Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 4

Results: 20

Influence of irradiation with γ-ray photons on the photoluminescence of CdZnTe crystals preliminarily subjected to the intense radiation of a neodymium laser.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 457, doi. 10.1134/S1063782613040088
By:
- Glinchuk, K.;
- Medvid', A.;
- Mychko, A.;
- Naseka, Yu.;
- Prokhorovich, A.;
- Strilchuk, O.
Publication type:
Article
Study of photomodulated reflectance in 6 H-SiC single crystals.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 464, doi. 10.1134/S1063782613040118
By:
- Gruzintsev, A.
Publication type:
Article
Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 481, doi. 10.1134/S1063782613040064
By:
- Ershov, A.;
- Chugrov, I.;
- Tetelbaum, D.;
- Mashin, A.;
- Pavlov, D.;
- Nezhdanov, A.;
- Bobrov, A.;
- Grachev, D.
Publication type:
Article
Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 532, doi. 10.1134/S1063782613040076
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Zhigalina, O.;
- Klimov, E.;
- Zhigalina, V.;
- Imamov, R.
Publication type:
Article
On the electrically detected cyclotron resonance of holes in silicon nanostructures.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 525, doi. 10.1134/S1063782613040039
By:
- Bagraev, N.;
- Gets, D.;
- Danilovsky, E.;
- Klyachkin, L.;
- Malyarenko, A.
Publication type:
Article
Resonance Coulomb scattering at shallow donors in AlGaAs/ n-GaAs/AlGaAs quantum wells.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 487, doi. 10.1134/S1063782613040027
By:
- Aleshkin, V.;
- Burdeiny, D.
Publication type:
Article
Synthesis and characterization of nanostructured zinc oxide layers for sensor applications.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 586, doi. 10.1134/S1063782613040155
By:
- Krasteva, L.;
- Dimitrov, D.;
- Papazova, K.;
- Nikolaev, N.;
- Peshkova, T.;
- Moshnikov, V.;
- Gracheva, I.;
- Karpova, S.;
- Kaneva, N.
Publication type:
Article
Structural and optical properties of thin InO films produced by autowave oxidation.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 569, doi. 10.1134/S1063782613040210
By:
- Tambasov, I.;
- Myagkov, V.;
- Ivanenko, A.;
- Nemtsev, I.;
- Bykova, L.;
- Bondarenko, G.;
- Mihlin, J.;
- Maksimov, I.;
- Ivanov, V.;
- Balashov, S.;
- Karpenko, D.
Publication type:
Article
Application of the transverse acoustoelectric effect to studying silicon surface charging upon water adsorption.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 579, doi. 10.1134/S106378261304009X
By:
- Gromashevskii, V.;
- Tatyanenko, N.;
- Snopok, B.
Publication type:
Article
Study of the characteristics of photoresistors based on hydrochemically deposited films of PbSnSe solid solution.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 574, doi. 10.1134/S1063782613040179
By:
- Mukhamedzyanov, H.;
- Markov, V.;
- Maskaeva, L.
Publication type:
Article
Voltage dependence of the differential capacitance of a p- n junction.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 543, doi. 10.1134/S1063782613040209
By:
- Shekhovtsov, N.
Publication type:
Article
Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 501, doi. 10.1134/S1063782613040167
By:
- Mezdrogina, M.;
- Kozhanova, Yu.
Publication type:
Article
Electrical properties of semiconductor quantum dots.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 494, doi. 10.1134/S1063782613040131
By:
- Kharlamov, V.;
- Korostelev, D.;
- Bogoraz, I.;
- Milovidova, O.;
- Sergeyev, V.
Publication type:
Article
Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 455, doi. 10.1134/S1063782613040180
By:
- Petrov, P.;
- Ivánov, Yu.
Publication type:
Article
Study of the morphology and optical properties of anodic oxide layers on InAs (111)III.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 555, doi. 10.1134/S1063782613040222
By:
- Valisheva, N.;
- Kruchinin, V.;
- Tereshchenko, O.;
- Kozhukhov, A.;
- Levtsova, T.;
- Rykhlitskiy, S.;
- Sheglov, D.
Publication type:
Article
Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 538, doi. 10.1134/S1063782613040106
By:
- Gruzintsev, A.;
- Redkin, A.;
- Opoku, C.;
- Shkunov, M.
Publication type:
Article
Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 514, doi. 10.1134/S1063782613040052
By:
- Beznogov, M.;
- Suris, R.
Publication type:
Article
Specific features of the field generation of minority charge carriers in Si-SiO structures.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 511, doi. 10.1134/S1063782613040040
By:
- Baraban, A.;
- Konorov, P.;
- Dmitriev, V.;
- Prokof'ev, V.
Publication type:
Article
On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 561, doi. 10.1134/S1063782613040143
By:
- Kolosov, S.;
- Krivobok, V.;
- Klevkov, Yu.;
- Adiyatullin, A.
Publication type:
Article
Relaxation-induced self-organization of a silicon crystal surface under microwave plasma micromachining.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 469, doi. 10.1134/S1063782613040192
By:
- Shanygin, V.;
- Yafarov, R.
Publication type:
Article