties of n-CdO- p-InSe anisotype heterojunctions.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 943, doi. 10.1134/S1063782613070099

By:

Katerynchuk, V.;
Kudrynskyi, Z.;
Khomyak, V.;
Orletsky, I.;
Netyaga, V.

Publication type:

Article

Persistent photoconductivity and electron mobility in InAlAs/InGaAs/InAlAs/InP quantum-well structures.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 935, doi. 10.1134/S1063782613070130

By:

Kulbachinskii, V.;
Lunin, R.;
Yuzeeva, N.;
Vasilievskii, I.;
Galiev, G.;
Klimov, E.

Publication type:

Article

New acceptor centers of the background impurities in p-CdZnTe.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 899, doi. 10.1134/S1063782613070191

By:

Plyatsko, S.;
Rashkovetskyi, L.

Publication type:

Article

Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 916, doi. 10.1134/S1063782613070129

By:

Kosyachenko, L.;
Yurtsenyuk, N.;
Rarenko, I.;
Sklyarchuk, V.;
Sklyarchuk, O.;
Zakharuk, Z.;
Grushko, E.

Publication type:

Article

Terahertz electroluminescence of fibonacci superlattices.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 947, doi. 10.1134/S1063782613070178

By:

Malyshev, K.

Publication type:

Article

Absorption and photoionization of the donor level in CdF semiconductor crystals.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 911, doi. 10.1134/S1063782613070105

By:

Kazanskii, S.;
Shcheulin, A.;
Angervaks, A.;
Ryskin, A.

Publication type:

Article

Formation of structures with noncatalytic CdTe nanowires.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 875, doi. 10.1134/S1063782613070221

By:

Soshnikov, I.;
Petrov, V.;
Proskuryakov, Y.;
Kudryashov, D.;
Nashchekin, A.;
Cirlin, G.;
Treharne, R.;
Durose, K.

Publication type:

Article

Statistical analysis of AFM topographic images of self-assembled quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 930, doi. 10.1134/S106378261307021X

By:

Sevriuk, V.;
Brunkov, P.;
Shalnev, I.;
Gutkin, A.;
Klimko, G.;
Gronin, S.;
Sorokin, S.;
Konnikov, S.

Publication type:

Article

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 997, doi. 10.1134/S1063782613070075

By:

Galiev, G.;
Pushkarev, S.;
Vasil'evskii, I.;
Klimov, E.;
Imamov, R.

Publication type:

Article

Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 908, doi. 10.1134/S1063782613070051

By:

Babaev, A.;
Kudoyarova, V.

Publication type:

Article

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 884, doi. 10.1134/S1063782613070063

By:

Filippov, V.;
Bormontov, E.

Publication type:

Article

Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 892, doi. 10.1134/S1063782613070208

By:

Romaka, V.;
Rogl, P.;
Stadnyk, Yu.;
Hlil, E.;
Krajovskii, V.;
Horyn, A.

Publication type:

Article

Theory of transport phenomena in polycrystalline lead chalcogenide films. Mobility. Nondegenerate statistics.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 879, doi. 10.1134/S106378261307004X

By:

Atakulov, Sh.;
Zaynolobidinova, S.;
Nabiev, G.;
Nabiyev, M.;
Yuldashev, A.

Publication type:

Article

Adsorption on tunable bilayer graphene: A model approach.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 962, doi. 10.1134/S1063782613070026

By:

Alisultanov, Z.

Publication type:

Article

Properties of SbS and SbSe thin films obtained by pulsed laser ablation.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 1003, doi. 10.1134/S1063782613070233

By:

Virt, I.;
Rudyj, I.;
Kurilo, I.;
Lopatynskyi, I.;
Linnik, L.;
Tetyorkin, V.;
Potera, P.;
Luka, G.

Publication type:

Article

Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 993, doi. 10.1134/S1063782613070166

By:

Maleev, N.;
Kuz'menkov, A.;
Kulagina, M.;
Zadiranov, Yu.;
Vasil'ev, A.;
Blokhin, S.;
Shulenkov, A.;
Troshkov, S.;
Gladyshev, A.;
Nadtochiy, A.;
Pavlov, M.;
Bobrov, M.;
Nazaruk, D.;
Ustinov, V.

Publication type:

Article

Effect of ultrasonic loading on current in Mo/ n- n-Si with Schottky barriers.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 987, doi. 10.1134/S106378261307018X

By:

Olikh, O.

Publication type:

Article

Topological size effect in tin-dioxide cluster films produced by reactive sputtering.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 925, doi. 10.1134/S1063782613070154

By:

Maksimenko, L.;
Matyash, I.;
Mishchuk, O.;
Rudenko, S.;
Serdega, B.

Publication type:

Article

Electronic properties of the interface between hexadecafluoro copper phthalocyanine and unsubstituted copper phthalocyanine films.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 956, doi. 10.1134/S1063782613070117

By:

Komolov, A.;
Lazneva, E.;
Pshenichnyuk, S.;
Gavrikov, A.;
Chepilko, N.;
Tomilov, A.;
Gerasimova, N.;
Lezov, A.;
Repin, P.

Publication type:

Article

Effect of surface passivation by SiN/SiO of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 1008, doi. 10.1134/S1063782613070087

By:

Gassoumi, Malek;
Mosbahi, Hana;
Zaidi, Mohamed;
Gaquiere, Christophe;
Maaref, Hassen

Publication type:

Article

Ultralow-frequency photoelectric response of amorphous AsSe layers.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 952, doi. 10.1134/S1063782613070038

By:

Anisimova, N.;
Bordovsky, V.;
Grabko, G.;
Castro, R.

Publication type:

Article

Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 971, doi. 10.1134/S1063782613070245

By:

Vitukhnovskii, A.;
Vashchenko, A.;
Lebedev, V.;
Vasiliev, R.;
Brunkov, P.;
Bychkovskii, D.

Publication type:

Article