Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 13
Results: 14
Measurement of the mobility and concentration of charge carriers in a Gunn gallium-arsenide diode using a near-field microwave microscope.
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- Semiconductors, 2013, v. 47, n. 13, p. 1715, doi. 10.1134/S1063782613130149
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Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling.
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- Semiconductors, 2013, v. 47, n. 13, p. 1680, doi. 10.1134/S1063782613130101
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Diagnostics of γ-irradiated Si-SiO structures by the cathodoluminescence method.
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- Semiconductors, 2013, v. 47, n. 13, p. 1711, doi. 10.1134/S1063782613130022
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Procedure for calculating the field-emission current from a single carbon nanotube.
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- Semiconductors, 2013, v. 47, n. 13, p. 1692, doi. 10.1134/S1063782613130058
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Effect of the formation conditions on the properties of ZnO:Ga thin films deposited by magnetron-assisted sputtering onto a cold substrate.
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- Semiconductors, 2013, v. 47, n. 13, p. 1687, doi. 10.1134/S1063782613130083
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Growth of nanocrystalline silicon from a matrix of amorphous silicon monoxide.
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- Semiconductors, 2013, v. 47, n. 13, p. 1684, doi. 10.1134/S1063782613130071
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On the atomic-force microscopy of biological nanoparticles in air.
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- Semiconductors, 2013, v. 47, n. 13, p. 1699, doi. 10.1134/S1063782613130046
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Controlling the temporal instability of the dielectric parameters of ferroelectrics.
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- Semiconductors, 2013, v. 47, n. 13, p. 1720, doi. 10.1134/S1063782613130137
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Three types of self-activated luminescence centers in CdS:O.
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- Semiconductors, 2013, v. 47, n. 13, p. 1661, doi. 10.1134/S1063782613130125
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Formation of nickel clusters for the growth of carbon nanotubes.
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- Semiconductors, 2013, v. 47, n. 13, p. 1697, doi. 10.1134/S106378261313006X
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Features of the interaction of ring chiral media with electromagnetic radiation of the centimeter and decimeter ranges.
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- Semiconductors, 2013, v. 47, n. 13, p. 1674, doi. 10.1134/S1063782613130150
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Effect of the activity of fluorine-containing electrolytes on reaching the maximum thickness of porous anodic titanium oxide.
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- Semiconductors, 2013, v. 47, n. 13, p. 1707, doi. 10.1134/S1063782613130034
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Specific features of the structure and properties of carbon nanocolumns formed by low-temperature chemical vapor deposition.
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- Semiconductors, 2013, v. 47, n. 13, p. 1703, doi. 10.1134/S1063782613130095
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- Article
Effective conductivity of a polycrystalline medium with weak macroscopic anisotropy.
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- Semiconductors, 2013, v. 47, n. 13, p. 1667, doi. 10.1134/S1063782613130113
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- Article