Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 12
Results: 22
Laterally localizing potential as a tool for controlling the electron spin relaxation time in GaAs quantum wells.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1598, doi. 10.1134/S1063782613120142
- By:
- Publication type:
- Article
Simulation of the absorption of a femtosecond laser pulse in crystalline silicon.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1616, doi. 10.1134/S1063782613120075
- By:
- Publication type:
- Article
Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1545, doi. 10.1134/S1063782613120099
- By:
- Publication type:
- Article
Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1610, doi. 10.1134/S1063782613140017
- By:
- Publication type:
- Article
Growth model of silicon nanoislands on sapphire.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1595, doi. 10.1134/S1063782613120117
- By:
- Publication type:
- Article
Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1556, doi. 10.1134/S1063782613120221
- By:
- Publication type:
- Article
Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1626, doi. 10.1134/S1063782613120178
- By:
- Publication type:
- Article
Lateral photoconductivity in structures with Ge/Si quantum dots.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1574, doi. 10.1134/S1063782613120154
- By:
- Publication type:
- Article
Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1583, doi. 10.1134/S106378261312021X
- By:
- Publication type:
- Article
Photo- and electroluminescence from semiconductor colloidal quantum dots in organic matrices: QD-OLED.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1567, doi. 10.1134/S1063782613120208
- By:
- Publication type:
- Article
Fabrication and study of <i>p-n</i> structures with crystalline inclusions in the space-charge region.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1652, doi. 10.1134/S1063782613120105
- By:
- Publication type:
- Article
Anisotropy of the solid-state epitaxy of silicon carbide in silicon.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1551, doi. 10.1134/S1063782613120129
- By:
- Publication type:
- Article
Dynamic characteristics of double-barrier nanostructures with asymmetric barriers of finite height and widths in a strong ac electric field.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1641, doi. 10.1134/S1063782613120051
- By:
- Publication type:
- Article
Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1562, doi. 10.1134/S1063782613120063
- By:
- Publication type:
- Article
Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1604, doi. 10.1134/S1063782613120026
- By:
- Publication type:
- Article
Spectral dependence of the linewidth enhancement factor in quantum dot lasers.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1656, doi. 10.1134/S1063782613120233
- By:
- Publication type:
- Article
Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1591, doi. 10.1134/S1063782613120166
- By:
- Publication type:
- Article
Structural studies of a ferromagnetic GaMnSb layer.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1587, doi. 10.1134/S1063782613120038
- By:
- Publication type:
- Article
Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1578, doi. 10.1134/S1063782613120130
- By:
- Publication type:
- Article
Study of the photocatalytic and sensor properties of ZnO/SiO<sub>2</sub> nanocomposite layers.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1636, doi. 10.1134/S106378261312004X
- By:
- Publication type:
- Article
Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1621, doi. 10.1134/S106378261312018X
- By:
- Publication type:
- Article
Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges.
- Published in:
- Semiconductors, 2013, v. 47, n. 12, p. 1570, doi. 10.1134/S1063782613120191
- By:
- Publication type:
- Article