Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 5

Results: 24

Domain-size evolution upon switching of the states of a one-dimensional system with defects.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 628, doi. 10.1134/S1063782613050187

By:

Petukhov, B.

Publication type:

Article

Electrophysical properties of mesoporous silicon passivated by iron.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 657, doi. 10.1134/S1063782613050084

By:

Bilenko, D.;
Galushka, V.;
Zharkova, E.;
Mysenko, I.;
Terin, D.;
Khasina, E.

Publication type:

Article

Magnetic properties of (FeInS)(InS) alloy single crystals.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 596, doi. 10.1134/S1063782613050096

By:

Bodnar, I.;
Novikova, M.;
Trukhanov, S.

Publication type:

Article

Conductivity of nanocrystalline ZnO(Ga).

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 650, doi. 10.1134/S1063782613050242

By:

Vorobyeva, N.;
Rumyantseva, M.;
Forsh, P.;
Gaskov, A.

Publication type:

Article

Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 721, doi. 10.1134/S106378261305014X

By:

Lvova, T.;
Dunaevskii, M.;
Lebedev, M.;
Shakhmin, A.;
Sedova, I.;
Ivanov, S.

Publication type:

Article

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 606, doi. 10.1134/S1063782613050229

By:

Tyschenko, I.;
Volodin, V.;
Voelskow, M.;
Cherkov, A.;
Popov, V.

Publication type:

Article

Effect of surface scattering of carriers in the photoconductivity spectra of CdS.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 619, doi. 10.1134/S1063782613050059

By:

Batyrev, A.;
Bisengaliev, R.;
Novikov, B.

Publication type:

Article

Generation of powerful microwave voltage oscillations in a diffused silicon diode.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 670, doi. 10.1134/S1063782613050151

By:

Lyubutin, S.;
Rukin, S.;
Slovikovsky, B.;
Tsyranov, S.

Publication type:

Article

Tunneling current of the contact between impurity-containing graphene nanoribbons.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 662, doi. 10.1134/S1063782613050060

By:

Belonenko, M.;
Pak, A.;
Lebedev, N.

Publication type:

Article

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 686, doi. 10.1134/S1063782613050230

By:

Vexler, M.;
Tyaginov, S.;
Illarionov, Yu.;
Sing, Yew;
Shenp, Ang;
Fedorov, V.;
Isakov, D.

Publication type:

Article

Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 701, doi. 10.1134/S1063782613050114

By:

Imenkov, A.;
Grebenshchikova, E.;
Starostenko, D.;
Sherstnev, V.;
Konovalov, G.;
Andreev, I.;
Yakovlev, Yu.

Publication type:

Article

Study of the light-induced degradation of tandem α-Si:H/μ c-Si:H photovoltaic converters.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 679, doi. 10.1134/S1063782613050102

By:

Emelyanov, V.;
Abramov, A.;
Bobyl, A.;
Gudovskikh, A.;
Orekhov, D.;
Terukov, E.;
Timoshina, N.;
Chosta, O.;
Shvarts, M.

Publication type:

Article

Gallium-oxide films obtained by thermal evaporation.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 612, doi. 10.1134/S1063782613050126

By:

Kalygina, V.;
Zarubin, A.;
Novikov, V.;
Petrova, Yu.;
Tolbanov, O.;
Tyazhev, A.;
Tsupiy, S.;
Yaskevich, T.

Publication type:

Article

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 636, doi. 10.1134/S1063782613050047

By:

Aleshkin, V.;
Dubinov, A.;
Drozdov, M.;
Zvonkov, B.;
Kudryavtsev, K.;
Tonkikh, A.;
Yablonskiy, A.;
Werner, P.

Publication type:

Article

Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 647, doi. 10.1134/S1063782613050217

By:

Tselikov, G.;
Timoshenko, V.;
Plenge, J.;
Rühl, E.;
Shatalova, A.;
Shandryuk, G.;
Merekalov, A.;
Tal'roze, R.

Publication type:

Article

Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 713, doi. 10.1134/S1063782613050138

By:

Korsunska, N.;
Bacherikov, Yu.;
Stara, T.;
Kladko, V.;
Baran, N.;
Polishchuk, Yu.;
Kuchuk, A.;
Zhuk, A.;
Venger, Ye.

Publication type:

Article

Dark-current relaxation in MnGaSe single crystals.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 593, doi. 10.1134/S1063782613050205

By:

Tagiev, O.;
Asadullayeva, S.;
Bachtiyarly, I.;
Tagiev, K.

Publication type:

Article

Effect of a weak magnetic field on the micromechanical and electrical properties of silicon for use in solar power engineering.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 665, doi. 10.1134/S1063782613050163

By:

Makara, V.;
Korotchenkov, O.;
Steblenko, L.;
Podolian, A.;
Kalinichenko, D.

Publication type:

Article

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 695, doi. 10.1134/S1063782613050175

By:

Nadtochiy, A.;
Hofmann, W.;
Germann, T.;
Blokhin, S.;
Karachinskiy, L.;
Maximov, M.;
Shchukin, V.;
Zhukov, A.;
Bimberg, D.

Publication type:

Article

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 641, doi. 10.1134/S1063782613050072

By:

Berdnikov, A.;
Gusev, V.;
Mironenko, A.;
Popov, A.;
Perminov, A.;
Rudy, A.;
Chernomordick, V.

Publication type:

Article

Ionic conductivity and dielectric relaxation in γ-irradiated TlGaTe crystals.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 707, doi. 10.1134/S1063782613050199

By:

Sardarli, R.;
Samedov, O.;
Abdullayev, A.;
Huseynov, E.;
Salmanov, F.;
Alieva, N.;
Agaeva, R.

Publication type:

Article

The mechanism of charge transfer in Bi(TeSe) solid solution thin films.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 602, doi. 10.1134/S1063782613050023

By:

Abdullaev, N.;
Aliguliyeva, H.;
Kerimova, A.;
Mustafayeva, K.;
Mamedova, I.;
Mamedov, N.;
Nemov, S.;
Bulanchuk, P.

Publication type:

Article

Model of the formation of a polycrystalline n-ZnO/ p-CuO heterojunction.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 655, doi. 10.1134/S1063782613050035

By:

Adilov, Sh.;
Kumekov, M.;
Kumekov, S.;
Terukov, E.

Publication type:

Article

Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 623, doi. 10.1134/S106378261302005X

By:

Bairamov, F.;
Toporov, V.;
Poloskin, E.;
Bairamov, H.;
Röder, C.;
Sprung, C.;
Bohmhammel, K.;
Seidel, J.;
Irmer, G.;
Lashkul, A.;
Lähderanta, E.;
Song, Y.

Publication type:

Article